يعرض 1 - 20 نتائج من 184 نتيجة بحث عن '"Matsuzaki, Hideaki"', وقت الاستعلام: 0.61s تنقيح النتائج
  1. 1
    Academic Journal
    Frailty and occupational falls among older Japanese workers: An Internet-based cross-sectional study

    المؤلفون: Matsugaki, Ryutaro, Matsuzaki, Hideaki, Saeki, Satoru, Fujino, Yoshihisa, Matsuda, Shinya

    المساهمون: Japan Small- and Medium-Sized Enterprise Welfare Foundation

    المصدر: Journal of Occupational Health ; volume 65, issue 1 ; ISSN 1341-9145 1348-9585

    الاتاحة: http://dx.doi.org/10.1002/1348-9585.12424
    https://academic.oup.com/joh/article-pdf/65/1/e12424/58563590/joh212424.pdf

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  2. 2
    Academic Journal
    Predictive ability of the total score of the Kihon checklist for the incidence of functional disability in older Japanese adults: An 8‐year prospective study

    المؤلفون: Matsuzaki, Hideaki, Kishimoto, Hiro, Nofuji, Yu, Chen, Tao, Narazaki, Kenji

    المساهمون: Japan Society for the Promotion of Science

    المصدر: Geriatrics & Gerontology International ; volume 22, issue 9, page 723-729 ; ISSN 1444-1586 1447-0594

    الاتاحة: http://dx.doi.org/10.1111/ggi.14435
    https://onlinelibrary.wiley.com/doi/pdf/10.1111/ggi.14435
    https://onlinelibrary.wiley.com/doi/full-xml/10.1111/ggi.14435

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  3. 3
    Academic Journal
    51-nm Uniform-Intensity Tuning of Superstructure Grating Active-DBR Laser for 2-μm Wavelength Band

    المؤلفون: Shindo, Takahiko, Ueda, Yuta, Shimokozono, Makoto, Sato, Tomonari, Kobayashi, Wataru, Kanazawa, Shigeru, Chen, Mingchen, Matsuzaki, Hideaki

    المصدر: IEEE Photonics Journal ; volume 14, issue 3, page 1-8 ; ISSN 1943-0655 1943-0647

    الاتاحة: http://dx.doi.org/10.1109/jphot.2022.3172695
    http://xplorestaging.ieee.org/ielx7/4563994/9758988/09771312.pdf?arnumber=9771312

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  4. 4
    Academic Journal
    Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in AlxGa1−xN/GaN High Electron Mobility Transistors.

    المؤلفون: Amir, Walid, Shin, Ju-Won, Chakraborty, Surajit, Shin, Ki-Yong, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae-Woo

    المصدر: Physica Status Solidi. A: Applications & Materials Science; Jul2024, Vol. 221 Issue 13, p1-6, 6p

    مصطلحات موضوعية: MODULATION-doped field-effect transistors


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  5. 5
    Academic Journal
    Reliability Instability Assessment with Interfacial Trapping Analysis for the Optimization of Al Composition in Al x Ga 1−x N/GaN High Electron Mobility Transistors

    المؤلفون: Amir, Walid, Shin, Ju-Won, Chakraborty, Surajit, Shin, Ki-Yong, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae-Woo

    المصدر: physica status solidi (a) ; volume 221, issue 13 ; ISSN 1862-6300 1862-6319

    الاتاحة: http://dx.doi.org/10.1002/pssa.202300597
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202300597

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  6. 6
    Academic Journal
    A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

    المؤلفون: Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Kim, Jae-Moo, Cho, Chu-Young, Park, Kyung-Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae-Woo

    المصدر: Scientific Reports ; volume 11, issue 1 ; ISSN 2045-2322

    الاتاحة: http://dx.doi.org/10.1038/s41598-021-01768-4
    https://www.nature.com/articles/s41598-021-01768-4.pdf
    https://www.nature.com/articles/s41598-021-01768-4

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  7. 7
    Academic Journal
    Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

    المؤلفون: Amir, Walid, Shin, Ju‑Won, Shin, Ki‑Yong, Kim, Jae‑Moo, Cho, Chu‑Young, Park, Kyung‑Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae‑Woo

    المصدر: Scientific Reports ; volume 11, issue 1 ; ISSN 2045-2322

    الاتاحة: https://doi.org/10.1038/s41598-021-02854-3
    https://www.nature.com/articles/s41598-021-02854-3.pdf
    https://www.nature.com/articles/s41598-021-02854-3

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  8. 8
    Academic Journal
    300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

