المؤلفون: Lavagne, S, Levade, C, Vanderschaeve, G

المصدر: Microscopy of Semiconducting Materials 2001 ; page 219-224 ; ISBN 9781351074629

الاتاحة: http://dx.doi.org/10.1201/9781351074629-46

المؤلفون: Lavagne, S., Roucau, C., Levade, C., Vanderschaeve, G.

المصدر: Philosophical Magazine A ; volume 82, issue 8, page 1451-1462 ; ISSN 0141-8610 1460-6992

الاتاحة: https://doi.org/10.1080/01418610110109098

المؤلفون: Lavagne, S., Levade, C., Vanderschaeve, G.

المصدر: physica status solidi c ; volume 4, issue 8, page 3015-3019 ; ISSN 1862-6351 1610-1642

الاتاحة: http://dx.doi.org/10.1002/pssc.200675493
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssc.200675493
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200675493

المؤلفون: Lavagne§, S., Levade, C., Vanderschaeve, G.

المصدر: Philosophical Magazine ; volume 86, issue 29-31, page 4923-4940 ; ISSN 1478-6435 1478-6443

الاتاحة: http://dx.doi.org/10.1080/14786430600750038
http://www.tandfonline.com/doi/pdf/10.1080/14786430600750038

المؤلفون: Lavagne, S., Levade, C., Vanderschaeve, G.

المصدر: Materials Science and Engineering: B ; volume 128, issue 1-3, page 1-6 ; ISSN 0921-5107

الاتاحة: http://dx.doi.org/10.1016/j.mseb.2005.07.023
https://api.elsevier.com/content/article/PII:S0921510705004125?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0921510705004125?httpAccept=text/plain

المؤلفون: Albarède, Paul-Henri, Lavagne, S., Grosjean, C.

المصدر: Microelectronics Reliability ; volume 43, issue 9-11, page 1693-1698 ; ISSN 0026-2714

الاتاحة: http://dx.doi.org/10.1016/s0026-2714(03)00336-6
https://api.elsevier.com/content/article/PII:S0026271403003366?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0026271403003366?httpAccept=text/plain

المؤلفون: Lavagne, S, Levade, C, Vanderschaeve, G

المصدر: Journal of Physics: Condensed Matter ; volume 14, issue 48, page 13291-13298 ; ISSN 0953-8984

الاتاحة: http://dx.doi.org/10.1088/0953-8984/14/48/380
http://stacks.iop.org/0953-8984/14/i=48/a=380/pdf

المؤلفون: Lavagne, S, Levade, C, Vanderschaeve, G, Crestou, J, Tournié, E, Faurie, J P

المصدر: Journal of Physics: Condensed Matter ; volume 12, issue 49, page 10287-10293 ; ISSN 0953-8984 1361-648X

الاتاحة: http://dx.doi.org/10.1088/0953-8984/12/49/330

المؤلفون: Lavagne§, S., Levade, C., Vanderschaeve, G.

المصدر: Philosophical Magazine; 10/11/2006-11/1/2006, Vol. 86 Issue 29-31, p4923-4940, 17p, 8 Diagrams, 1 Chart, 1 Graph

مصطلحات موضوعية: TRANSMISSION electron microscopy, DISLOCATIONS in metals, SEMICONDUCTORS, ELECTRONIC excitation, CRYSTAL lattices, IRRADIATION