المؤلفون: Isabel Streicher (14332633), Stefano Leone (208483), Christian Manz (13821956), Lutz Kirste (14332636), Mario Prescher (14332639), Patrick Waltereit (14332642), Michael Mikulla (14332645), Rüdiger Quay (14332648), Oliver Ambacher (1599169)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Cell Biology, Biotechnology, Ecology, Immunology, Plant Biology, Physical Sciences not elsewhere classified, sheet resistance (<, 98 × 10, 900 ° c, 52 × 10, 25 × 10, 1200 ° c, dimensional electron gas, nominal aln interlayer, aln interlayer increases, gan heterostructures suitable, graded algan interlayer, electron mobility transistors, sh , barrier growth temperature, ), 13 , gan heterostructures grown, graded algan interlayers, gan heterostructures, electron mobility,

Relation: https://figshare.com/articles/journal_contribution/Effect_of_AlN_and_AlGaN_Interlayers_on_AlScN_GaN_Heterostructures_Grown_by_Metal_Organic_Chemical_Vapor_Deposition/21821260

الاتاحة: https://doi.org/10.1021/acs.cgd.2c01013.s001