المؤلفون: Hannes Dahlberg, Oscar Kaatranen, Karl-Magnus Persson, Arto Rantala, Jacek Flak, Lars-Erik Wernersson

المصدر: IEEE Access, Vol 13, Pp 9923-9930 (2025)

مصطلحات موضوعية: BEOL integration, CMOS, FeFET, ferroelectricity, HZO, non-volatile memory, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10835082/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/2b10b6b1941f491296d8e86043e47e41

المؤلفون: Gautham Rangasamy, Zhongyunshen Zhu, Lars-Erik Wernersson

المصدر: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 8-12 (2024)

مصطلحات موضوعية: III-V, source engineering, steep-slope, tunnel field-effect transistors (TFETs), vertical nanowires, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10409158/; https://doaj.org/toc/2329-9231

URL الوصول: https://doaj.org/article/a408c070e7b04b6c926ef356cd5dd6b0

المؤلفون: Sandra Benter, Adam Jönsson, Jonas Johansson, Lin Zhu, Evangelos Golias, Lars-Erik Wernersson, Anders Mikkelsen

المصدر: Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)

مصطلحات موضوعية: Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2041-1723

URL الوصول: https://doaj.org/article/8d06ecb792ef4b69aabc01e45761b456

المؤلفون: Zhongyunshen Zhu, Anton E. O. Persson, Lars-Erik Wernersson

المصدر: Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)

مصطلحات موضوعية: Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2041-1723

URL الوصول: https://doaj.org/article/a89ba123345f4283bd9a3e2638d6d5a9

المؤلفون: Gautham Rangasamy, Zhongyunshen Zhu, Lars-Erik Wernersson

المصدر: IEEE Access, Vol 11, Pp 95692-95696 (2023)

مصطلحات موضوعية: Vertical nanowires, III-V, TFETs, steep-slope, source engineering, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10234407/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/89fb3b23368246b29bd3d1a5388c62aa

المؤلفون: Gautham Rangasamy, Zhongyunshen Zhu, Lars Ohlsson Fhager, Lars‐Erik Wernersson

المصدر: Electronics Letters, Vol 59, Iss 18, Pp n/a-n/a (2023)

مصطلحات موضوعية: current‐mode circuits, III‐V semiconductors, tunnel transistors, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://doaj.org/toc/0013-5194; https://doaj.org/toc/1350-911X

URL الوصول: https://doaj.org/article/b05bec842d5749bf81f204179803a597

المؤلفون: Karl-Magnus Persson, Mamidala Saketh Ram, Lars-Erik Wernersson

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 564-569 (2021)

مصطلحات موضوعية: RRAM, Al₂O₃, HfO₂, multibit, diffusion barrier, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9429729/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/65218223521242e4874ceea1dd1dcb05

المؤلفون: Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 70-75 (2019)

مصطلحات موضوعية: Vertical, nanowire, InAs, InGaAs, MOSFET, heterostructure, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8515017/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/b8b2b654d957411ab11ff371ad57a930

المؤلفون: Andrea Troian, Johan V. Knutsson, Sarah R. McKibbin, Sofie Yngman, Aein S. Babadi, Lars-Erik Wernersson, Anders Mikkelsen, Rainer Timm

المصدر: AIP Advances, Vol 8, Iss 12, Pp 125227-125227-8 (2018)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/f5826e7ec9214ecaab1bc10e1d49d575

المؤلفون: Erik Lind, Elvedin Memisevic, Anil W. Dey, Lars-Erik Wernersson

المصدر: IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 96-102 (2015)

مصطلحات موضوعية: Tunnel field effect transistors (TFET), InAs, GaSb, III-V, broken gap, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/7004776/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/95dd875134b04f74a3c9dd387929d328

المؤلفون: Lars Ohlsson, Lars-Erik Wernersson

المصدر: IEEE Access, Vol 2, Pp 1307-1313 (2014)

مصطلحات موضوعية: Multi-Gbit/s, on-off keying (OOK), wireless communication, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/6934981/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/c3544b0eb3b34ac0817300a524eda1c0

المؤلفون: Zhongyunshen Zhu (8740266), Adam Jönsson (11731654), Yen-Po Liu (8524272), Johannes Svensson (1377888), Rainer Timm (1302651), Lars-Erik Wernersson (1346226)

مصطلحات موضوعية: Physiology, Space Science, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, two different processes, ray photoelectron spectroscopy, poor gate modulation, gate dielectric interface, equally controllable etching, ipa pretreated sample, digital etch schemes, achieve improved electrostatics, based cmos process, gasb nanowires compared, based boe 30, improved electrostatics, based semiconductors, based p, based metal, κ deposition, typically inhibited, type devices, subthreshold swing, substantial reduction, stronger reduction, semiconductor field, low quality, ipa resulted, ga oxides

