يعرض 1 - 20 نتائج من 66 نتيجة بحث عن '"L. H. Dmowski"', وقت الاستعلام: 0.84s تنقيح النتائج
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    المصدر: ECS transactions 50 (2012): 163–171. doi:10.1149/05003.0163ecst
    info:cnr-pdr/source/autori:M. Leszczynski 1, P. Prystawko 1, J. Plesiewicz 1, L. Dmowski 1, E. Litwin-Staszewska 1, S. Grzanka 1, E. Grzanka 1, F. Roccaforte 2/titolo:Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy/doi:10.1149%2F05003.0163ecst/rivista:ECS transactions/anno:2012/pagina_da:163/pagina_a:171/intervallo_pagine:163–171/volume:50

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    المساهمون: Institute of Experimental Physics [Warsaw] (IFD), Faculty of Physics [Warsaw] (FUW), University of Warsaw (UW)-University of Warsaw (UW), College of Materials Science and Optoelectronic Technology, University of Chinese Academy Sciences, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institute of High Pressure Physics [Warsaw] (IHPP), Polska Akademia Nauk = Polish Academy of Sciences (PAN)

    المصدر: Journal of Applied Physics
    Journal of Applied Physics, American Institute of Physics, 2014, 115 (17), ⟨10.1063/1.4875482⟩

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    المصدر: Gorczyca, I, Dmowski, L, Plesiewicz, J, Suski, T, Christensen, N E, Svane, A, Gallinat, C S, Koblmueller, G & Speck, J S 2008, ' Band structure and effective mass of InN under pressure ', IPPS physica status solidi (b), vol. 245, no. 5, pp. 887-889 .
    Gorczyca, I, Dmowski, L, Plesiewicz, J, Suski, T, Christensen, N E, Svane, A, Gallinat, C S, Koblmueller, G & Speck, J S 2007, ' Band structure and effective mass of InN under pressure ', 7th International Conference of Nitride Semiconductors, Las Vegas, Nevada, United States, 16/09/2007-21/09/2007 .

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