المؤلفون: Chen, Yi-Xuan, Wang, Yi-Lin, Li, Fu-Jyuan, Chang, Shu-Jui, Lee, Tsung-En, Cheng, Chao-Ching, Lee, Meng-Chien, Li, Hui-Hsuan, Lin, Yu-Hsien, Chien, Chao-Hsin

المساهمون: Ministry of Science and Technology, Taiwan, Taiwan Semiconductor Research Institute for technical, National Chiao Tung University Nano Facility Center, Taiwan Instrument Research Institute, National Applied Research Laboratories

المصدر: IEEE Transactions on Nanotechnology ; volume 23, page 299-302 ; ISSN 1536-125X 1941-0085

الاتاحة: https://doi.org/10.1109/tnano.2024.3381478
http://xplorestaging.ieee.org/ielx7/7729/10368312/10478822.pdf?arnumber=10478822

المؤلفون: LI, HUI-HSUAN, 李慧萱

Thesis Advisors: LIN, YU-HSIEN, CHIEN, CHAO-HSIN, 林育賢, 簡昭欣

وصف الملف: 73

الاتاحة: http://ndltd.ncl.edu.tw/handle/00833455736248557514

المؤلفون: Chen, Yi-Xuan, Li, Fu-Jyuan, Wang, Yi-Lin, Li, Hui-Hsuan, Lee, Meng-Chien, Lin, Yu-Hsien, Chien, Chao-Hsin

المصدر: 2024 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ; page 1-5

الاتاحة: http://dx.doi.org/10.1109/ipfa61654.2024.10690984
http://xplorestaging.ieee.org/ielx8/10690276/10690850/10690984.pdf?arnumber=10690984

المؤلفون: Chen, Yi-Xuan, Wang, Yi-Lin, Li, Fu-Jyuan, Li, Hui-Hsuan, Lee, Meng-Chien, Lin, Yu-Hsien, Chien, Chao-Hsin

المساهمون: Ministry of Science and Technology, Taiwan, Taiwan Semiconductor Research Institute for technical support, National Chiao Tung University Nano Facility Center, Taiwan Instrument Research Institute, National Applied Research Laboratories

المصدر: IEEE Transactions on Nanotechnology ; volume 23, page 516-520 ; ISSN 1536-125X 1941-0085

الاتاحة: http://dx.doi.org/10.1109/tnano.2024.3413794
http://xplorestaging.ieee.org/ielx8/7729/10368312/10556823.pdf?arnumber=10556823

المؤلفون: Chen, Yi-Xuan, Li, Fu-Jyuan, Wang, Yi-Lin, Lee, Meng-Chien, Li, Hui-Hsuan, Lin, Yu-Hsien, Chien, Chao-Hsin

المساهمون: Ministry of Science and Technology, Taiwan, Taiwan Semiconductor Research Institute, National Chiao Tung University Nano Facility Center, Taiwan Instrument Research Institute, National Applied Research Laboratories

المصدر: IEEE Transactions on Nanotechnology ; volume 23, page 422-426 ; ISSN 1536-125X 1941-0085

الاتاحة: https://doi.org/10.1109/tnano.2024.3396502
http://xplorestaging.ieee.org/ielx7/7729/10368312/10518088.pdf?arnumber=10518088

المؤلفون: Li, Hui-Hsuan, Lin, Kuan-Yu, Tsai, Yi-He, Lin, Yu-Hsien, Chien, Chao-Hsin

المصدر: IEEE Transactions on Electron Devices; 2024, Vol. 71 Issue: 3 p2030-2035, 6p

المؤلفون: Li, Hui-Hsuan, Lin, Yu-Ru, Wu, Yung-Chun, Lin, Yu-Hsien, Yu, Jia-Jyun

المصدر: 2018 7th International Symposium on Next Generation Electronics (ISNE) ; page 1-3

الاتاحة: http://dx.doi.org/10.1109/isne.2018.8394662
http://xplorestaging.ieee.org/ielx7/8385418/8393497/08394662.pdf?arnumber=8394662

المؤلفون: Tsai, Yi-He, Chou, Chen-Han, Li, Hui-Hsuan, Yeh, Wen-Kuan, Lin, Yu-Hsien, Ko, Fu-Hsiang, Chien, Chao-Hsin

المصدر: Journal of Nanoscience and Nanotechnology ; volume 19, issue 8, page 4529-4534 ; ISSN 1533-4880

الاتاحة: http://dx.doi.org/10.1166/jnn.2019.16494
https://www.ingentaconnect.com/content/asp/jnn/2019/00000019/00000008/art00019

المؤلفون: Li, Hui-Hsuan, Tsai, Yi-He, Lin, Yu-Hsien, Chien, Chao-Hsin

المصدر: IEEE Electron Device Letters; Aug2021, Vol. 42 Issue 8, p1109-1111, 3p

مصطلحات موضوعية: ATOMIC layer deposition, INDIUM gallium zinc oxide, THERMAL stability, HOLE mobility, X-ray photoelectron spectroscopy, STRAY currents

المؤلفون: Li, Hui-Hsuan, Chen, Shang-Chiun, Lin, Yu-Hsien, Chien, Chao-Hsin

المصدر: ECS Journal of Solid State Science and Technology; May 2024, Vol. 13 Issue: 5 p055001-055001, 1p

المؤلفون: Li, Hui-Hsuan, Chen, Shang-Chiun, Lin, Yu-Hsien, Chien, Chao-Hsin

المصدر: ECS Journal of Solid State Science and Technology; May 2024, Vol. 13 Issue: 5 p053008-053008, 1p