المؤلفون: Li, Helong, Zhao, Shuang, Wang, Xiongfei, Ding, Lijian, Mantooth, Homer Alan

المصدر: IEEE transactions on power electronics. 38(8):9731-9749

مصطلحات موضوعية: Current imbalance, multichip power module, parallel connection, SiC metal oxide semiconductor field effect transistor (mosfet)

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-333024
https://doi.org/10.1109/TPEL.2023.3278270

المؤلفون: Shao Weihua, Li Ran, Zeng Zheng, Li Xiaoling, Philip Mawby

المصدر: The Journal of Engineering (2019)

مصطلحات موضوعية: multichip modules, electromagnetic interference, silicon compounds, power semiconductor devices, wide band gap semiconductors, power MOSFET, finite element analysis, SiC multichip power module, symmetrical inductance, silicon carbide devices, SiC power modules, high voltage spikes, unbalanced stray inductance, uneven current sharing, parallel devices, SiC devices, voltage spike mechanisms, multichip power modules, stray inductance distribution, finite element modelling software, current sharing consistency, parallel chips, symmetrical DBC layout, voltage spike reduction, asymmetrical layouts, current loops, stray inductance extraction, equivalent stray inductance, SiC MOSFET MCPM, direct bonded copper layout conditions, EMI issues, double pulse simulation, SiC, Engineering (General). Civil engineering (General), TA1-2040

وصف الملف: electronic resource

Relation: https://digital-library.theiet.org/content/journals/10.1049/joe.2018.8103; https://doaj.org/toc/2051-3305

URL الوصول: https://doaj.org/article/2b931effc7ea434e99c11a18ef339530

المؤلفون: Cheng Zhao, Fan Zhang, Jianpeng Wang, Binyu Wang, Jia Lixin, Christoph Friedrich Bayer, Fengtao Yang, Jan Abraham Ferreira, Laili Wang

المساهمون: Power Electronics, Digital Society Institute, Publica

المصدر: IEEE Transactions on Power Electronics, 37(2):9520279, 1615-1629. IEEE

مصطلحات موضوعية: Materials science, multichip module, Thermal resistance, packaging, Silicon carbide, chemistry.chemical_compound, MOSFET, Reliability (semiconductor), Planar, Power semiconductor device, Multichip modules, Electrical and Electronic Engineering, multichip power module, Electronic packaging thermal management, parallel MOSFETs, Substrates, business.industry, Electrical engineering, chemistry, Power module, 2023 OA procedure, business, Cooling, Switches, Decoupling (electronics)

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9659f44d4febac689729c274f3779b2b
https://doi.org/10.1109/tpel.2021.3106316

المؤلفون: Zhang, Man, Li, Helong, Yang, Zhiqing, Zhao, Shuang, Wang, Xiongfei, Ding, Lijian

المصدر: 2023 25TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, EPE'23 ECCE EUROPE European Conference on Power Electronics and Applications.

مصطلحات موضوعية: SiC MOSFETs, Parallel Connection, Multichip Power Module, Layout Design

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-344739

المؤلفون: Yang, F., Lixin, J., Wang, L., Zhang, F., Wang, B., Zhao, C., Wang, J., Bayer, C.F., Ferreira, J.A.

مصطلحات موضوعية: cooling, electronic packaging thermal management, MOSFET, multichip module, multichip power module, packaging, parallel MOSFETs, silicon carbide, substrates, switches

Time: 670, 621, 620, 530

Relation: IEEE transactions on power electronics; https://publica.fraunhofer.de/handle/publica/270283

الاتاحة: https://publica.fraunhofer.de/handle/publica/270283
https://doi.org/10.1109/TPEL.2021.3106316

المؤلفون: Xiongfei Wang, Daohui Li, Xiaoping Dai, Yangang Wang, Helong Li, Wei Zhou, Stig Munk-Nielsen

