يعرض 1 - 17 نتائج من 17 نتيجة بحث عن '"Lv, Yuan-Jie"', وقت الاستعلام: 0.50s تنقيح النتائج
  1. 1
    Academic Journal
    Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes

    المؤلفون: Zhou, Xing-Ye, Lv, Yuan-Jie, Guo, Hong-Yu, Gu, Guo-Dong, Wang, Yuan-Gang, Liang, Shi-Xiong, Bu, Ai-Min, Feng, Zhi-Hong

    المصدر: Chinese Physics B ; volume 32, issue 3, page 038502 ; ISSN 1674-1056

    الاتاحة: http://dx.doi.org/10.1088/1674-1056/ac9820
    https://iopscience.iop.org/article/10.1088/1674-1056/ac9820
    https://iopscience.iop.org/article/10.1088/1674-1056/ac9820/pdf

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  2. 2
    Academic Journal
    Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment*

    المؤلفون: Zhou, Xing-Ye, Tan, Xin, Lv, Yuan-Jie, Gu, Guo-Dong, Zhang, Zhi-Rong, Guo, Yan-Min, Feng, Zhi-Hong, Cai, Shu-Jun

    المصدر: Chinese Physics B ; volume 30, issue 2, page 028502 ; ISSN 1674-1056

    الاتاحة: http://dx.doi.org/10.1088/1674-1056/abb7f6
    https://iopscience.iop.org/article/10.1088/1674-1056/abb7f6
    https://iopscience.iop.org/article/10.1088/1674-1056/abb7f6/pdf

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  3. 3
    Conference
    Time-varying Target Characteristic Analysis of Dual Stealth Aircraft Formation

    المؤلفون: Bao, Lei, Wang, Chun-yang, Bai, Juan, Wei, Sheng-jun, Tan, Ming, Lv, Yuan-jie

    المصدر: Proceedings of the 2019 3rd High Performance Computing and Cluster Technologies Conference

    الاتاحة: http://dx.doi.org/10.1145/3341069.3342977
    https://dl.acm.org/doi/pdf/10.1145/3341069.3342977

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  4. 4
    Academic Journal
    Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

    المؤلفون: Cui, Peng, Lin, Zhao-Jun, Fu, Chen, Liu, Yan, Lv, Yuan-Jie

    المصدر: Chinese Physics B ; volume 26, issue 12, page 127102 ; ISSN 1674-1056

    الاتاحة: http://dx.doi.org/10.1088/1674-1056/26/12/127102
    https://iopscience.iop.org/article/10.1088/1674-1056/26/12/127102/pdf
    https://iopscience.iop.org/article/10.1088/1674-1056/26/12/127102

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  5. 5
    Academic Journal
    Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

    المؤلفون: Liu, Yan, Lin, Zhao-Jun, Lv, Yuan-Jie, Cui, Peng, Fu, Chen, Han, Ruilong, Huo, Yu, Yang, Ming

    المصدر: Chinese Physics B ; volume 26, issue 9, page 097104 ; ISSN 1674-1056

    الاتاحة: http://dx.doi.org/10.1088/1674-1056/26/9/097104
    https://iopscience.iop.org/article/10.1088/1674-1056/26/9/097104/pdf
    https://iopscience.iop.org/article/10.1088/1674-1056/26/9/097104

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  6. 6
    Academic Journal
    Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al 2 O 3 Gate Dielectric

    المؤلفون: Tan, Xin, Zhou, Xing-Ye, Guo, Hong-Yu, Gu, Guo-Dong, Wang, Yuan-Gang, Song, Xu-Bo, Yin, Jia-Yun, Lv, Yuan-Jie, Feng, Zhi-Hong

    المصدر: Chinese Physics Letters ; volume 33, issue 9, page 098501 ; ISSN 0256-307X 1741-3540

    الاتاحة: http://dx.doi.org/10.1088/0256-307x/33/9/098501
    https://iopscience.iop.org/article/10.1088/0256-307X/33/9/098501/pdf
    https://iopscience.iop.org/article/10.1088/0256-307X/33/9/098501

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  7. 7
    Academic Journal
    Modified model of gate leakage currents in AlGaN/GaN HEMTs

    المؤلفون: Wang, Yuan-Gang, Feng, Zhi-Hong, Lv, Yuan-Jie, Tan, Xin, Dun, Shao-Bo, Fang, Yu-Long, Cai, Shu-Jun

    المصدر: Chinese Physics B ; volume 25, issue 10, page 107106 ; ISSN 1674-1056

    الاتاحة: http://dx.doi.org/10.1088/1674-1056/25/10/107106
    https://iopscience.iop.org/article/10.1088/1674-1056/25/10/107106/pdf
    https://iopscience.iop.org/article/10.1088/1674-1056/25/10/107106

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  8. 8
    Academic Journal
    High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

    المؤلفون: Guo, Hong-Yu, Lv, Yuan-Jie, Gu, Guo-Dong, Dun, Shao-Bo, Fang, Yu-Long, Zhang, Zhi-Rong, Tan, Xin, Song, Xu-Bo, Zhou, Xing-Ye, Feng, Zhi-Hong

    المصدر: Chinese Physics Letters ; volume 32, issue 11, page 118501 ; ISSN 0256-307X 1741-3540

    الاتاحة: http://dx.doi.org/10.1088/0256-307x/32/11/118501
    https://iopscience.iop.org/article/10.1088/0256-307X/32/11/118501/pdf
    https://iopscience.iop.org/article/10.1088/0256-307X/32/11/118501

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  9. 9
    Academic Journal
    High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

    المؤلفون: Fang, Yu-Long, Feng, Zhi-Hong, Li, Cheng-Ming, Song, Xu-Bo, Yin, Jia-Yun, Zhou, Xing-Ye, Wang, Yuan-Gang, Lv, Yuan-Jie, Cai, Shu-Jun