Relation: https://figshare.com/articles/journal_contribution/Improved_Electrostatics_through_Digital_Etch_Schemes_in_Vertical_GaSb_Nanowire_p_MOSFETs_on_Si/18128006

الاتاحة: https://doi.org/10.1021/acsaelm.1c01134.s001

المؤلفون: Mamidala Saketh Ram, Johannes Svensson, Lars-Erik Wernersson

المصدر: ACS Applied Materials & Interfaces. 15:19085-19091

مصطلحات موضوعية: General Materials Science

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5e060d64a15422a213263cb8491331d2
https://doi.org/10.1021/acsami.2c21669

المؤلفون: Adam Jönsson (11731654), Johannes Svensson (1377888), Elisabetta Maria Fiordaliso (11731657), Erik Lind (1501189), Markus Hellenbrand (11731660), Lars-Erik Wernersson (1346226)

مصطلحات موضوعية: Biophysics, Biochemistry, Medicine, Genetics, Neuroscience, Biotechnology, Immunology, Cancer, Computational Biology, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, vertical nanowire mosfet, ultrathin vertical vls, adequate characterization techniques, constant gate length, g , , gate position, >< sub, v <, l <, viable candidates, validated using, threshold voltage, systematically changing, improved performance, established technique, electron holography, doping profiles, doping profile

Relation: https://figshare.com/articles/journal_contribution/Doping_Profiles_in_Ultrathin_Vertical_VLS-Grown_InAs_Nanowire_MOSFETs_with_High_Performance/17052469

الاتاحة: https://doi.org/10.1021/acsaelm.1c00729.s001

المؤلفون: Lars-Erik Wernersson, Anton Persson, Hannes Dahlberg, Robin Athle

المصدر: ACS Applied Electronic Materials. 4:6357-6363

مصطلحات موضوعية: Materials Chemistry, Electrochemistry, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::397dcceb1842e5723b25945fd095fb14
https://doi.org/10.1021/acsaelm.2c01483

المؤلفون: Anton E. O. Persson, Zhongyunshen Zhu, Robin Athle, Lars-Erik Wernersson

المصدر: IEEE Electron Device Letters; 43(6), pp 854-857 (2022)

مصطلحات موضوعية: Other Electrical Engineering, Electronic Engineering, Information Engineering, Hardware_GENERAL, Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8be0bc04780df6c7f6af09f90daae48f
https://doi.org/10.1109/led.2022.3171597

المؤلفون: Lars-Erik Wernersson, Erik Lind, Stefan Andric, Fredrik Lindelow, Lars Ohlsson Fhager

المصدر: IEEE Transactions on Microwave Theory and Techniques. 70:1284-1291

مصطلحات موضوعية: Radiation, Materials science, business.industry, Transconductance, Amplifier, Condensed Matter Physics, Noise figure, Low-noise amplifier, Noise (electronics), Parasitic capacitance, Logic gate, MOSFET, Optoelectronics, Electrical and Electronic Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ed2560cdcce0637eb1ae6e908e0d80b2
https://doi.org/10.1109/tmtt.2021.3124088

المؤلفون: Zhongyunshen Zhu, Adam Jönsson, Yen-Po Liu, Johannes Svensson, Rainer Timm, Lars-Erik Wernersson

المصدر: ACS Applied Electronic Materials

مصطلحات موضوعية: digital etch, MOSFET, GaSb, BOE 30:1, nanowire, Materials Chemistry, Electrochemistry, HCl:IPA, III−V, Article, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d2da88c3dcc13f88e8f477d8505463c
https://doi.org/10.1021/acsaelm.1c01134

المؤلفون: Mamidala Saketh Ram, Karl-Magnus Persson, Austin Irish, Adam Jönsson, Rainer Timm, Lars-Erik Wernersson

المصدر: Nature Electronics. 4:914-920

مصطلحات موضوعية: Electrical and Electronic Engineering, Instrumentation, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::92eaf0761865ddb8a7b04c7407176f5c
https://doi.org/10.1038/s41928-021-00688-5

المؤلفون: Lars-Erik Wernersson, Zhongyunshen Zhu, Anton Persson

المصدر: Science Advances. 9

مصطلحات موضوعية: Multidisciplinary

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c5786b55e7cb3a42296a711cd6b0ae41
https://doi.org/10.1126/sciadv.ade7098