المؤلفون: Ardali, S., Sonmez, F., Lisesivdin, S.B., Malin, T., Mansurov, V., Zhuravlev, K., Tiras, E.

المصدر: Materials Science and Engineering: B ; volume 300, page 117075 ; ISSN 0921-5107

الاتاحة: http://dx.doi.org/10.1016/j.mseb.2023.117075
https://api.elsevier.com/content/article/PII:S0921510723008176?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0921510723008176?httpAccept=text/plain

المؤلفون: Narin, P., All Abbas, J.M., Kutlu-Narin, E., Lisesivdin, S.B., Ozbay, E.

المساهمون: Türkiye Bilimler Akademisi

المصدر: Computational Materials Science ; volume 222, page 112114 ; ISSN 0927-0256

الاتاحة: http://dx.doi.org/10.1016/j.commatsci.2023.112114
https://api.elsevier.com/content/article/PII:S0927025623001088?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0927025623001088?httpAccept=text/plain

المؤلفون: Atmaca, G., TaÅŸlı, Pınar Tünay, Karakoc, G., Yazbahar, E., Lisesivdin, S.B.

مصطلحات موضوعية: 2DEG, AlGaN, GaN, InGaN, InGaN/GaN MQW, Schrödinger-Poisson equation, 2DEG properties, AlGaN/AlN/GaN, Back barriers, InGaN/GaN, Numerical investigations, Two dimensional electron gas

Relation: Physica E: Low-Dimensional Systems and Nanostructures; Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı; https://hdl.handle.net/11499/10415; https://doi.org/10.1016/j.physe.2014.09.004; 65; 110; 113; WOS:000345821500018

الاتاحة: https://hdl.handle.net/11499/10415
https://doi.org/10.1016/j.physe.2014.09.004

المؤلفون: Mutlu, S., Erol, A., Arslan, E., Ozbay, E., Lisesivdin, S.B., Tiras, E.

المساهمون: Istanbul Üniversitesi, Anadolu Üniversitesi

المصدر: Journal of Alloys and Compounds ; volume 881, page 160511 ; ISSN 0925-8388

الاتاحة: http://dx.doi.org/10.1016/j.jallcom.2021.160511
https://api.elsevier.com/content/article/PII:S0925838821019204?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0925838821019204?httpAccept=text/plain

المؤلفون: Sonmez, F., Ardali, S., Atmaca, G., Lisesivdin, S.B., Malin, T., Mansurov, V., Zhuravlev, K., Tiras, E.

المساهمون: TUBITAK, RFBR

المصدر: Materials Science in Semiconductor Processing ; volume 122, page 105449 ; ISSN 1369-8001

الاتاحة: http://dx.doi.org/10.1016/j.mssp.2020.105449
https://api.elsevier.com/content/article/PII:S1369800120313846?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S1369800120313846?httpAccept=text/plain

المؤلفون: Hebal, H., Koziol, Z., Lisesivdin, S.B., Steed, R.

المصدر: Computational Materials Science ; volume 186, page 110015 ; ISSN 0927-0256

الاتاحة: http://dx.doi.org/10.1016/j.commatsci.2020.110015
https://api.elsevier.com/content/article/PII:S0927025620305061?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0927025620305061?httpAccept=text/plain

المؤلفون: Atmaca, G., Narin, P., Lisesivdin, S.B., Kasap, M., Sarikavak-Lisesivdin, B.

المصدر: Philosophical Magazine ; volume 95, issue 1, page 79-89 ; ISSN 1478-6435 1478-6443

الاتاحة: http://dx.doi.org/10.1080/14786435.2014.977976
http://www.tandfonline.com/doi/pdf/10.1080/14786435.2014.977976

المؤلفون: Tasli, P., Yildiz, A., Kasap, M., Ozbay, E., Lisesivdin, S.B., Ozcelik, S.

المصدر: Philosophical Magazine ; volume 90, issue 26, page 3591-3599 ; ISSN 1478-6435 1478-6443

الاتاحة: http://dx.doi.org/10.1080/14786435.2010.492357
http://www.tandfonline.com/doi/pdf/10.1080/14786435.2010.492357

المؤلفون: Sarikavak-Lisesivdin, B., Lisesivdin, S.B., Ozbay, E., Jelezko, F.

المساهمون: Türkiye Bilimler Akademisi

المصدر: Chemical Physics Letters ; volume 760, page 138006 ; ISSN 0009-2614

الاتاحة: http://dx.doi.org/10.1016/j.cplett.2020.138006
https://api.elsevier.com/content/article/PII:S0009261420309210?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0009261420309210?httpAccept=text/plain

المؤلفون: Kutlu-Narin, E., Narin, P., Yildiz, A., Lisesivdin, S.B.

المساهمون: Turkish Academy of Sciences

المصدر: Materials Science and Engineering: B ; volume 254, page 114506 ; ISSN 0921-5107

الاتاحة: http://dx.doi.org/10.1016/j.mseb.2020.114506
https://api.elsevier.com/content/article/PII:S0921510720300131?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0921510720300131?httpAccept=text/plain

المؤلفون: Narin, P., All Abbas, J.M., Atmaca, G., Kutlu, E., Lisesivdin, S.B., Ozbay, E.

المساهمون: TUBITAK, Turkish Academy of Sciences

المصدر: Solid State Communications ; volume 296, page 8-11 ; ISSN 0038-1098

الاتاحة: http://dx.doi.org/10.1016/j.ssc.2019.04.005
https://api.elsevier.com/content/article/PII:S0038109818308822?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038109818308822?httpAccept=text/plain

المؤلفون: Omeroglu, O., Kutlu, E., Narin, P., Lisesivdin, S.B., Ozbay, E.

