المؤلفون: Tanous, D, Mazurak, A, Majkusiak, B

المصدر: Journal of Physics: Conference Series ; volume 709, page 012012 ; ISSN 1742-6588 1742-6596

الاتاحة: http://dx.doi.org/10.1088/1742-6596/709/1/012012
http://stacks.iop.org/1742-6596/709/i=1/a=012012/pdf
http://stacks.iop.org/1742-6596/709/i=1/a=012012?key=crossref.ba52cf11933c5c9af8301401439c4927

المؤلفون: Mazurak, A., Jasiński, J., Majkusiak, B.

المساهمون: National Science Centre Poland, National Centre for Research Development

المصدر: Microelectronic Engineering ; volume 215, page 111011 ; ISSN 0167-9317

الاتاحة: http://dx.doi.org/10.1016/j.mee.2019.111011
https://api.elsevier.com/content/article/PII:S0167931719301625?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0167931719301625?httpAccept=text/plain

المؤلفون: WIŚNIEWSKI, P.^1,2,3 piotr.wisniewski@pw.edu.pl, MAJKUSIAK, B.²

المصدر: Acta Physica Polonica: A. Aug2021, Vol. 140 Issue 2, p186-191. 6p.

مصطلحات موضوعية: *FIELD-effect transistors, *METAL oxide semiconductor field-effect transistors, *QUANTUM tunneling, *CURRENT-voltage characteristics, *SEMICONDUCTORS, *POISSON'S equation, *TRANSISTORS

المؤلفون: Mazurak, A., Jasinski, J., Majkusiak, B.

المصدر: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) ; page 194-197

الاتاحة: http://dx.doi.org/10.1109/ulis.2016.7440086
http://xplorestaging.ieee.org/ielx7/7435614/7440031/07440086.pdf?arnumber=7440086

المؤلفون: Tanous, D., Mazurak, A., Majkusiak, B.

المساهمون: Swatowska, Barbara, Maziarz, Wojciech, Pisarkiewicz, Tadeusz, Kucewicz, Wojciech

المصدر: SPIE Proceedings ; Electron Technology Conference 2016 ; ISSN 0277-786X

الاتاحة: http://dx.doi.org/10.1117/12.2261816

المؤلفون: SANGIORGI E, ALEXANDER C, ASENOV A, AUBRY-FORTUNA V, BACCARANI G, BOURNEL A, BRACCIOLI M, CHENG B, DOLLFUS P, ESPOSITO A, ESSENI D, FENOUILLET-BERANGER C, FIEGNA C, FIORI G, GHETTI A, IANNACCONE G, MARTINEZ A, MAJKUSIAK B, MONFRAY S, PALESTRI P, PEIKERT V, REGGIANI S, RIDDET C, SAINT-MARTIN J, SCHENK A, SELMI L, SILVESTRI L, WALCZAK J, TONIUTTI P

المساهمون: Sangiorgi, E, Alexander, C, Asenov, A, AUBRY-FORTUNA, V, Baccarani, G, Bournel, A, Braccioli, M, Cheng, B, Dollfus, P, Esposito, A, Esseni, D, FENOUILLET-BERANGER, C, Fiegna, C, Fiori, G, Ghetti, A, Iannaccone, G, Martinez, A, Majkusiak, B, Monfray, S, Palestri, P, Peikert, V, Reggiani, S, Riddet, C, SAINT-MARTIN, J, Schenk, A, Selmi, L, Silvestri, L, Walczak, J, Toniutti, P

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781424472000; ispartofbook:Proceedings 27th International Conference on Microelectronics (MIEL 2010); International Conference on Microelectronics (MIEL 2010); firstpage:3; lastpage:7; numberofpages:5; http://hdl.handle.net/11390/881573; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-77955214216

الاتاحة: http://hdl.handle.net/11390/881573
https://doi.org/10.1109/MIEL.2010.5490539

المؤلفون: MAJKUSIAK B., SCHENK A., SPINELLI A., S. COMPAGNONI C. M., LUISIER M., PALESTRI, Pierpaolo

المساهمون: BALESTRA F., Majkusiak, B., Palestri, Pierpaolo, Schenk, A., Spinelli, A., S. COMPAGNONI C., M., Luisier, M.

