يعرض 1 - 20 نتائج من 42 نتيجة بحث عن '"Li, E. H."', وقت الاستعلام: 0.63s تنقيح النتائج
  1. 1
    Academic Journal
  2. 2
    Academic Journal
  3. 3
    Academic Journal

    المساهمون: Alahuhta, J., Kosten, S., Akasaka, M., Auderset, D., Azzella, M. M., Bolpagni, R., Bove, C. P., Chambers, P. A., Chappuis, E., Clayton, J., de Winton, M., Ecke, F., Gacia, E., Gecheva, G., Grillas, P., Hauxwell, J., Hellsten, S., Hjort, J., Hoyer, M. V., Ilg, C., Kolada, A., Kuoppala, M., Lauridsen, T., Li, E. H., Lukacs, B. A., Mjelde, M., Mikulyuk, A., Mormul, R. P., Nishihiro, J., Oertli, B., Rhazi, L., Rhazi, M., Sass, L., Schranz, C., Sondergaard, M., Yamanouchi, T., Yu, Q., Wang, H., Willby, N., Zhang, X. K., Heino, J.

    Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000406117000008; volume:44; issue:8; firstpage:1758; lastpage:1769; numberofpages:12; journal:JOURNAL OF BIOGEOGRAPHY; http://hdl.handle.net/11573/1641136; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85013957441

  4. 4
  5. 5
    Academic Journal

    المصدر: Journal of Applied Physics; 2/1/1998, Vol. 83 Issue 3, p1305, 7p, 1 Diagram, 2 Charts, 8 Graphs

    مصطلحات موضوعية: QUANTUM wells, ELECTROLYTIC oxidation

  6. 6
    Conference
  7. 7
    Conference
  8. 8
    Conference
  9. 9
    Conference

    المساهمون: L Faraone, JM Dell, TA Fisher, CA Musca, BD Nener

    Relation: orcid:0000-0002-4615-2240

  10. 10
    Conference
  11. 11
    Conference
  12. 12
    Academic Journal
  13. 13
    Academic Journal
  14. 14
    Academic Journal

    المؤلفون: Djurisic, A B, Li, E H

    المصدر: Semiconductor Science and Technology ; volume 14, issue 11, page 958-960 ; ISSN 0268-1242 1361-6641

  15. 15
    Academic Journal

    Relation: Choy, W C H, Hughes, P J, Weiss, B L, Li, E H, Hong, K and Pavlidis, D (1998) The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures. Applied Physics Letters, 72 (3). pp. 338-340. ISSN 0003-6951

  16. 16
    Academic Journal

    المساهمون: Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, School of Electronic Engineering, Information Technology and Mathematics, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom, Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong

    مصطلحات موضوعية: Physics, Science

    وصف الملف: 3102 bytes; 70085 bytes; text/plain; application/pdf

    Relation: Choy, W. C. H.; Hughes, P. J.; Weiss, B. L.; Li, E. H.; Hong, K.; Pavlidis, D. (1998). "The effect of growth interruption on the properties of InGaAs/InAlAs quantum well structures." Applied Physics Letters 72(3): 338-340.; https://hdl.handle.net/2027.42/69600; Applied Physics Letters; M. A. Herman, D. Bimberg, and J. Christen, J. Appl. Phys. JAPIAU70, R1 (1991).; P. M. Young and H. Ehrenreich, Appl. Phys. Lett. APPLAB61, 1069 (1992).; H. Qiang, F. H. Pollak, Y.-S. Huang, W. S. Chi, R. Droopad, D. L. Mathine, and G. N. Maracas, Proc. SPIE PSISDG2139, 11 (1995).; P. J. Hughes, T. J. C. Hosea, and B. L. Weiss, Semicond. Sci. Technol. SSTEET10, 1339 (1995).; G. Bastard and J. A. Brum, IEEE J. Quantum Electron. IEJQA722, 113 (1987).; D. J. BenDaniel and C. B. Duke, Phys. Rev. PHRVAO152, 683 (1966).; T. Ishikawa and J. E. Bowers. IEEE J. Quantum Electron. IEJQA730, 562 (1994).; H. Nagai, S. Adachi, and T. Fukui, III–V Group Mixed Crystals, (Corona, Tokyo, 1990).; S. Monéger, Y. Baltagi, T. Benyattou, A. Tabata, B. Ragot, G. Guillot, A. Georgakilas, K. Zekentes, and G. Halkias, J. Appl. Phys. JAPIAU74, 1437 (1993).; P. J. Hughes, B. L. Weiss, and T. J. C. Hosea, J. Appl. Phys. JAPIAU77, 6472 (1995).

  17. 17
    Academic Journal
  18. 18
    Academic Journal
  19. 19
    Academic Journal
  20. 20
    Academic Journal