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1Academic Journal
المؤلفون: Department of Materials Science and Engineering, Rhines Hall, University of Florida, Gainesville, FL 32606, USA ( host institution ), Overberg, Mark ( author ), Lee, K.N. ( author ), Abernathy, Cammy R. ( author ), Pearton, Stephen J. ( author ), Hobson, W.S. ( author ), Wilson, Robert G. ( author ), Zavada, John M. ( author )
مصطلحات موضوعية: GaN, Europium doping, Annealing
وصف الملف: Pages 150-152
Relation: Materials Science & Engineering B; S0921-5107(00)00705-4; MSB; 3938; http://ufdc.ufl.edu/LS00523007/00001
الاتاحة: https://doi.org/10.1016/S0921-5107(00)00705-4
http://ufdc.ufl.edu/LS00523007/00001 -
2Academic Journal
المؤلفون: Department of Materials Science and Engineering, University of Florida, PO BOX 116400 Rhines Hall, Gainesville, FL 32611, USA ( host institution ), Lee, K.N ( author ), Cao, X.A ( author ), Abernathy, C.R ( author ), Pearton, S.J ( author ), Zhang, A.P ( author ), Ren, F ( author ), Hickman, R ( author ), Van Hove, J.M ( author )
مصطلحات موضوعية: GaN, Schottky diode, Annealing thermal damage, I– V ozone/HCl treatment
وصف الملف: Pages 1203-1208
Relation: Solid State Electronics; S0038-1101(00)00041-1; SSE; 2417; http://ufdc.ufl.edu/LS00509515/00001
الاتاحة: https://doi.org/10.1016/S0038-1101(00)00041-1
http://ufdc.ufl.edu/LS00509515/00001 -
3Academic Journal
المؤلفون: Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, U.S.A. ( host institution ), Lee, K.N ( author ), Lee, J.W ( author ), Abernathy, C.R ( author ), Pearton, S.J ( author ), Hobson, W.S ( author ), Ren, F ( author )
وصف الملف: Pages 401-404
Relation: Solid State Electronics; S0038-1101(97)86516-1; SSE; http://ufdc.ufl.edu/LS00509471/00001
الاتاحة: https://doi.org/10.1016/S0038-1101(97)86516-1
http://ufdc.ufl.edu/LS00509471/00001