يعرض 1 - 20 نتائج من 31 نتيجة بحث عن '"Laska, T."', وقت الاستعلام: 0.38s تنقيح النتائج
  1. 1
    Conference
    Long Term Stability and Drift Phenomena of different Trench IGBT Structures under Repetitive Switching Tests

    المؤلفون: Laska, T., Hille, F., Pfirsch, F., Jereb, R., Bassler, M.

    المصدر: Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

    الاتاحة: http://dx.doi.org/10.1109/ispsd.2007.4294917
    http://xplorestaging.ieee.org/ielx5/4294904/4294905/04294917.pdf?arnumber=4294917

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  2. 2
    Conference
    Field stop IGBTs with dynamic clamping capability - a new degree of freedom for future inverter designs?

    المؤلفون: Laska, T., Bassler, M., Miller, G., Schaffer, C., Umbach, F.

    المصدر: 2005 European Conference on Power Electronics and Applications ; volume 1990, page 8 pp.-P.8

    الاتاحة: http://dx.doi.org/10.1109/epe.2005.219608
    http://xplorestaging.ieee.org/ielx5/11048/34861/01665798.pdf?arnumber=1665798

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  3. 3
    Conference
    Dynamic behaviour and ruggedness of advanced fast switching IGBTs and diodes

    المؤلفون: Mauder, A., Laska, T., Lorenz, L.

    المصدر: 38th IAS Annual Meeting on Conference Record of the Industry Applications Conference, 2003. ; volume 2, page 995-999

    الاتاحة: http://dx.doi.org/10.1109/ias.2003.1257660
    http://xplorestaging.ieee.org/ielx5/8893/28117/01257660.pdf?arnumber=1257660

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  4. 4
    Conference
    Ultra thin-wafer technology for a new 600 V-NPT-IGBT

    المؤلفون: Laska, T., Matschitsch, M., Scholz, W.

    المصدر: Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ; page 361-364

    الاتاحة: http://dx.doi.org/10.1109/ispsd.1997.601518
    http://xplorestaging.ieee.org/ielx3/4794/13252/00601518.pdf?arnumber=601518

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  5. 5
    Conference
    A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT

    المؤلفون: Laska, T., Miller, G.

    المصدر: International Technical Digest on Electron Devices ; page 807-810

    الاتاحة: http://dx.doi.org/10.1109/iedm.1990.237039
    http://xplorestaging.ieee.org/ielx5/878/6081/00237039.pdf?arnumber=237039

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  6. 6
    Conference
    Improved 3.5 kV IGBT-diode chipset and 800 A module applications

    المؤلفون: Brunner, H., Bruckmann, M., Hierholzer, M., Laska, T., Porst, A.

    المصدر: PESC Record. 27th Annual IEEE Power Electronics Specialists Conference ; volume 2, page 1748-1753

    الاتاحة: http://dx.doi.org/10.1109/pesc.1996.548817
    http://xplorestaging.ieee.org/ielx3/3925/11364/00548817.pdf?arnumber=548817

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  7. 7
    Conference
    The new IGBT generation a great improvement potential for motor drive systems

    المؤلفون: Laska, T., Lorenz, L., Mauder, A.

    المصدر: Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129) ; volume 5, page 2885-2889

    الاتاحة: http://dx.doi.org/10.1109/ias.2000.882575
    http://xplorestaging.ieee.org/ielx5/7073/19086/00882575.pdf?arnumber=882575

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  8. 8
    Conference
    The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential

    المؤلفون: Laska, T., Munzer, M., Pfirsch, F., Schaeffer, C., Schmidt, T.

    المصدر: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

    الاتاحة: http://dx.doi.org/10.1109/ispsd.2000.856842
    http://xplorestaging.ieee.org/ielx5/6912/18590/00856842.pdf?arnumber=856842

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  9. 9
    Academic Journal
    ChemInform Abstract: 13C NMR Spectroscopy Study of L‐Zeolite‐ and Silica‐Supported Platinum Catalysts.

    المؤلفون: SHARMA, S. B., LASKA, T. E., BALARAMAN, P., ROOT, T. W., DUMESIC, J. A.