    المؤلفون: Hamada, Hiroshi, Tsutsumi, Takuya, Matsuzaki, Hideaki, Fujimura, Takuya, Abdo, Ibrahim, Shirane, Atsushi, Okada, Kenichi, Itami, Go, Song, Ho-Jin, Sugiyama, Hiroki, Nosaka, Hideyuki

    المساهمون: Ministry of Internal Affairs and Communications, Japan, through the Research and Development Program for Expansion of Radio Resources

    المصدر: IEEE Journal of Solid-State Circuits ; volume 55, issue 9, page 2316-2335 ; ISSN 0018-9200 1558-173X

    الاتاحة: https://doi.org/10.1109/jssc.2020.3005818
    http://xplorestaging.ieee.org/ielx7/4/9177374/09139194.pdf?arnumber=9139194

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  9. 9
    Academic Journal
    L g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f T and f max in excess of 700 GHz

    المؤلفون: Jo, Hyeon-Bhin, Yun, Do-Young, Baek, Ji-Min, Lee, Jung-Hee, Kim, Tae-Woo, Kim, Dae-Hyun, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki

    المساهمون: BK21 Plus project through the Ministry of Education, Korea

    المصدر: Applied Physics Express ; volume 12, issue 5, page 054006 ; ISSN 1882-0778 1882-0786

    الاتاحة: http://dx.doi.org/10.7567/1882-0786/ab1943
    http://iopscience.iop.org/article/10.7567/1882-0786/ab1943
    http://iopscience.iop.org/article/10.7567/1882-0786/ab1943/pdf
    https://iopscience.iop.org/article/10.7567/1882-0786/ab1943/pdf
    https://iopscience.iop.org/article/10.7567/1882-0786/ab1943

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  10. 10
    Academic Journal
    Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

    المؤلفون: Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Chakraborty, Surajit, Cho, Chu-Young, Kim, Jae-Moo, Lee, Sang-Tae, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Dae-Hyun, Kim, Tae-Woo

    المساهمون: National Research Foundation of Korea (NRF) funded by the Ministry of Science and Information and Communications Technology, Technology Innovation Program, Ministry of Trade, Industry & Energy

    المصدر: IEEE Transactions on Electron Devices ; volume 70, issue 6, page 2988-2993 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2023.3268626
    http://xplorestaging.ieee.org/ielx7/16/10136238/10113852.pdf?arnumber=10113852

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  11. 11
    Academic Journal
    Sub-50 nm Terahertz In 0.8 Ga 0.2 As Quantum-Well High-Electron-Mobility Transistors for 6G Applications

    المؤلفون: Park, Wan-Soo, Jo, Hyeon-Bhin, Kim, Hyo-Jin, Choi, Su-Min, Yoo, Ji-Hoon, Jeong, Hyeon-Seok, George, Sethu, Baek, Ji-Min, Lee, In-Geun, Kim, Tae-Woo, Kim, Sang-Kuk, Yun, Jacob, Kim, Ted, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun

    المساهمون: Samsung Research Funding and Incubation Center of Samsung Electronics, National Research and Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT

    المصدر: IEEE Transactions on Electron Devices ; volume 70, issue 4, page 2081-2089 ; ISSN 0018-9383 1557-9646

    الاتاحة: http://dx.doi.org/10.1109/ted.2022.3231576
    http://xplorestaging.ieee.org/ielx7/16/10081247/10014673.pdf?arnumber=10014673

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  12. 12
    Conference
    On the universality of drain-induced-barrier-lowering in field-effect transistors

    المؤلفون: Choi, Su-Min, Jo, Hyeon-Bhin, Yun, Do-Young, Kim, Jun-Gyu, Park, Wan-Soo, Baek, Ji-Min, Lee, In-Geun, Shin, Jang-Kyoo, Kwon, Hyuk-Min, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun

    المساهمون: Samsung

    المصدر: 2022 International Electron Devices Meeting (IEDM)

    الاتاحة: http://dx.doi.org/10.1109/iedm45625.2022.10019358
    http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019358.pdf?arnumber=10019358

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  13. 13
    Academic Journal
    Author's reply to comments on “Predictive ability of the total score of the Kihon checklist for the incidence of functional disability in older Japanese adults: An 8‐year prospective study”

    المؤلفون: Matsuzaki, Hideaki, Kishimoto, Hiro, Nofuji, Yu, Chen, Tao, Narazaki, Kenji

    المصدر: Geriatrics & Gerontology International ; volume 22, issue 11, page 985-986 ; ISSN 1444-1586 1447-0594

    الاتاحة: http://dx.doi.org/10.1111/ggi.14493
    https://onlinelibrary.wiley.com/doi/pdf/10.1111/ggi.14493
    https://onlinelibrary.wiley.com/doi/full-xml/10.1111/ggi.14493