المصدر: Li, H, Zhou, W, Wang, X, Munk-Nielsen, S, Li, D, Wang, Y & Dai, X 2018, ' Influence of Paralleling Dies and Paralleling Half-Bridges on Transient Current Distribution in Multichip Power Modules ', I E E E Transactions on Power Electronics, vol. 33, no. 8, pp. 6483-6487 . https://doi.org/10.1109/TPEL.2018.2797326

مصطلحات موضوعية: Parallel connection, business.industry, Computer science, 020209 energy, 020208 electrical & electronic engineering, Electrical engineering, 02 engineering and technology, Stray inductance, Insulated-gate bipolar transistor, Multichip power module, Transient current, IGBT, Inductance, Power module, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, SiC MOSFET, Commutation, Current distribution, Electrical and Electronic Engineering, Current (fluid), business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28f25787c2af9bde65870edf2d49016c
https://vbn.aau.dk/da/publications/477e607f-e8bf-4ecf-9cf1-3717425de47f

المؤلفون: Ouhab, Merouane, Khatir, Zoubir, Ibrahim, Ali, Ousten, Jean Pierre, Mitova, Radoslava, Wang, Miao-Xin

المساهمون: Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers CNAM (CNAM)-Centre National de la Recherche Scientifique (CNRS), Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR), Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-PRES Université Paris-Est, Schneider Electric (SE)

المصدر: ISSN: 0885-8993 ; IEEE Transactions on Power Electronics ; https://hal.science/hal-01723547 ; IEEE Transactions on Power Electronics, 2018, 33 (6), pp.5292 - 5301. ⟨10.1109/TPEL.2017.2736534⟩.

مصطلحات موضوعية: ELECTRO-THERMAL MODELING, MOTOR DRIVE, ANALYTICAL MODEL, MULTICHIP POWER MODULE, TEMPERATURE SENSORS, THERMAL IMPEDANCES, PUISSANCE, CAPTEUR THERMIQUE, IMPEDANCE, MODELISATION ELECTROTHERMIQUE, [SPI.TRON]Engineering Sciences [physics]/Electronics

الاتاحة: https://hal.science/hal-01723547
https://doi.org/10.1109/TPEL.2017.2736534

المؤلفون: Zoubir Khatir, Ali Ibrahim, Jean-Pierre Ousten, Radoslava Mitova, Merouane Ouhab, Miao-Xin Wang

المساهمون: Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), École normale supérieure - Cachan (ENS Cachan)-Université Paris-Sud - Paris 11 (UP11)-Institut Français des Sciences et Technologies des Transports, de l'Aménagement et des Réseaux (IFSTTAR)-École normale supérieure - Rennes (ENS Rennes)-Université de Cergy Pontoise (UCP), Université Paris-Seine-Université Paris-Seine-Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Centre National de la Recherche Scientifique (CNRS), Schneider Electric ( SE)

المصدر: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2018, 33 (6), pp.5292-5301. ⟨10.1109/TPEL.2017.2736534⟩

مصطلحات موضوعية: Engineering, TEMPERATURE SENSORS, Computation, 0211 other engineering and technologies, 02 engineering and technology, 7. Clean energy, Temperature measurement, MULTICHIP POWER MODULE, IMPEDANCE, Control theory, ELECTRO-THERMAL MODELING, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrical and Electronic Engineering, Electrical impedance, CAPTEUR THERMIQUE, MODELISATION ELECTROTHERMIQUE, 021103 operations research, business.industry, 020208 electrical & electronic engineering, Power (physics), MOTOR DRIVE, [SPI.TRON]Engineering Sciences [physics]/Electronics, ANALYTICAL MODEL, Motor drive, THERMAL IMPEDANCES, Power module, Junction temperature, PUISSANCE, business, Pulse-width modulation

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9477b55d1e44d12718cac3e278e2802b
https://hal.archives-ouvertes.fr/hal-01723547