نتائج البحث - "Martino, Joao A"

Relation: Journal of integrated circuits and systems. Porto Alegre, RS. Vol. 15, no. 2 (2020), p. 1-5; http://hdl.handle.net/10183/254845; 001121482

الاتاحة: http://hdl.handle.net/10183/254845

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8

Conference

Influence of channel silicon thickness and biological material permittivity on nTFET biosensor

المؤلفون: MacAmbira, Christian N., Agopian, Paula G. D., Martino, Joao A.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Biosensor, Permittivity, Sensitivity, Silicon Thickness, TFET, Underlap

Relation: 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018; http://dx.doi.org/10.1109/SBMicro.2018.8511580; 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.; http://hdl.handle.net/11449/187115; 2-s2.0-85057397873; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/187115
https://doi.org/10.1109/SBMicro.2018.8511580

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9

Book

TFETs for Analog Applications

المؤلفون: Martino, Marcio Dalla Valle, Agopian, Paula Ghedini Der, Martino, Joao Antonio, Simoen, Eddy, Claeys, Cor

المصدر: Nanoscale Devices ; page 127-158 ; ISBN 9781315163116

الاتاحة: http://dx.doi.org/10.1201/9781315163116-7

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10

Academic Journal

Parameter extraction using the transfer characteristics of vertically stacked Si nanosheet MOSFETs.

المؤلفون: Ortiz-Conde, Adelmo, Silva, Vanessa C. P., Veloso, Anabela, Agopian, Paula G. D., Simoen, Eddy, Martino, Joao A., García-Sánchez, Francisco J.

المصدر: Journal of Integrated Circuits & Systems; 2024, Vol. 19 Issue 1, p1-8, 8p

11

Academic Journal

Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies

المؤلفون: Tolêdo, Rodrigo do Nascimento, Martino, Joao Antonio, Der Agopian, Paula Ghedini

المساهمون: CAPES

المصدر: Semiconductor Science and Technology ; volume 38, issue 9, page 095013 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/1361-6641/aceb84
https://iopscience.iop.org/article/10.1088/1361-6641/aceb84
https://iopscience.iop.org/article/10.1088/1361-6641/aceb84/pdf

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12

Academic Journal

MISHEMT intrinsic voltage gain under multiple channel output characteristics

المؤلفون: Canales, Bruno Godoy, Perina, Welder Fernandes, Martino, Joao Antonio, Simoen, Eddy, Peralagu, Uthayasankaran, Collaert, Nadine, Der Agopian, Paula Ghedini

المساهمون: Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico

المصدر: Semiconductor Science and Technology ; volume 38, issue 11, page 115004 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/1361-6641/acfa1f
https://iopscience.iop.org/article/10.1088/1361-6641/acfa1f
https://iopscience.iop.org/article/10.1088/1361-6641/acfa1f/pdf

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13

Academic Journal

Experimental study of MISHEMT from 450 K down to 200 K for analog applications

المؤلفون: Perina, Welder F., Martino, Joao A., Simoen, Eddy, Peralagu, Uthayasankaran, Collaert, Nadine, Agopian, Paula G.D.

المساهمون: Conselho Nacional de Desenvolvimento Científico e Tecnológico, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

المصدر: Solid-State Electronics ; volume 208, page 108742 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2023.108742
https://api.elsevier.com/content/article/PII:S0038110123001557?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110123001557?httpAccept=text/plain

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14

Academic Journal

Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis

المؤلفون: de Lima Silva, Wenita, do Nascimento Tolêdo, Rodrigo, Gonçalez Filho, Walter, de Moraes Nogueira, Alexandro, Ghedini Der Agopian, Paula, Antonio Martino, Joao

المساهمون: Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico

المصدر: Solid-State Electronics ; volume 202, page 108611 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2023.108611
https://api.elsevier.com/content/article/PII:S0038110123000242?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110123000242?httpAccept=text/plain

