يعرض 1 - 20 نتائج من 66 نتيجة بحث عن '"Levade, C."', وقت الاستعلام: 0.60s تنقيح النتائج
  1. 1
    Book
    Defect dynamics in ZnSe/GaAs (001) epilayers: TEM in-situ heating experiments

    المؤلفون: Lavagne, S, Levade, C, Vanderschaeve, G

    المصدر: Microscopy of Semiconducting Materials 2001 ; page 219-224 ; ISBN 9781351074629

    الاتاحة: http://dx.doi.org/10.1201/9781351074629-46

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  2. 2
    Academic Journal
    Crystal polarity of sphalerite semiconductor compounds, as determined by convergent-beam electron diffraction experiments on plan-view (001) samples: application to ZnSe crystals

    المؤلفون: Lavagne, S., Roucau, C., Levade, C., Vanderschaeve, G.

    المصدر: Philosophical Magazine A ; volume 82, issue 8, page 1451-1462 ; ISSN 0141-8610 1460-6992

    الاتاحة: https://doi.org/10.1080/01418610110109098

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  3. 3
    Academic Journal
    A TEM in situ investigation of dislocation mobility in the II-VI semiconductor compound ZnS A quantitative study of the cathodoplastic effect

    المؤلفون: Levade, C., Faress, A., Vanderschaeve, G.

    المصدر: Philosophical Magazine A ; volume 69, issue 5, page 855-870 ; ISSN 0141-8610

    الاتاحة: https://doi.org/10.1080/01418619408242524
    http://www.tandfonline.com/doi/pdf/10.1080/01418619408242524

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  4. 4
    Academic Journal
    TEMin situinvestigation of dislocation mobility in II-VI semiconductor compound ZnS cathodoplastic effect and the Peierls mechanism

    المؤلفون: Faress, A., Levade, C., Vanderschaeve, G.

    المصدر: Philosophical Magazine A ; volume 68, issue 1, page 97-112 ; ISSN 0141-8610 1460-6992

    الاتاحة: https://doi.org/10.1080/01418619308219359
    http://www.tandfonline.com/doi/pdf/10.1080/01418619308219359

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  5. 5
    Academic Journal
    EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS

    المؤلفون: Vanderschaeve, G., Levade, C., Faress, A., Couderc, J., Caillard, Daniel

    المصدر: ISSN: 1155-4339.

    مصطلحات موضوعية: [PHYS.HIST]Physics [physics]/Physics archives

    Relation: jpa-00250732; https://hal.archives-ouvertes.fr/jpa-00250732; https://hal.archives-ouvertes.fr/jpa-00250732/document; https://hal.archives-ouvertes.fr/jpa-00250732/file/ajp-jp4199101C646.pdf

    الاتاحة: https://hal.archives-ouvertes.fr/jpa-00250732
    https://hal.archives-ouvertes.fr/jpa-00250732/document
    https://hal.archives-ouvertes.fr/jpa-00250732/file/ajp-jp4199101C646.pdf
    https://doi.org/10.1051/jp4:1991646

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  6. 6
    Academic Journal
    Effet photoplastique dans ZnS de structure blende entre 300 et 620 K

    المؤلفون: Couderc, J.J., Levade, C., Kara, A.

    المصدر: ISSN: 0035-1687.

    مصطلحات موضوعية: II VI semiconductors, photoplasticity, plastic flow, slip, transmission electron microscope examination of materials, zinc compounds, deformation, semiconductor, sphalerite, single crystals, photoplastic effect, hardening, yielding, TEM, flow stress, activation volume, dislocation glide, activation enthalpy, Peierls barrier, 300 to 620 K, ZnS, [PHYS.HIST]Physics [physics]/Physics archives

    Relation: jpa-00246283; https://hal.archives-ouvertes.fr/jpa-00246283; https://hal.archives-ouvertes.fr/jpa-00246283/document; https://hal.archives-ouvertes.fr/jpa-00246283/file/ajp-rphysap_1990_25_11_1129_0.pdf

    الاتاحة: https://hal.archives-ouvertes.fr/jpa-00246283
    https://hal.archives-ouvertes.fr/jpa-00246283/document
    https://hal.archives-ouvertes.fr/jpa-00246283/file/ajp-rphysap_1990_25_11_1129_0.pdf
    https://doi.org/10.1051/rphysap:0199000250110112900

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  7. 7
    Academic Journal
    Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue

    المؤلفون: Martineau, D., Mazeaud, T., Legros, M., Dupuy, Ph., Levade, C.