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  14. 14
    Academic Journal
    Burst-Tolerant Tuning of Reflection-Type Transversal Filter Laser With Single Active Region

    المؤلفون: Saito, Yusuke, Ueda, Yuta, Shindo, Takahiko, Kanazawa, Shigeru, Matsuzaki, Hideaki, Ishikawa, Mitsuteru

    المصدر: IEEE Photonics Technology Letters ; volume 34, issue 1, page 23-26 ; ISSN 1041-1135 1941-0174

    الاتاحة: http://dx.doi.org/10.1109/lpt.2021.3133010
    http://xplorestaging.ieee.org/ielx7/68/9660208/09638469.pdf?arnumber=9638469

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  15. 15
    Academic Journal
    Extraction of effective mobility of In Ga As/In Al As quantum well high-electron-mobility transistors on InP substrate

    المؤلفون: Park, Wan-Soo, Kim, Jun-Gyu, Yun, Seung-Won, Jeong, Hyeon-Seok, Jo, Hyeon-Bhin, Kim, Tae-Woo, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Dae-Hyun

    المساهمون: National Research Foundation of Korea, Ministry of Science, ICT and Future Planning

    المصدر: Solid-State Electronics ; volume 197, page 108446 ; ISSN 0038-1101

    الاتاحة: http://dx.doi.org/10.1016/j.sse.2022.108446
    https://api.elsevier.com/content/article/PII:S0038110122002179?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S0038110122002179?httpAccept=text/plain

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  16. 16
    Academic Journal
    Al0.05Ga0.95Nバックバリアを有する高抵抗Si基板上GaNチャネルHEMT / GaN-channel HEMT with Al0.05Ga0.95N back barrier on high-resistivity Si substrate

    المؤلفون: Matsuzaki Hideaki, Nakajima Fumito, Sugiyama Hiroki, Takuya Hoshi, 中島 史人, 星 拓也, 杉山 弘樹, 松崎 秀昭

    المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :2903

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  17. 17
    Academic Journal
    Corrigendum to “MOCVD-grown compressively strained C-doped In Ga1−As1−Sb with high-In/Sb content for very low turn-on-voltage InP-based DHBTs” [J. Cryst. Growth 404 (2014) 172–176]

    المؤلفون: Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki, Gotoh, Hideki

    المصدر: Journal of Crystal Growth ; volume 424, page 80 ; ISSN 0022-0248

    الاتاحة: https://doi.org/10.1016/j.jcrysgro.2015.05.001
    https://api.elsevier.com/content/article/PII:S0022024815003395?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S0022024815003395?httpAccept=text/plain

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  18. 18
    Academic Journal
    Changes of Oral and Physical Functions in Older Japanese Who Participated in Keyboard Harmonica and Exercise Classes during COVID-19-Related Movement Restrictions.

    المؤلفون: Mizutani, Shinsuke, Matsuzaki, Hideaki, Iyota, Kiyomi, Tani, Asuka, Oku, Saori, Tabuchi, Hiroaki, Fujiwara, Akiko, Hase-Tamaru, Shizuka, Kishimoto, Hiro, Narazaki, Kenji

    المصدر: International Journal of Environmental Research & Public Health; Feb2023, Vol. 20 Issue 4, p3700, 11p

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  19. 19
    Academic Journal
    Analytical and Physical Investigation on Source Resistance in In x Ga 1−x As Quantum-Well High-Electron-Mobility Transistors.

    المؤلفون: Yoo, Ji-Hoon, Lee, In-Geun, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Dae-Hyun

    المصدر: Micromachines; Feb2023, Vol. 14 Issue 2, p439, 8p

    مصطلحات موضوعية: OHMIC contacts, QUADRATIC differentials, MODULATION-doped field-effect transistors, QUADRATIC equations, DIFFERENTIAL equations, TRANSISTORS, TUNNEL design & construction

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  20. 20
    Academic Journal
    Impact of Output Conductance on Current-Gain Cut-Off Frequency in In x Ga 1-x As/In 0.52 Al 0.48 As Quantum-Well High-Electron-Mobility Transistors on InP Substrate.

    المؤلفون: Kim, Hyo-Jin, Lee, In-Geun, Jo, Hyeon-Bhin, Rho, Tae-Beom, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Lee, Jae-Hak, Kim, Tae-Woo, Kim, Dae-Hyun

    المصدر: Electronics (2079-9292); Jan2023, Vol. 12 Issue 2, p259, 9p

    مصطلحات موضوعية: QUANTUM wells, MODULATION-doped field-effect transistors, INDIUM gallium nitride

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