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781848211803; ispartofbook:Nanoscale CMOS - Innovative Materials, Modeling and Characterization; firstpage:213; lastpage:258; numberofpages:46; http://hdl.handle.net/11390/877781

الاتاحة: http://hdl.handle.net/11390/877781

المؤلفون: Mazurak, A., Mroczyński, R., Jasiński, J., Tanous, D., Majkusiak, B., Kano, S., Sugimoto, H., Fujii, M., Valenta, J.

المساهمون: Narodowe Centrum Badań i Rozwoju

المصدر: Microelectronic Engineering ; volume 178, page 298-303 ; ISSN 0167-9317

الاتاحة: http://dx.doi.org/10.1016/j.mee.2017.05.050
https://api.elsevier.com/content/article/PII:S0167931717302666?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0167931717302666?httpAccept=text/plain

المؤلفون: Tanous, D., Mazurak, A., Majkusiak, B.

المساهمون: Narodowe Centrum Nauki, Narodowe Centrum Badań i Rozwoju

المصدر: Microelectronic Engineering ; volume 178, page 173-177 ; ISSN 0167-9317

الاتاحة: http://dx.doi.org/10.1016/j.mee.2017.05.013
https://api.elsevier.com/content/article/PII:S0167931717302101?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0167931717302101?httpAccept=text/plain

المؤلفون: PALESTRI, Pierpaolo, ESSENI, David, SELMI, Luca, ALEXANDER C, ASENOV A, BACCARANI G, BOURNEL A, BRACCIOLI M, CHENG B, DOLLFUS P, ESPOSITO A, GHETTI A, FIEGNA C, FIORI G, AUBRY FORTUNA V, IANNACCONE G, MARTINEZ A, MAJKUSIAK B, MONFRAY B, REGGIANI S, RIDDET C, SAINT MARTIN J, SANGIORGI E, SCHENK A, SILVESTRI L, WALCZAK J.

المساهمون: Palestri, Pierpaolo, Alexander, C, Asenov, A, Baccarani, G, Bournel, A, Braccioli, M, Cheng, B, Dollfus, P, Esposito, A, Esseni, David, Ghetti, A, Fiegna, C, Fiori, G, AUBRY FORTUNA, V, Iannaccone, G, Martinez, A, Majkusiak, B, Monfray, B, Reggiani, S, Riddet, C, SAINT MARTIN, J, Sangiorgi, E, Schenk, A, Selmi, Luca, Silvestri, L, Walczak, J.

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781424437047; info:eu-repo/semantics/altIdentifier/wos/WOS:000266761300030; ispartofbook:Proceedings International Conference on Ultimate Integration of Silicon (ULIS); European Workshop on Ultimate Integration of Silicon (ULIS); firstpage:125; lastpage:128; numberofpages:5; http://hdl.handle.net/11390/881745; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-67650690638

الاتاحة: http://hdl.handle.net/11390/881745
https://doi.org/10.1109/ULIS.2009.4897554

المؤلفون: Majkusiak, B., Jakubowski, A.

المصدر: Journal of Applied Physics. 10/15/1985, Vol. 58 Issue 8, p3141. 4p. 3 Diagrams.

مصطلحات موضوعية: *QUANTUM tunneling, *ELECTRIC conductivity, *METAL-insulator transitions

المؤلفون: Sakowicz, M., Łusakowski, J., Karpierz, K., Grynberg, M., Majkusiak, B., Tauk, R., Tiberj, A., Knap, W., Bougrioua, Z., Azize, M., Lorenzini, P., Boeuf, F., Skotnicki, T.