    المصدر: Microelectronics Reliability ; volume 50, issue 9-11, page 1768-1772 ; ISSN 0026-2714

    الاتاحة: http://dx.doi.org/10.1016/j.microrel.2010.07.065
    https://api.elsevier.com/content/article/PII:S0026271410003380?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S0026271410003380?httpAccept=text/plain

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  8. 8
    Academic Journal
    Alterations induced in the structure of intelligent power devices by extreme electro‐thermal fatigue

    المؤلفون: Khong, B., Legros, M., Dupuy, P., Levade, C., Vanderschaeve, G.

    المصدر: physica status solidi c ; volume 4, issue 8, page 2997-3001 ; ISSN 1862-6351 1610-1642

    الاتاحة: http://dx.doi.org/10.1002/pssc.200675492
    https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssc.200675492
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200675492

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  9. 9
    Academic Journal
    Sources of misfit dislocations in ZnSe/GaAs (001) heterostructures

    المؤلفون: Lavagne, S., Levade, C., Vanderschaeve, G.

    المصدر: physica status solidi c ; volume 4, issue 8, page 3015-3019 ; ISSN 1862-6351 1610-1642

    الاتاحة: http://dx.doi.org/10.1002/pssc.200675493
    https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssc.200675493
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200675493

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  10. 10
    Academic Journal
    Characterization and modelling of ageing failures on power MOSFET devices

    المؤلفون: Khong, B., Legros, M., Tounsi, P., Dupuy, Ph., Chauffleur, X., Levade, C., Vanderschaeve, G., Scheid, E.

    المصدر: Microelectronics Reliability ; volume 47, issue 9-11, page 1735-1740 ; ISSN 0026-2714

    الاتاحة: http://dx.doi.org/10.1016/j.microrel.2007.07.055
    https://api.elsevier.com/content/article/PII:S0026271407003411?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S0026271407003411?httpAccept=text/plain

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  11. 11
    Academic Journal
    Transmission electron microscopyin situinvestigation of dislocation behaviour in semiconductors and the influence of electronic excitation

    المؤلفون: Lavagne§, S., Levade, C., Vanderschaeve, G.

    المصدر: Philosophical Magazine ; volume 86, issue 29-31, page 4923-4940 ; ISSN 1478-6435 1478-6443

    الاتاحة: http://dx.doi.org/10.1080/14786430600750038
    http://www.tandfonline.com/doi/pdf/10.1080/14786430600750038

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  12. 12
    Academic Journal
    TEM in situ study of degradation mechanisms induced by temperature annealing and electron beam irradiation in a ZnSe/GaAs heterostructure

    المؤلفون: Lavagne, S., Levade, C., Vanderschaeve, G.

    المصدر: Materials Science and Engineering: B ; volume 128, issue 1-3, page 1-6 ; ISSN 0921-5107

    الاتاحة: http://dx.doi.org/10.1016/j.mseb.2005.07.023
    https://api.elsevier.com/content/article/PII:S0921510705004125?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S0921510705004125?httpAccept=text/plain

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  13. 13
    Academic Journal
    Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue

    المؤلفون: Khong, B., Tounsi, P., Dupuy, Ph., Chauffleur, X., Legros, M, Deram, A., Levade, C., Vanderschaeve, G., Dorkel, J.-M., Fradin, J.-P.

