يعرض 1 - 20 نتائج من 49 نتيجة بحث عن '"Lu Bingrui"', وقت الاستعلام: 0.46s تنقيح النتائج
  1. 1
    Conference

    المصدر: Lu , B , Hansen , S E , Weis , T A S , Giri , R , Arregui Bravo , G & Stobbe , S 2023 , ' Design and All-In-One Etch of Silicon Metalens for Near-Infrared Focusing ' , 2023 Micro and Nano Engineering Conference , Berlin , Germany , 25/09/2023 - 28/09/2023 .

    وصف الملف: application/pdf

  2. 2
    Book

    المصدر: Advances in Optoelectronic Technology and Industry Development ; page 232-238 ; ISBN 9780429283628

  3. 3
    Academic Journal
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    Academic Journal

    المساهمون: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality

    المصدر: Nanoscale ; volume 14, issue 25, page 9045-9052 ; ISSN 2040-3364 2040-3372

  5. 5
    Electronic Resource
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  7. 7
    Academic Journal
  8. 8
    Academic Journal
  9. 9
    Conference

    المساهمون: School of Information Science and Engineering, Fundan University, Fudan University Shanghai, School of Engineering (Brown Engineering), Brown University, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

    المصدر: 2018 S3S Proceedings
    2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
    https://hal.science/hal-02010244
    2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.18.3, ⟨10.1109/S3S.2018.8640150⟩

    جغرافية الموضوع: San Francisco, United States

  10. 10
    Conference

    المساهمون: School of Information Science and Engineering, Fundan University, Fudan University Shanghai, School of Engineering (Brown Engineering), Brown University, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

    المصدر: 2018 S3S Proceedings
    2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
    https://hal.science/hal-02010253
    2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.18.5, ⟨10.1109/S3S.2018.8640169⟩

    جغرافية الموضوع: San Francisco, United States

  11. 11
    Academic Journal
  12. 12
    Academic Journal
  13. 13
    Academic Journal

    المساهمون: National Natural Science Foundation of China, Basic Research Project of Shanghai Science and Technology Innovation Action, Fudan University-CIOMP Joint Fund

    المصدر: Microelectronic Engineering ; volume 208, page 54-59 ; ISSN 0167-9317

  14. 14
    Academic Journal

    المساهمون: Fudan University, National Natural Science Foundation of China, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Shanghai Municipality

    المصدر: ACS Nano ; volume 13, issue 7, page 8433-8441 ; ISSN 1936-0851 1936-086X

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  16. 16
    Periodical
  17. 17
    Academic Journal

    المساهمون: School of Information Science and Engineering, Fundan University, Fudan University Shanghai, School of Engineering (Brown Engineering), Brown University, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes 2016-2019 (UGA 2016-2019 )

    المصدر: ISSN: 2168-6734 ; IEEE Journal of the Electron Devices Society ; https://hal.science/hal-02007005 ; IEEE Journal of the Electron Devices Society, 2018, 6, pp.557-564. ⟨10.1109/JEDS.2017.2788403⟩.

  18. 18
    Academic Journal
  19. 19
    Academic Journal
  20. 20
    Periodical