المؤلفون: Jyi-Tsong Lin, Chia-Yo Kuo

المصدر: Discover Nano, Vol 19, Iss 1, Pp 1-16 (2024)

مصطلحات موضوعية: Nanosheet induced tunnel field-effect transistor (NS iTFET), Subthreshold swing (SS), Line tunneling, Band-to-band tunneling (BTBT), SiGe, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/ca4285b817004358a4840b5846b41cd2

المؤلفون: Zahra Ahangari

المصدر: Iranian Journal of Electrical and Electronic Engineering, Vol 20, Iss 2, Pp 11-19 (2024)

مصطلحات موضوعية: band to band tunneling. gate workfunction, heterojnction, line tunneling, tunnel field effect transistor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: http://ijeee.iust.ac.ir/article-1-2955-en.pdf; https://doaj.org/toc/1735-2827; https://doaj.org/toc/2383-3890

URL الوصول: https://doaj.org/article/eacf52f5fcc54313864e48492aec76b7

المؤلفون: Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen

المصدر: Tạp chí Khoa học Đại học Đà Lạt, Vol 14, Iss 3S (2024)

مصطلحات موضوعية: Band-to-band tunneling, Channel-buried oxide, Doping pocket, Line tunneling, Low bandgap TFET., Science, Social Sciences

وصف الملف: electronic resource

Relation: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313; https://doaj.org/toc/0866-787X

URL الوصول: https://doaj.org/article/365b821bbd59401e8682f4d8ecb5bef9

المؤلفون: Jyi-Tsong Lin, Kuan-Pin Lin, Kai-Ming Cheng

المصدر: Discover Nano, Vol 18, Iss 1, Pp 1-13 (2023)

مصطلحات موضوعية: TFET, Line-tunneling, Schottky contact, Without ion implantation, Low subthreshold swing, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/17124147061c49a2afb618929d7d8366

المؤلفون: Jyi-Tsong Lin, Yen-Chen Chang

المصدر: Discover Nano, Vol 18, Iss 1, Pp 1-13 (2023)

مصطلحات موضوعية: Tunneling effect, Subthreshold swing, Schottky contact, Fermi level pinning, Line tunneling, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/56c36a9c47c547b19cd5db666af961a0

المؤلفون: Jyi-Tsong Lin, Shao-Cheng Weng

المصدر: Discover Nano, Vol 18, Iss 1, Pp 1-13 (2023)

مصطلحات موضوعية: Control gate (CG), Tunnel FET (TFET), Subthreshold swing, Schottky contact, Line tunneling, Band-to-band tunneling (BTBT), Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2731-9229

URL الوصول: https://doaj.org/article/145d5182cc2f451e94130ee3ea4cac49

المؤلفون: Bui, Huu Thai, Shih, Chun-Hsing, Nguyen, Dang Chien, Nguyễn, Đăng Chiến

المصدر: Dalat University Journal of Science; Volume 14, Issue 3S (2024): Natural Sciences and Technology; 61-75 ; Tạp chí Khoa học Đại học Đà Lạt; Tập 14, Số 3S (2024): Chuyên san Khoa học Tự nhiên và Công nghệ; 61-75 ; 0866-787X

مصطلحات موضوعية: Band-to-band tunneling, Channel-buried oxide, Doping pocket, Line tunneling, Low bandgap TFET

وصف الملف: application/pdf

Relation: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313/558; https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313

الاتاحة: https://tckh.dlu.edu.vn/index.php/tckhdhdl/article/view/1313

المؤلفون: Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang, Yao Li

المصدر: Micromachines, Vol 14, Iss 11, p 2049 (2023)

مصطلحات موضوعية: tunnel field effect transistor, line tunneling, P+-pocket, InGaAs/InAlAs, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/11/2049; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/71a5a8dc7bf147f2ae0e62f588236862

المؤلفون: Hyun Woo Kim, Daewoong Kwon

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 286-294 (2021)

مصطلحات موضوعية: Band-to-band tunneling (BTBT), vertical tunnel field-effect transistor (vertical tunnel FET), ternary inverter, subthreshold swing (SS), ternary CMOS (T-CMOS), line tunneling, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9348907/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/6e42a881d0ff43ed92551f2d980f812f

المؤلفون: Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Haiwu Xie, Chen Chong

المصدر: Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)

مصطلحات موضوعية: Tunnel FET, Dopingless, Fin-shaped channel, Line tunneling junction, Stack gate oxide, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://link.springer.com/article/10.1186/s11671-020-03429-3; https://doaj.org/toc/1556-276X

URL الوصول: https://doaj.org/article/c03f7e33a6b34d82a6eb9af273b42cc8

المؤلفون: Hu Liu, Wenting Zhang, Zaixing Wang, Yao Li, Huawei Zhang

المصدر: Materials; Volume 15; Issue 19; Pages: 6924

مصطلحات موضوعية: tunnel field-effect transistor, OFF-state leakage suppression, electron–hole bilayer, line tunneling

وصف الملف: application/pdf

Relation: Electronic Materials; https://dx.doi.org/10.3390/ma15196924

الاتاحة: https://doi.org/10.3390/ma15196924

المؤلفون: Weijun Cheng, Renrong Liang, Gaobo Xu, Guofang Yu, Shuqin Zhang, Huaxiang Yin, Chao Zhao, Tian-Ling Ren, Jun Xu

المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 336-340 (2020)

مصطلحات موضوعية: TFET Ge PAI, line tunneling, cryogenic temperature, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9042826/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/bf9362598c5f483782496368669f36c4

المؤلفون: Woojin Park, Amir N. Hanna, Arwa T. Kutbee, Muhammad Mustafa Hussain

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 721-725 (2018)

مصطلحات موضوعية: TFET, in-line tunneling, silicon, vertical structure, tunneling distance, tunneling probability, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8372468/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/1fcf9f81de8b4304b572abe9e3e7d27f

المؤلفون: Faraz Najam, Yun Seop Yu

المصدر: Applied Sciences; Volume 10; Issue 13; Pages: 4475

مصطلحات موضوعية: tunneling field-effect-transistor, trap-assisted-tunneling, Schenk model, line tunneling

جغرافية الموضوع: agris

وصف الملف: application/pdf

Relation: Electrical, Electronics and Communications Engineering; https://dx.doi.org/10.3390/app10134475

الاتاحة: https://doi.org/10.3390/app10134475

المؤلفون: Seunghyun Yun, Jeongmin Oh, Seokjung Kang, Yoon Kim, Jang Hyun Kim, Garam Kim, Sangwan Kim

المصدر: Micromachines; Volume 10; Issue 11; Pages: 760

مصطلحات موضوعية: band-to-band tunneling, tunnel field-effect transistor (TFET), L-shaped TFET, line tunneling, electric field crowding, corner effect

وصف الملف: application/pdf

Relation: A：Physics; https://dx.doi.org/10.3390/mi10110760

الاتاحة: https://doi.org/10.3390/mi10110760

المؤلفون: Hu Liu, Wenting Zhang, Zaixing Wang, Yao Li, Huawei Zhang

المصدر: Materials; Volume 15; Issue 19; Pages: 6924

مصطلحات موضوعية: General Materials Science, tunnel field-effect transistor, OFF-state leakage suppression, electron–hole bilayer, line tunneling

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::536fb4a2cf6316d904df69a83c3e98a8
https://pubmed.ncbi.nlm.nih.gov/36234264

المؤلفون: Daewoong Kwon, Hyun Woo Kim

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 286-294 (2021)

مصطلحات موضوعية: Materials science, Gate dielectric, subthreshold swing (SS), 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, ternary inverter, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, Quantum tunnelling, 010302 applied physics, Condensed matter physics, 020208 electrical & electronic engineering, vertical tunnel field-effect transistor (vertical tunnel FET), Band-to-band tunneling (BTBT), Tunnel field-effect transistor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic, Optical and Magnetic Materials, CMOS, Logic gate, ComputingMethodologies_DOCUMENTANDTEXTPROCESSING, Inverter, line tunneling, lcsh:Electrical engineering. Electronics. Nuclear engineering, Ternary operation, lcsh:TK1-9971, ternary CMOS (T-CMOS), Biotechnology, Voltage, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb2bd57a6531a5ed8fed3c15b8d91179
https://ieeexplore.ieee.org/document/9348907/

المؤلفون: Cheng, Qi, Khandelwal, Sourabh, Zeng, Yuping

مصطلحات موضوعية: Band-to-band tunneling, compact model, line tunneling, tunneling FET

وصف الملف: application/pdf

Relation: Q. Cheng, S. Khandelwal and Y. Zeng, "A Physically-Based Model of Vertical TFET--Part II: Drain Current Model," in IEEE Transactions on Electron Devices, doi:10.1109/TED.2022.3146091.; https://udspace.udel.edu/handle/19716/30711

الاتاحة: https://udspace.udel.edu/handle/19716/30711

المؤلفون: Cheng, Qi, Khandelwal, Sourabh, Zeng, Yuping

مصطلحات موضوعية: Compact model, line tunneling, Poisson's equation, vertical TFET

وصف الملف: application/pdf

Relation: Q. Cheng, S. Khandelwal and Y. Zeng, "A Physics-Based Model of Vertical TFET--Part I: Modeling of Electric Potential," in IEEE Transactions on Electron Devices, doi:10.1109/TED.2022.3172929.; https://udspace.udel.edu/handle/19716/30985

الاتاحة: https://udspace.udel.edu/handle/19716/30985

المؤلفون: Shuqin Zhang, Guofang Yu, Chao Zhao, Renrong Liang, Huaxiang Yin, Weijun Cheng, Gaobo Xu, Jun Xu, Tian-Ling Ren

المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 336-340 (2020)

مصطلحات موضوعية: Fabrication, Materials science, Silicon, Annealing (metallurgy), Transconductance, chemistry.chemical_element, Germanium, 02 engineering and technology, 01 natural sciences, 0103 physical sciences, Electrical and Electronic Engineering, Drain current, Cryogenic temperature, Quantum tunnelling, 010302 applied physics, business.industry, cryogenic temperature, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, chemistry, TFET Ge PAI, Optoelectronics, line tunneling, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:TK1-9971, Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aac59cef5705997c0a897c9b01b5aa4b
https://ieeexplore.ieee.org/document/9042826/