المؤلفون: Schäfer, Christian Martin

Thesis Advisors: Garrido Ariza, José Antonio, Sort Viñas, Jordi

المصدر: TDX (Tesis Doctorals en Xarxa)

مصطلحات موضوعية: Materials 2D, Materiales 2D, 2D materials, MoS2, MOCVD, Ciències Experimentals

وصف الملف: application/pdf

URL الوصول: http://hdl.handle.net/10803/689757

المؤلفون: Kucinski, Theresa, Dhall, Rohan, Savitzky, Benjamin, Ophus, Colin, Karkee, Rijan, Mishra, Avanish, Dervishi, Enkeleda, Kang, Jung, Lee, Chul-Ho, Yoo, Jinkyoung, Pettes, Michael

المصدر: ACS Nano. 18(27)

مصطلحات موضوعية: 2D materials, 4D-STEM, MOCVD, orientation, strain, thermal expansion

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/8qb0q2fr
https://escholarship.org/content/qt8qb0q2fr/qt8qb0q2fr.pdf

المؤلفون: Vilasam, Aswani Gopakumar Saraswathy, Adhikari, Sonachand, Gupta, Bikesh, Balendhran, Sivacarendran, Higashitarumizu, Naoki, Tournet, Julie, Li, Lily, Javey, Ali, Crozier, Kenneth B, Karuturi, Siva, Jagadish, Chennupati, Tan, Hark Hoe

المصدر: Nanotechnology. 34(49)

مصطلحات موضوعية: Physical Sciences, Engineering, Nanotechnology, Condensed Matter Physics, InAs, nanowires, MOCVD, van der waals epitaxy, polycrystalline thin film, MSD-General, MSD-EMAT, Nanoscience & Nanotechnology

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/2xn4t9x3
https://escholarship.org/content/qt2xn4t9x3/qt2xn4t9x3.pdf

المؤلفون: Felix Mauerhoff, Oktay Senel, Hans Wenzel, André Maaßdorf, Jos Boschker, Johannes Glaab, Katrin Paschke, Günther Tränkle

المصدر: IET Optoelectronics, Vol 18, Iss 5, Pp 140-145 (2024)

مصطلحات موضوعية: III‐V semiconductors, fabry‐perot resonators, MOCVD, semiconductor epitaxial layers, semiconductor lasers, semiconductor quantum wells, Applied optics. Photonics, TA1501-1820

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1751-8768; https://doaj.org/toc/1751-8776

URL الوصول: https://doaj.org/article/af4b5b5307a84cf5bfc34445bd5fa6bb

المؤلفون: Fu‐Gow Tarntair, Chih‐Yang Huang, Siddharth Rana, Kun‐Lin Lin, Shao‐Hui Hsu, Yu‐Cheng Kao, Singh Jitendra Pratap, Yi‐Che Chen, Niall Tumilty, Po‐Liang Liu, Ray‐Hua Horng

المصدر: Advanced Electronic Materials, Vol 11, Iss 1, Pp n/a-n/a (2025)

مصطلحات موضوعية: density functional theory, heteroepitaxial Ga2O3, MOCVD, in situ doping, TEOS, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/2dfb5ab4913e45669651e65a76908bca

المؤلفون: Yueh-Han Chuang, Fu-Gow Tarntair, Tzu-Wei Wang, Anoop Kumar Singh, Po-Liang Liu, Dong-Sing Wuu, Hao-Chung Kuo, Xiuling Li, Ray-Hua Horng

المصدر: Applied Surface Science Advances, Vol 26, Iss , Pp 100711- (2025)

مصطلحات موضوعية: Al diffusion, ꞵ-Ga2O3, Enhancement-mode MOSFETs, Gate field plate, MOCVD, Oxygen vacancies, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial electrochemistry, TP250-261

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2666523925000200; https://doaj.org/toc/2666-5239

URL الوصول: https://doaj.org/article/53f5fd5d32da4700a7048af9330367ab

المؤلفون: Zhang, Hengfang, Persson, Ingemar, Chen Jr., Tai, Papamichail, Alexis, Tran, Dat Q., Persson, Per O. Å., Paskov, Plamen P., Darakchieva, Vanya