    المصدر: Chinese Physics Letters ; volume 32, issue 3, page 037202 ; ISSN 0256-307X 1741-3540

    الاتاحة: http://dx.doi.org/10.1088/0256-307x/32/3/037202
    https://iopscience.iop.org/article/10.1088/0256-307X/32/3/037202/pdf
    https://iopscience.iop.org/article/10.1088/0256-307X/32/3/037202

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  10. 10
    Academic Journal
    Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

    المؤلفون: Lv, Yuan-Jie, Feng, Zhi-Hong, Gu, Guo-Dong, Yin, Jia-Yun, Fang, Yu-Long, Wang, Yuan-Gang, Tan, Xin, Zhou, Xing-Ye, Lin, Zhao-Jun, Ji, Zi-Wu, Cai, Shu-Jun

    المصدر: Chinese Physics B ; volume 24, issue 8, page 087306 ; ISSN 1674-1056

    الاتاحة: http://dx.doi.org/10.1088/1674-1056/24/8/087306
    https://iopscience.iop.org/article/10.1088/1674-1056/24/8/087306/pdf
    https://iopscience.iop.org/article/10.1088/1674-1056/24/8/087306

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  11. 11
    Academic Journal
    Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

    المؤلفون: Yang, Ming, Lin, Zhao-Jun, Zhao, Jing-Tao, Wang, Yu-Tang, Li, Zhi-Yuan, Lv, Yuan-Jie, Feng, Zhi-Hong

    المصدر: Chinese Physics B ; volume 24, issue 11, page 117103 ; ISSN 1674-1056

    الاتاحة: http://dx.doi.org/10.1088/1674-1056/24/11/117103
    https://iopscience.iop.org/article/10.1088/1674-1056/24/11/117103/pdf
    https://iopscience.iop.org/article/10.1088/1674-1056/24/11/117103

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  12. 12
    Academic Journal
    Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN

    المؤلفون: Feng, Zhi-Hong, Wang, Xian-Bin, Wang, Li, Lv, Yuan-Jie, Fang, Yu-Long, Dun, Shao-Bo, Zhao, Zheng-Ping

    المصدر: Chinese Physics Letters ; volume 32, issue 8, page 087102 ; ISSN 0256-307X 1741-3540

    الاتاحة: http://dx.doi.org/10.1088/0256-307x/32/8/087102
    https://iopscience.iop.org/article/10.1088/0256-307X/32/8/087102/pdf
    https://iopscience.iop.org/article/10.1088/0256-307X/32/8/087102

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  13. 13
    Academic Journal
    Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching

    المؤلفون: Wang, Qiang, Ji, Zi-Wu, Xiao, Hong-Di, Lv, Hai-Yan, Li, Jian-Fei, Xu, Xian-Gang, Lv, Yuan-Jie, Feng, Zhi-Hong

    المصدر: Chinese Physics Letters ; volume 31, issue 8, page 088103 ; ISSN 0256-307X 1741-3540

    الاتاحة: http://dx.doi.org/10.1088/0256-307x/31/8/088103
    https://iopscience.iop.org/article/10.1088/0256-307X/31/8/088103/pdf
    https://iopscience.iop.org/article/10.1088/0256-307X/31/8/088103

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  14. 14
    Academic Journal
    Simulations of Breakdown Voltage of Coplanar Electrodes Microplasma Devices

    المؤلفون: Meng, Ling-Guo, Xing, Jian-Ping, Lv, Yuan-Jie, Liang, Zhi-Hu, Liu, Chun-Liang

    المصدر: IEEE Transactions on Plasma Science ; volume 41, issue 1, page 12-16 ; ISSN 0093-3813 1939-9375

    الاتاحة: http://dx.doi.org/10.1109/tps.2012.2227149
    http://xplorestaging.ieee.org/ielx5/27/6403593/06387317.pdf?arnumber=6387317

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  15. 15
    Academic Journal
    Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors.

    المؤلفون: Liu, Yan, Lin, Zhao-Jun, Yang, Ming, Luan, Chong-Biao, Wang, Yu-Tang, Lv, Yuan-Jie, Feng, Zhi-Hong

    المصدر: Modern Physics Letters B; Dec2016, Vol. 30 Issue 35, p-1, 12p

    مصطلحات موضوعية: FIELD-effect transistors, POLARIZATION (Electricity), ELECTRON mobility, COULOMB'S law, LOW temperatures, HETEROSTRUCTURES


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  16. 16
    Academic Journal
    Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors.

    المؤلفون: Zhao Jing-Tao, Wang Yu-Tang, Li Zhi-Yuan, Yang Ming, Lin Zhao-Jun, Lv Yuan-Jie, Feng Zhi-Hong

    المصدر: Chinese Physics B; Nov 2015, Vol. 24 Issue 11, p1-1, 1p

    مصطلحات موضوعية: HETEROJUNCTION field effect transistors, ALUMINUM gallium nitride, SUBSTRATES (Materials science), SWITCHING power supplies, ELECTRIC potential, TRANSMISSION line matrix methods


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  17. 17
    Academic Journal
    High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model.

    المؤلفون: Li Cheng-Ming, Fang Yu-Long, Feng Zhi-Hong, Song Xu-Bo, Yin Jia-Yun, Zhou Xing-Ye, Wang Yuan-Gang, Lv Yuan-Jie, Cai Shu-Jun

    المصدر: Chinese Physics Letters; Mar2015, Vol. 32 Issue 3, p1-1, 1p

    مصطلحات موضوعية: TRANSISTORS, TEMPERATURE, ELECTRONS, DENSITY, IONIC mobility, POLARIZATION (Electrochemistry)


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