المصدر: AIP Conference Proceedings ; volume 893, page 1379-1380 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.2730417

المؤلفون: Majkusiak, B., Walczak, J.

المصدر: Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment ; NATO Science Series II: Mathematics, Physics and Chemistry ; page 309-320 ; ISBN 1402030118

الاتاحة: http://dx.doi.org/10.1007/1-4020-3013-4_36
http://link.springer.com/content/pdf/10.1007/1-4020-3013-4_36.pdf

المؤلفون: Majkusiak, B., Beck, R.B., Mazurak, A., Grabowski, J.

المصدر: Microelectronics Reliability ; volume 51, issue 7, page 1172-1177 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/j.microrel.2011.03.018
https://api.elsevier.com/content/article/PII:S0026271411000941?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271411000941?httpAccept=text/plain

المؤلفون: Palestri, P., Alexander, C., Asenov, A., Aubry-Fortuna, V., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Fenouillet-Beranger, C., Fiegna, C., Fiori, G., Ghetti, A., Iannaccone, G., Martinez, A., Majkusiak, B., Monfray, S., Peikert, V., Reggiani, S., Riddet, C., Saint-Martin, J., Sangiorgi, E., Schenk, A., Selmi, L., Silvestri, L., Toniutti, P., Walczak, J.

Relation: Palestri, P. et al. (2009) A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs. Solid-State Electronics , 53(12), pp. 1293-1302. (doi:10.1016/j.sse.2009.09.019 )

الاتاحة: http://eprints.gla.ac.uk/50357/

المؤلفون: Palestri, P., Barin, N., Brunel, D., Busseret, C., Campera, A., Childs, P. A., Driussi, F., Fiegna, C., Fiori, G., Gusmeroli, R., Iannaccone, G., Karner, M., Kosina, H., Lacaita, A. L., Langer, E., Majkusiak, B., Compagnoni, C. Monzio, Poncet, A., Sangiorgi, E., Selmi, L., Spinelli, A. S., Walczak, J.

المصدر: IEEE Transactions on Electron Devices ; volume 54, issue 1, page 106-114 ; ISSN 0018-9383

الاتاحة: http://dx.doi.org/10.1109/ted.2006.887226
http://xplorestaging.ieee.org/ielx5/16/4039685/04039708.pdf?arnumber=4039708

المؤلفون: Sakowicz, M., Łusakowski, J., Karpierz, K., Grynberg, M., Majkusiak, B.

المصدر: Applied Physics Letters ; volume 90, issue 17 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.2731713
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2731713/14371683/172104_1_online.pdf

المؤلفون: Palestri, P., Alexander, C., Asenov, A., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Ghetti, A., Fiegna, C., Fiori, Gianluca, AUBRY FORTUNA, V., Iannaccone, Giuseppe, Martinez, A., Majkusiak, B, Monfray, S., Reggiani, S., Riddet, C., SAINT MARTIN, J., Sangiorgi, E., Schenk, A., Selmi, L., Silvestri, L., Walczak, J.

URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______3728::3516a774a8b70d3b53ded56b3ea91554
http://hdl.handle.net/11568/135467

المؤلفون: Majkusiak, B., Walczak, J.

المصدر: Journal of Computational Electronics ; volume 5, issue 2-3, page 143-148 ; ISSN 1569-8025 1572-8137

الاتاحة: http://dx.doi.org/10.1007/s10825-006-8834-1
http://link.springer.com/content/pdf/10.1007/s10825-006-8834-1.pdf
http://link.springer.com/article/10.1007/s10825-006-8834-1/fulltext.html
http://link.springer.com/content/pdf/10.1007/s10825-006-8834-1

المؤلفون: Kosiel, K., Dobrzanski, L., Majkusiak, B., Jasik, A.

المصدر: Journal of Wide Bandgap Materials ; volume 9, issue 1-2, page 93-100 ; ISSN 1524-511X

الاتاحة: http://dx.doi.org/10.1106/152451102025833