المؤلفون: Vyas, Pratik B., Megalini, Ludovico, Pal, Ashish, Holt, Joshua, Kumar, Archana, Weeks, Stephen, Zhao, Charisse, Date, Lucien, Lo, Hansel, Khoury, Michel, Muhammad, Safdar, Piallat, Fabian, Fang, Ricky, Charles, William, Palit, Pratim, Yang, Jinghe, Zhang, Qintao, Oh, Jang Seok, Turner, Bryan, Hong, Samphy, Pitchiya, Aswin Prathap, Briggs, Benjamin, Yang, Jiao, Yang, Dae, Wang, Fengshou, Lee, Joseph, Prabhu, Gopal, Ho, Dustin, Caballero, Carlos, Chaturvedula, Durga, Yuan, Zheng, Zheng, Yi, Britz, David A., Krause, Stephen, Sreenivasan, Raghav, Chudzik, Michael, Kengeri, Subi, Krishnan, Siddarth, Bazizi, El Mehdi

المصدر: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ; page 1-2

الاتاحة: http://dx.doi.org/10.1109/vlsitechnologyandcir46783.2024.10631445
http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631445.pdf?arnumber=10631445

المؤلفون: IEEE International Symposium on Reliability Physics 2024, Larcher, Luca, Lo, Hansel, Olsen, Christopher, Pesic, Milan, Rollo, Tommaso

مصطلحات موضوعية: Reliability Physics

Relation: https://dx.doi.org/10.1109/IRPS48228.2024.10529303

الاتاحة: https://dx.doi.org/10.48448/vpe3-xg18
https://underline.io/lecture/96142-blocking-oxide-material-engineering-to-improve-retention-loss-in-3d-nand-a-modeling-process-optimization-study