يعرض 1 - 8 نتائج من 8 نتيجة بحث عن '"McMahon, Joshua M."', وقت الاستعلام: 0.37s تنقيح النتائج
  1. 1
    Report
    Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

    المؤلفون: Tanner, Daniel S. P., McMahon, Joshua M., Schulz, Stefan

    المصدر: Phys. Rev. Applied 10, 034027 (2018)

    مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics

    URL الوصول: http://arxiv.org/abs/1807.05392

    View record in Arxiv

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  2. 2
    Academic Journal
    Carrier density dependent Auger recombination in c-plane (In,Ga)N/GaN quantum wells: insights from atomistic calculations

    المؤلفون: McMahon, Joshua M, Kioupakis, Emmanouil, Schulz, Stefan

    المساهمون: Science Foundation Ireland, Sustainable Energy Authority of Ireland, University of Michigan

    المصدر: Journal of Physics D: Applied Physics ; volume 57, issue 12, page 125102 ; ISSN 0022-3727 1361-6463

    الاتاحة: http://dx.doi.org/10.1088/1361-6463/ad1146
    https://iopscience.iop.org/article/10.1088/1361-6463/ad1146
    https://iopscience.iop.org/article/10.1088/1361-6463/ad1146/pdf

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  3. 3
    Academic Journal
    Theoretical study of the temperature dependence of Auger–Meitner recombination in (Al,Ga)N quantum wells.

    المؤلفون: McMahon, Joshua M, Finn, Robert, Schulz, Stefan

    المصدر: Journal of Physics: Condensed Matter; 3/3/2025, Vol. 37 Issue 9, p1-15, 15p


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  4. 4
    Academic Journal
    Carrier density dependent Auger recombination in c -plane (In,Ga)N/GaN quantum wells: insights from atomistic calculations.

    المؤلفون: McMahon, Joshua M, Kioupakis, Emmanouil, Schulz, Stefan

    المصدر: Journal of Physics D: Applied Physics; 3/22/2024, Vol. 57 Issue 12, p1-11, 11p

    مصطلحات موضوعية: ELECTRON-hole recombination, QUANTUM wells, CARRIER density, LIGHT emitting diodes, LOW temperatures, HIGH temperatures


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  5. 5
    Academic Journal
    Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells

    المؤلفون: McMahon, Joshua M., Tanner, Daniel S. P., Kioupakis, Emmanouil, Schulz, Stefan

    المساهمون: Science Foundation Ireland, The University of Michigan Blue Sky Research Programme

    المصدر: Applied Physics Letters ; volume 116, issue 18 ; ISSN 0003-6951 1077-3118

    الاتاحة: http://dx.doi.org/10.1063/5.0006128
    https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0006128/8744461/181104_1_online.pdf

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  6. 6
    Academic Journal
    Erratum: Atomistic analysis of Auger recombination in c -plane ( In , Ga ) N / GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination [Phys. Rev. B 105 , 195307 (2022)]

    المؤلفون: McMahon, Joshua M., Kioupakis, Emmanouil, Schulz, Stefan

    المصدر: Physical Review B ; volume 108, issue 3 ; ISSN 2469-9950 2469-9969

    الاتاحة: http://dx.doi.org/10.1103/physrevb.108.039901
    https://link.aps.org/article/10.1103/PhysRevB.108.039901
    http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.108.039901/fulltext

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  7. 7
    Academic Journal
    Atomistic analysis of Auger recombination in c-plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination

    المؤلفون: McMahon, Joshua M., Kioupakis, Emmanouil, Schulz, Stefan

    مصطلحات موضوعية: Atomistic theoretical study, Temperature dependence, Competition, Auger recombination, C-plane (In,Ga)N/GaN quantum wells, Radiative, Indium (In), Thermal droop, Nonradiative

    وصف الملف: application/pdf

    Relation: 195307; McMahon, J. M., Kioupakis, E. and Schulz, S. (2022) 'Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination', Physical Review B, 105, 195307 (14pp). doi:10.1103/PhysRevB.105.195307; 14; Physical Review B; http://hdl.handle.net/10468/13187; 105

    الاتاحة: http://hdl.handle.net/10468/13187
    https://doi.org/10.1103/PhysRevB.105.195307

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  8. 8
    Interface roughness, carrier localization, and wave function overlap in c-Plane (In,Ga)N/GaN quantum wells: interplay of well width, alloy microstructure, structural inhomogeneities, and Coulomb effects

    المؤلفون: Tanner, Daniel S. P., McMahon, Joshua M., Schulz, Stefan

    مصطلحات موضوعية: Carrier-localization effects, Coulomb effects, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, c-plane (In,Ga)N/GaN quantum wells, Reduced quantum-well-barrier-interface roughness

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______1535::aa22d5d73a0242d02a446371395cd732
    https://hdl.handle.net/10468/7550

    View record in OpenAIRE

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