المصدر: Crystal Growth and Design NanoLund: Centre for Nanoscience. 23(2):1049-1056

مصطلحات موضوعية: N-polar GaN, polarity, TEM, MOCVD, Teknik, Materialteknik, Engineering and Technology, Materials Engineering

URL الوصول: https://lup.lub.lu.se/record/36fcc436-27b9-49e1-84b4-de6347561b70
http://dx.doi.org/10.1021/acs.cgd.2c01199

المؤلفون: Manijeh Razeghi, Quanyong Lu

المصدر: Photonics, Vol 12, Iss 1, p 79 (2025)

مصطلحات موضوعية: quantum cascade laser, terahertz source, frequency comb, MOCVD, inter-sub-band semiconductor lasers, Applied optics. Photonics, TA1501-1820

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2304-6732/12/1/79; https://doaj.org/toc/2304-6732

URL الوصول: https://doaj.org/article/975267e65aa243f8a165581015aefc04

المؤلفون: Tornberg, Marcus, Maliakkal, Carina B., Jacobsson, Daniel, Wallenberg, Reine, Dick, Kimberly A.

المصدر: Microscopy and Microanalysis NanoLund: Centre for Nanoscience. 28(5):1484-1492

مصطلحات موضوعية: electron microscopy, energy-dispersive spectroscopy, environmental-TEM, in situ, instrumentation, MOCVD, Naturvetenskap, Kemi, Materialkemi, Natural Sciences, Chemical Sciences, Materials Chemistry

URL الوصول: https://lup.lub.lu.se/record/4e30ed96-65e0-46a5-82a3-6217b97fb20c
http://dx.doi.org/10.1017/S1431927622000769

المؤلفون: Oliver Maßmeyer, Jürgen Belz, Badrosadat Ojaghi Dogahe, Maximilian Widemann, Robin Günkel, Johannes Glowatzki, Max Bergmann, Sergej Pasko, Simonas Krotkus, Michael Heuken, Andreas Beyer, Kerstin Volz

المصدر: Advanced Materials Interfaces, Vol 11, Iss 23, Pp n/a-n/a (2024)

مصطلحات موضوعية: 2D, grain boundaries, graphene, MOCVD, moiré, STEM, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/055ed01e55424e8cb7319f1cebab7f4d

المؤلفون: Alireza Lanjani, Benjamin McEwen, Vincent Meyers, David Hill, Winston K. Chan, Emma Rocco, Shadi Omranpour, F. Shahedipour-Sandvik

المصدر: IEEE Photonics Journal, Vol 16, Iss 5, Pp 1-6 (2024)

مصطلحات موضوعية: III-nitrides, infrared detectors, quantum-well devices, MOCVD, Applied optics. Photonics, TA1501-1820, Optics. Light, QC350-467

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10659068/; https://doaj.org/toc/1943-0655

URL الوصول: https://doaj.org/article/0557f4513c90445f82b371906fa85d8b

المؤلفون: Londoño-Calderon, Alejandra, Dhall, Rohan, Ophus, Colin, Schneider, Matthew, Wang, Yongqiang, Dervishi, Enkeleda, Kang, Hee Seong, Lee, Chul-Ho, Yoo, Jinkyoung, Pettes, Michael T

المصدر: Nano Letters. 22(6)

مصطلحات موضوعية: Engineering, Materials Engineering, Physical Sciences, 4D-STEM, 2D materials, grain boundaries, MOCVD, orientation, strain, Nanoscience & Nanotechnology

وصف الملف: application/pdf

URL الوصول: https://escholarship.org/uc/item/3mh0858m
https://escholarship.org/content/qt3mh0858m/qt3mh0858m.pdf

المؤلفون: Yang Liu, Xue Yang, Xiaowei Zhou, Peixian Li, Bo Yang, Zhuang Zhao, Yingru Xiang, Junchun Bai

المصدر: Micromachines, Vol 15, Iss 12, p 1420 (2024)

مصطلحات موضوعية: superlattice, MOCVD, periodic thickness, hole concentration, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/15/12/1420; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/36def10d01944168b4e7f68c34c4d774

المؤلفون: Kinga Majkowycz, Krzysztof Murawski, Małgorzata Kopytko, Krzesimir Nowakowski-Szkudlarek, Marta Witkowska-Baran, Piotr Martyniuk