    المصدر: ChemInform ; volume 26, issue 12 ; ISSN 0931-7597 1522-2667

    الاتاحة: http://dx.doi.org/10.1002/chin.199512022
    https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fchin.199512022
    https://onlinelibrary.wiley.com/doi/pdf/10.1002/chin.199512022

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  10. 10
    Academic Journal
    A 2000 V non-punchthrough IGBT with high ruggedness

    المؤلفون: Laska, T., Miller, G., Niedermeyr, J.

    المصدر: Solid-State Electronics ; volume 35, issue 5, page 681-685 ; ISSN 0038-1101

    الاتاحة: http://dx.doi.org/10.1016/0038-1101(92)90037-d
    https://api.elsevier.com/content/article/PII:003811019290037D?httpAccept=text/xml
    https://api.elsevier.com/content/article/PII:003811019290037D?httpAccept=text/plain

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  11. 11
    Conference
    Ultrathin 400V FS IGBT for HEV applications.

    المؤلفون: Boving, H., Laska, T., Pugatschow, A., Jakobi, W.

    المصدر: 2011 IEEE 23rd International Symposium on Power Semiconductor Devices & ICs (ISPSD); 2011, p64-67, 4p


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  12. 12
    Conference
    Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness.

    المؤلفون: Laska, T., Miller, G., Pfaffenlehner, M., Turkes, P., Berger, D., Gutsmann, B., Kanschat, P., Munzer, M.

    المصدر: ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003; 2003, p152-155, 4p


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  13. 13
    Conference
    1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction.

    المؤلفون: Pfaffenlehner, M., Laska, T., Mallwitz, R., Mauder, A., Pfirsch, F., Schaeffer, C.

    المصدر: Proceedings of the 14th International Symposium on Power Semiconductor Devices & Ics; 2002, p105-108, 4p


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  14. 14
    Conference
    The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential.

    المؤلفون: Laska, T., Munzer, M., Pfirsch, F., Schaeffer, C., Schmidt, T.

    المصدر: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094); 2000, p355-358, 4p


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  15. 15
    Conference
    A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT.

    المؤلفون: Laska, T., Miller, G.

    المصدر: International Technical Digest on Electron Devices; 1990, p807-810, 4p


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  16. 16
    Conference
    1200 V-trench-IGBT study with square short circuit SOA.

    المؤلفون: Laska, T., Pfirsch, F., Hirler, F., Niedermeyr, J., Schaffer, C., Schmidt, T.

    المصدر: Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD'98 (IEEE Cat No98CH36212); 1998, p433-436, 4p


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  17. 17
    Conference
    Ultra thin-wafer technology for a new 600 V-NPT-IGBT.

    المؤلفون: Laska, T., Matschitsch, M., Scholz, W.

    المصدر: Proceedings of 9th International Symposium on Power Semiconductor Devices & IC's; 1997, p361-364, 4p


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  18. 18
    Conference
    Progress in development of the 3.5 kV high voltage IGBT/diode chipset and 1200 A module applications.

    المؤلفون: Brunner, H., Hierholzer, M., Laska, T., Porst, A.

    المصدر: Proceedings of 9th International Symposium on Power Semiconductor Devices & IC's; 1997, p225-228, 4p


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  19. 19
    Conference
    Optimizing the vertical IGBT structure-the NPT concept as the most economic and electrically ideal solution for a 1200 V-IGBT.

    المؤلفون: Laska, T., Fugger, J., Hirler, F., Scholz, W.

    المصدر: 8th International Symposium on Power Semiconductor Devices & ICs ISPSD '96 Proceedings; 1996, p169-172, 4p


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  20. 20
    Conference
    A low loss/highly rugged IGBT-generation based on a self aligned process with double implanted n/n/sup +/-emitter.

    المؤلفون: Laska, T., Porst, A., Brunner, H., Kiffe, W.

    المصدر: Proceedings of the 6th International Symposium on Power Semiconductor Devices & Ics; 1994, p171-175, 5p


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