المساهمون: TUBITAK, Turkish Academy of Sciences

المصدر: Physica E: Low-dimensional Systems and Nanostructures ; volume 104, page 124-129 ; ISSN 1386-9477

الاتاحة: http://dx.doi.org/10.1016/j.physe.2018.07.017
https://api.elsevier.com/content/article/PII:S1386947718304867?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S1386947718304867?httpAccept=text/plain

المؤلفون: Narin, P., Kutlu, E., Atmaca, G., Atilgan, A., Yildiz, A., Lisesivdin, S.B.

المصدر: Optik ; volume 168, page 86-91 ; ISSN 0030-4026

الاتاحة: http://dx.doi.org/10.1016/j.ijleo.2018.04.089
https://api.elsevier.com/content/article/PII:S0030402618305825?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0030402618305825?httpAccept=text/plain

المؤلفون: Narin P., Kutlu E., Atmaca G., Lişesivdin S.B., Özbay E.

المصدر: Optik

مصطلحات موضوعية: Ab initio, DFT, Optical properties, β-Si3N4, Calculations, Density functional theory, Gallium, Impurities, Local density approximation, Refractive index, Complex dielectric functions, Dielectric coefficient, Exchange correlations, First-principles investigations, Imaginary parts, Impurity atoms

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1016/j.ijleo.2017.08.056; 304026; http://hdl.handle.net/11693/37382

الاتاحة: http://hdl.handle.net/11693/37382
https://doi.org/10.1016/j.ijleo.2017.08.056

المؤلفون: Kutlu E., Narin P., Atmaca G., Sarikavak-Lisesivdin B., Lisesivdin S.B., Özbay E.

المصدر: Materials Research Bulletin

مصطلحات موضوعية: A. Electronic materials, A. Optical materials, B. Optical properties, D. Dielectric properties, D. Electrical properties, Crystal atomic structure, Crystal impurities, Crystal structure, Density functional theory, Dielectric materials, Dielectric properties, Doping (additives), Gate dielectrics, High electron mobility transistors, Local density approximation, Optical materials, Refractive index, Silicon, Structural properties, Absorption co-efficient, Electrical and optical properties, Electronic band structure, Electronic materials, Extinction coefficients, High electron mobility transistor (HEMTs), Optical characteristics, Static dielectric constants, Optical properties

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1016/j.materresbull.2016.05.017; 255408; http://hdl.handle.net/11693/36812

الاتاحة: http://hdl.handle.net/11693/36812
https://doi.org/10.1016/j.materresbull.2016.05.017

المؤلفون: Narin P., Kutlu E., Sarikavak-Lisesivdin B., Lisesivdin S.B., Özbay E.

المصدر: Physica E: Low-Dimensional Systems and Nanostructures

مصطلحات موضوعية: DFT, Doping, Electronic properties, Nanoribbon, Atoms, Crystal atomic structure, Crystal structure, Density functional theory, Doping (additives), Graphene, Nanoribbons, Semiconductor doping, Structural properties, Exchange correlations, Generalized gradient approximations, Half metals, Metallic behaviors, Semiconductor behavior, Spin-polarized, Zigzag graphene nanoribbons, Lithium

Relation: http://dx.doi.org/10.1016/j.physe.2016.06.018; http://hdl.handle.net/11693/36785

الاتاحة: http://hdl.handle.net/11693/36785
https://doi.org/10.1016/j.physe.2016.06.018

المؤلفون: Atmaca, G., Ardali, S., Narin, P., Kutlu, E., Lisesivdin, S.B., Malin, T., Mansurov, V., Zhuravlev, K., Tiras, E.

المساهمون: TUBITAK

المصدر: Journal of Alloys and Compounds ; volume 659, page 90-94 ; ISSN 0925-8388

الاتاحة: http://dx.doi.org/10.1016/j.jallcom.2015.11.056
https://api.elsevier.com/content/article/PII:S0925838815316121?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0925838815316121?httpAccept=text/plain

المؤلفون: Atmaca, G., Narin, P., Sarikavak-Lisesivdin, B., Lisesivdin, S.B.

المساهمون: TUBITAK

المصدر: Physica E: Low-dimensional Systems and Nanostructures ; volume 79, page 67-71 ; ISSN 1386-9477

الاتاحة: http://dx.doi.org/10.1016/j.physe.2015.12.010
https://api.elsevier.com/content/article/PII:S1386947715303167?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S1386947715303167?httpAccept=text/plain

المؤلفون: Atmaca, G., Ardali, S., Tiras, E., Malin, T., Mansurov, V.G., Zhuravlev, K.S., Lisesivdin, S.B.

المساهمون: TUBITAK, RFBR

المصدر: Solid-State Electronics ; volume 118, page 12-17 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2016.01.006
https://api.elsevier.com/content/article/PII:S0038110116000071?httpAccept=text/plain
https://api.elsevier.com/content/article/PII:S0038110116000071?httpAccept=text/xml

المؤلفون: Sarikavak-Lisesivdin, B., Lisesivdin, S.B., Balkan, N., Atmaca G., Narin P., Cakmak H., Ozbay, E.

المصدر: Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science

مصطلحات موضوعية: Electron energy levels, Electrons, High electron mobility transistors, Inelastic scattering, Semiconducting indium compounds, Semiconductor quantum wells, Electron energies, Energy relaxation, Inelastic scattering rate, InGaN quantum wells, N-channel, Non-equilibrium electrons, Power-losses, Theoretical values, Electron temperature

وصف الملف: application/pdf

Relation: http://dx.doi.org/10.1007/s11661-015-2762-2; http://hdl.handle.net/11693/24148

الاتاحة: http://hdl.handle.net/11693/24148
https://doi.org/10.1007/s11661-015-2762-2