المصدر: Nanomaterials, Vol 14, Iss 19, p 1612 (2024)

مصطلحات موضوعية: DLTS, MOCVD, MBE, MCT, T2SL, wet etching, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/14/19/1612; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/57318bb9090b40a283e2e657222c7ae1

المؤلفون: Devki N. Talwar, Zhe Chuan Feng

المصدر: Molecules, Vol 29, Iss 17, p 4188 (2024)

مصطلحات موضوعية: (AlxGa1−x)yIn1−yP alloys, MOCVD-grown epilayers, photoluminescence, Raman scattering, Fourier-transform infrared spectroscopy, macroscopic models, Organic chemistry, QD241-441

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1420-3049/29/17/4188; https://doaj.org/toc/1420-3049

URL الوصول: https://doaj.org/article/1ecb137a46674647827c453356618f10

المؤلفون: Vernier, Simon, Astié, Vincent, Decams, Jean-Manuel, Jimenez, Carmen, Burriel, Mónica

المساهمون: Laboratoire des matériaux et du génie physique (LMGP), Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Université Grenoble Alpes (UGA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP), Centre National de la Recherche Scientifique (CNRS), Annealsys (Annealsys), Programme conjoint CNRS - Imperial College London, Centre national de la Recherche Scientifique (CNRS), European Project: 101017709,EPistore

المصدر: 4e réunion plénière de la fédération hydrogène du CNRS
https://hal.science/hal-04777024
4e réunion plénière de la fédération hydrogène du CNRS, Centre national de la Recherche Scientifique (CNRS), Oct 2024, La Grande Motte, France

مصطلحات موضوعية: MOCVD, YSZ, SOC, [CHIM.MATE]Chemical Sciences/Material chemistry

جغرافية الموضوع: La Grande Motte, France

Relation: info:eu-repo/grantAgreement//101017709/EU/Thin Film Reversible Solid Oxide Cells for Ultracompact Electrical Energy Storage/EPistore

الاتاحة: https://hal.science/hal-04777024

المؤلفون: Sjökvist, Robin, Tornberg, Marcus, Marnauza, Mikelis, Jacobsson, Daniel, Dick, Kimberly A.

المصدر: ACS Nanoscience AU NanoLund: Centre for Nanoscience. 2(6):539-548

مصطلحات موضوعية: Crystal growth dynamics, III-V, In situ TEM, InGaAs, MOCVD, Nanowire, Ternary semiconductor, Naturvetenskap, Fysik, Den kondenserade materiens fysik, Natural Sciences, Physical Sciences, Condensed Matter Physics

URL الوصول: https://lup.lub.lu.se/record/fdd1b0ea-a714-4b02-9b46-5f501548f27e
http://dx.doi.org/10.1021/acsnanoscienceau.2c00028

المؤلفون: Ilamparithy Selvakumar, Nils Boysen, Marco Bürger, Anjana Devi

المصدر: Chemistry, Vol 5, Iss 3, Pp 2038-2055 (2023)

مصطلحات موضوعية: copper, silver, ALD, MOCVD, N-coordinated precursors, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2624-8549/5/3/138; https://doaj.org/toc/2624-8549

URL الوصول: https://doaj.org/article/5d45f50b8d9a4effa1291d0ddd75a2a9

المؤلفون: Kristina Bespalova, Glenn Ross, Sami Suihkonen, Mervi Paulasto‐Kröckel

المصدر: Advanced Electronic Materials, Vol 10, Iss 4, Pp n/a-n/a (2024)

مصطلحات موضوعية: aluminum nitride (AlN), MOCVD, surface roughness, thin film, vertical sidewall, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/113486a638c74e81aa8966a929e87e13

المؤلفون: Zhang, Hengfang, Chen, Jr-Tai, Papamichail, Alexis, Persson, Ingemar, Tran, Dat, Paskov, Plamen, Darakchieva, Vanya

المصدر: Journal of Crystal Growth. 651

مصطلحات موضوعية: N-polar GaN, epitaxial growth, SiC substrate misorientation angle, Multi-step temperature growth, MOCVD

وصف الملف: print

URL الوصول: https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-210437