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15

Conference

Enhanced model for ZTC in irradiated and strained pFinFET

المؤلفون: Nascimento, Vinicius M., Agopian, Paula G.D., Simoen, Eddy, Claeys, Cor, Martino, Joao A.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: pFinFET, radiation, SOI, strain, Zero Temperature Coefficient

Relation: SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum; http://dx.doi.org/10.1109/SBMicro.2017.8113016; SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.; http://hdl.handle.net/11449/170548; 2-s2.0-85040535451; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/170548
https://doi.org/10.1109/SBMicro.2017.8113016

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16

Conference

The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

المؤلفون: Teixeira, Fernando F., Agopian, Paula G. D., Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Martino, Joao A.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: back leakage current, Nanowire, oxide charger, proton irradiation

Relation: SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum; http://dx.doi.org/10.1109/SBMicro.2017.8113022; SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.; http://hdl.handle.net/11449/170551; 2-s2.0-85040568694; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/170551
https://doi.org/10.1109/SBMicro.2017.8113022

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17

Conference

Back gate influence on transistor efficiency of SOI nMOS Ω-gate nanowire down to 10nm width

المؤلفون: Itocazu, Vitor T., Almeida, Luciano M., Sonnenberg, Victor, Agopian, Paula G. D., Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Martino, Joao A.

المساهمون: Universidade Estadual Paulista (UNESP)

مصطلحات موضوعية: Back gate, Nanowire, Omega-Gate, SOI, Transistor Efficiency

Relation: SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum; http://dx.doi.org/10.1109/SBMicro.2017.8113021; SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.; http://hdl.handle.net/11449/170552; 2-s2.0-85040572543; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/170552
https://doi.org/10.1109/SBMicro.2017.8113021

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18

Conference

On the assessment of electrically active defects in high-mobility materials and devices

المؤلفون: Simoen, Eddy, Eneman, Geert, De Oliveira, Alberto Vinicius, Ni, Kai, Mitard, Jerome, Witters, Liesbeth, Der Agopian, Paula Ghedini, Martino, Joao Antonio, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Collaert, Nadine, Thean, Aaron, Claeys, Cor

المساهمون: Universidade Estadual Paulista (UNESP)

وصف الملف: 300-303

Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings; http://dx.doi.org/10.1109/ICSICT.2016.7998903; 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.; http://hdl.handle.net/11449/170090; 2-s2.0-85028684734

الاتاحة: http://hdl.handle.net/11449/170090
https://doi.org/10.1109/ICSICT.2016.7998903

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19

Conference

Low-frequency and random telegraph noise performance of Ge-based and III-V devices on a Si platform

المؤلفون: Claeys, Cor, Agopian, Paula, Alian, Alirezza, Arimura, Hiroaki, Fang, Wen, Martino, Joao, Mitard, Jerome, Neves, Felipe, Oliviera, Alberto, Simoen, Eddy

المساهمون: Universidade Estadual Paulista (UNESP)

وصف الملف: 288-293

Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings; http://dx.doi.org/10.1109/ICSICT.2016.7998900; 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 288-293.; http://hdl.handle.net/11449/170089; 2-s2.0-85028681516; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/170089
https://doi.org/10.1109/ICSICT.2016.7998900

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20

Conference

Zero Temperature Coefficient behavior for advanced MOSFETs

المؤلفون: Martino, Joao, Mesquita, Vinicius, Macambira, Christian, Itocazu, Vitor, Almeida, Luciano, Agopian, Paula, Simoen, Eddy, Claeys, Cor

المساهمون: Universidade Estadual Paulista (UNESP)

وصف الملف: 785-788

Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings; http://dx.doi.org/10.1109/ICSICT.2016.7999041; 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 785-788.; http://hdl.handle.net/11449/170085; 2-s2.0-85028643147; 0496909595465696; orcid:0000-0002-0886-7798

الاتاحة: http://hdl.handle.net/11449/170085
https://doi.org/10.1109/ICSICT.2016.7999041

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