    المصدر: Microelectronics Reliability ; volume 45, issue 9-11, page 1717-1722 ; ISSN 0026-2714

    الاتاحة: http://dx.doi.org/10.1016/j.microrel.2005.07.104
    https://api.elsevier.com/content/article/PII:S0026271405002349?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:S0026271405002349?httpAccept=text/plain

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  14. 14
    Academic Journal
    310 misfit dislocations in ZnSe/GaAs(001) heterostructure

    المؤلفون: Lavagne, S, Levade, C, Vanderschaeve, G

    المصدر: Journal of Physics: Condensed Matter ; volume 14, issue 48, page 13291-13298 ; ISSN 0953-8984

    الاتاحة: http://dx.doi.org/10.1088/0953-8984/14/48/380
    http://stacks.iop.org/0953-8984/14/i=48/a=380/pdf

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  15. 15
    Academic Journal
    Dislocation mobility and electronic effects in semiconductor compounds

    المؤلفون: Vanderschaeve, G., Levade, C., Caillard, D.

    المصدر: Journal of Microscopy ; volume 203, issue 1, page 72-83 ; ISSN 0022-2720 1365-2818

    الاتاحة: http://dx.doi.org/10.1046/j.1365-2818.2001.00901.x
    https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1046%2Fj.1365-2818.2001.00901.x
    https://onlinelibrary.wiley.com/doi/pdf/10.1046/j.1365-2818.2001.00901.x

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  16. 16
    Academic Journal
    Vickers indentation on the {001} faces of GaAs under infrared illumination and in darkness

    المؤلفون: Koubaïti, S., Levade, C., Vanderschaeve, G., Couderc, J. J.

    المصدر: Philosophical Magazine A ; volume 80, issue 1, page 83-104 ; ISSN 0141-8610 1460-6992

    الاتاحة: http://dx.doi.org/10.1080/01418610008212042
    http://www.tandfonline.com/doi/pdf/10.1080/01418610008212042

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  17. 17
    Academic Journal
    A TEM study of slip lines in power MOS devices

    المؤلفون: Rivière-Jérôme, A, Levade, C, Vanderschaeve, G, Percheron-Garçon, I, Forgerit, B

    المصدر: Journal of Physics: Condensed Matter ; volume 12, issue 49, page 10279-10286 ; ISSN 0953-8984 1361-648X

    الاتاحة: http://dx.doi.org/10.1088/0953-8984/12/49/329

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  18. 18
    Academic Journal
    Transmission electron microscopyin situinvestigation of dislocation mobility in semiconductors

    المؤلفون: Vanderschaeve, G, Levade, C, Caillard, D

    المصدر: Journal of Physics: Condensed Matter ; volume 12, issue 49, page 10093-10103 ; ISSN 0953-8984 1361-648X

    الاتاحة: http://dx.doi.org/10.1088/0953-8984/12/49/309

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  19. 19
    Academic Journal
    Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers

    المؤلفون: Lavagne, S, Levade, C, Vanderschaeve, G, Crestou, J, Tournié, E, Faurie, J P

    المصدر: Journal of Physics: Condensed Matter ; volume 12, issue 49, page 10287-10293 ; ISSN 0953-8984 1361-648X

    الاتاحة: http://dx.doi.org/10.1088/0953-8984/12/49/330

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  20. 20
    Academic Journal
    Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry

    المؤلفون: Levade, C., Vanderschaeve, G.

    المصدر: physica status solidi (a) ; volume 171, issue 1, page 83-88 ; ISSN 0031-8965 1521-396X

    الاتاحة: http://dx.doi.org/10.1002/(sici)1521-396x(199901)171:1%3C83::aid-pssa83%3E3.0.co%3B2-c
    https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2F(SICI)1521-396X(199901)171:1%3C83::AID-PSSA83%3E3.0.CO%3B2-C
    https://onlinelibrary.wiley.com/doi/full/10.1002/(SICI)1521-396X(199901)171:1%3C83::AID-PSSA83%3E3.0.CO%3B2-C

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