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1Academic Journal
المؤلفون: Omar Lozano, Q. Y. Chen, B. P. Tilakaratne, H. W. Seo, X. M. Wang, P. V. Wadekar, P. V. Chinta, L. W. Tu, N. J. Ho, D. Wijesundera, W. K. Chu
المصدر: AIP Advances, Vol 3, Iss 6, Pp 062107-062107 (2013)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2158-3226
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2
المؤلفون: M. Chen, X. M. Wang, Q. Y. Chen, H. W. Seo, A. Bensaoula, Wei-Kan Chu, L. W. Tu
المصدر: Journal of the Korean Physical Society. 71:340-344
مصطلحات موضوعية: 010302 applied physics, Materials science, Field (physics), business.industry, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Field electron emission, 0103 physical sciences, Optoelectronics, Nanorod, 0210 nano-technology, business, Common emitter
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3Academic JournalTime-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films.
المؤلفون: Mohanta, Antaryami, Der-Jun Jang, Ming-Sung Wang, L. W. Tu
المصدر: Journal of Applied Physics; 2014, Vol. 115 Issue 4, p1-6, 6p, 1 Chart, 5 Graphs
مصطلحات موضوعية: PHOTOLUMINESCENCE, FLUORESCENCE, INDIUM nitride, THIN film research, ELECTRON density
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4
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5
المؤلفون: K. Lorenz, S. M. C. Miranda, N. P. Barradas, E. Alves, Y. Nanishi, W. J. Schaff, L. W. Tu, V. Darakchieva, Floyd D. McDaniel, Barney L. Doyle
المصدر: AIP Conference Proceedings.
مصطلحات موضوعية: Materials science, Ion beam analysis, Hydrogen, business.industry, Doping, chemistry.chemical_element, Nitride, Conductivity, Epitaxy, chemistry, Optoelectronics, Atomic physics, business, Beam (structure), Molecular beam epitaxy
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6Academic Journal
المؤلفون: K. R. Wang, L. W. Tu, S. J. Lin, Y. L. Chen, Z. W. Jiang, M. Chen, C. L. Hsiao, K. H. Cheng, J. W. Yeh, S. K. Chen
المساهمون: 林樹均
مصطلحات موضوعية: Unintentionally, doped, InN, grown, atomically, flat, AlN, intermediate, layer, plasma-assisted, molecular, beam, epitaxy
Time: 3
وصف الملف: application/pdf; 408829 bytes
Relation: physica status solidi (b) Volume 243, Issue 7, pages 1461–1467, June 2006; http://nthur.lib.nthu.edu.tw/dspace/handle/987654321/52751
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7
المؤلفون: Hye-Won Seo, C. Y. Ho, Y. T. Lin, N. J. Ho, L. Yuan, Q. Y. Chen, L. W. Tu, D. P. Norman
المصدر: Applied Physics Letters. 94:201907
مصطلحات موضوعية: Photoluminescence, Nanolithography, Pedestal, Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), business.industry, Wide-bandgap semiconductor, Optoelectronics, Nanorod, Surface layer, Luminescence, business
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8Academic Journal
المؤلفون: Y. T. Lin, Wadekar, P. V., H. S. Kao, T. H. Chen, H. C. Huang, N. J. Ho, Q. Y. Chen, L. W. Tu
المصدر: Applied Physics Letters; 2/10/2014, Vol. 104 Issue 6, p062414-1-062414-4, 4p, 1 Color Photograph, 3 Graphs
مصطلحات موضوعية: FERROMAGNETISM, NANORODS, MAGNETIC semiconductors, MOLECULAR beam epitaxy, MAGNETIC properties, X-ray diffraction
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9
المؤلفون: 李孟恩, D. J. Jang, G. T. Lin, C. L. Hsiao, L. W. Tu, Meng-En Lee
المساهمون: 物理系
Relation: Appl. Phys. Lett. 92, 042101 (2008); http://ir.nknu.edu.tw/ir//handle/987654321/10515; http://ir.nknu.edu.tw/ir/bitstream/987654321/10515/1/index.html
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10
المؤلفون: 黃裕峰, Yuh-Fung Huang, H. Y. Ueng, C. R. Chung, L. W. Tu, T. S. Lim, W. C. Chen, J. L. Chern
المساهمون: 光電與通訊工程學系
مصطلحات موضوعية: Chaos, Contamination, Diode lasers, Eigenvalues and eigenfunctions, Laser noise, Noise level, Semiconductor device noise, Semiconductor lasers, Signal to noise ratio, Singular value decomposition
Relation: IEEE J. Quantum Electron / vol.35 iss.5, p.757-763, DOI:10.1109/3.760323; http://ir.nknu.edu.tw/ir//handle/987654321/12058; http://ir.nknu.edu.tw/ir/bitstream/987654321/12058/1/index.html
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المؤلفون: George T. Duncan, Joseph J. Rotman, L. W. Tu, Jan Mycielski, Seth Warner, Joseph B. Kadane, M. S. Klamkin
المصدر: The American Mathematical Monthly. 87:675
مصطلحات موضوعية: General Mathematics
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12Academic Journal
المؤلفون: K. Fujiwara, K. Kakurai, L. W. Tung, N. Ikeda, T. Karasudani, 加倉井 和久, 池田 直, 烏谷 友之, 藤原 孝将
المصدر: Meeting Abstracts of the Physical Society of Japan. 2017, :2667