المؤلفون: Lindquist, Miles T.

مصطلحات موضوعية: Physics, Materials Science, MoS2, 2D Materials, semiconductor

الاتاحة: http://rave.ohiolink.edu/etdc/view?acc_num=ouhonors1492781232538674

المؤلفون: Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter

مصطلحات موضوعية: Gallium compounds, MOS devices, Oxide semiconductors, Refractory materials, Refractory metals, Access resistance, DC performance, Implant technology, Low-parasitic, Maximum transconductance, On-resistance, Power switching, Self-aligned gate, Power MOSFET

Time: 530

وصف الملف: application/pdf

الاتاحة: https://oa.tib.eu/renate/handle/123456789/7064
https://doi.org/10.34657/6111

المؤلفون: Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.

المساهمون: Air Force Office of Scientific Research

المصدر: Applied Physics Express ; volume 12, issue 12, page 126501 ; ISSN 1882-0778 1882-0786

الاتاحة: http://dx.doi.org/10.7567/1882-0786/ab4d1c
http://iopscience.iop.org/article/10.7567/1882-0786/ab4d1c
http://iopscience.iop.org/article/10.7567/1882-0786/ab4d1c/pdf
https://iopscience.iop.org/article/10.7567/1882-0786/ab4d1c/pdf
https://iopscience.iop.org/article/10.7567/1882-0786/ab4d1c

المؤلفون: Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

المساهمون: Air Force Office of Scientific Research

المصدر: Semiconductor Science and Technology ; volume 35, issue 1, page 013002 ; ISSN 0268-1242 1361-6641

الاتاحة: http://dx.doi.org/10.1088/1361-6641/ab55fe
http://iopscience.iop.org/article/10.1088/1361-6641/ab55fe
http://iopscience.iop.org/article/10.1088/1361-6641/ab55fe/pdf
https://iopscience.iop.org/article/10.1088/1361-6641/ab55fe/pdf
https://iopscience.iop.org/article/10.1088/1361-6641/ab55fe

المؤلفون: Liddy, Kyle J., Hendricks, Nolan S., Green, Andrew J., Popp, Andreas, Lindquist, Miles T., Leedy, Kevin D., Tetlak, Stephen E., Moser, Neil A., Wagner, Gunter, Chabak, Kelson D., Jessen, Gregg H.

المصدر: 2019 Device Research Conference (DRC)

الاتاحة: http://dx.doi.org/10.1109/drc46940.2019.9046407
http://xplorestaging.ieee.org/ielx7/9038149/9046332/09046407.pdf?arnumber=9046407

المؤلفون: Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.

المصدر: Applied Physics Express (APEX); December 2019, Vol. 12 Issue: 12 p126501-126501, 1p

المؤلفون: Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Gunter, Chabak, Kelson D., Jessen, Gregg H.

المصدر: Applied Physics Express (APEX); December 2019, Vol. 12 Issue: 12 p126501-126501, 1p