يعرض 1 - 5 نتائج من 5 نتيجة بحث عن '"Kwon, Ra Hee"', وقت الاستعلام: 0.30s تنقيح النتائج
  1. 1
    Design Optimization of AlN/GaN-Based Double-Heterojunction Fin-Type High Electron Mobility Transistors for High On-State Current

    المؤلفون: Yoon Young Jun, Kang In Man, Jang Young In, Eun Hye Rim, Seo Jae Hwa, Kwon Ra Hee, Lee Jung‐Hee

    المصدر: Journal of Nanoscience and Nanotechnology. 16:10193-10198

    مصطلحات موضوعية: Materials science, business.industry, 020208 electrical & electronic engineering, Transistor, Biomedical Engineering, Induced high electron mobility transistor, Bioengineering, Heterojunction, 02 engineering and technology, General Chemistry, Condensed Matter Physics, Fin (extended surface), law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, General Materials Science, Current (fluid), business, High electron

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1e5e78a19a31b8468006e19c9fa5ce68
    https://doi.org/10.1166/jnn.2016.13126

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  2. 2
    Conference
    InGaAs-based junctionless transistor with dual-spacer dielectric for low power loss and high frequency mobile network system

    المؤلفون: Yoon, Young Jun, Seo, Jae Hwa, Kwon, Ra Hee, Jang, Young In, Kang, In Man

    المصدر: 2016 International Conference on Information Networking (ICOIN) ; page 436-438

    الاتاحة: http://dx.doi.org/10.1109/icoin.2016.7427153
    http://xplorestaging.ieee.org/ielx7/7422341/7427058/7427153.pdf?arnumber=7427153

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  3. 3
    Academic Journal
    Electrical Performances of InN/GaN Tunneling Field-Effect Transistor

    المؤلفون: Cho, Min Su, Kwon, Ra Hee, Seo, Jae Hwa, Yoon, Young Jun, Jang, Young In, Won, Chul-Ho, Kim, Jeong-Gil, Lee, Junsoo, Cho, Seongjae, Lee, Jung-Hee, Kang, In Man

    المصدر: Journal of Nanoscience and Nanotechnology ; volume 17, issue 11, page 8355-8359 ; ISSN 1533-4880

    الاتاحة: http://dx.doi.org/10.1166/jnn.2017.15134
    http://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000011/art00094

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  4. 4
    Conference
    Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET

    المؤلفون: Yoo, Gwan Min, Seo, Jae Hwa, Yoon, Young Jun, Kim, Young Jae, Kim, Sung Yoon, Kang, Hye Su, Eun, Hye Rim, Kwon, Ra Hee, Jang, Young In, Kang, In Man, Lee, Seong Min, Cho, Seongjae

    المصدر: The 18th IEEE International Symposium on Consumer Electronics (ISCE 2014) ; page 1-2

    الاتاحة: http://dx.doi.org/10.1109/isce.2014.6884475
    http://xplorestaging.ieee.org/ielx7/6871743/6884278/06884475.pdf?arnumber=6884475

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  5. 5
    Conference
    Design optimization of Si/Ge-based heterojunction arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) which applicable for future mobile communication systems.

    المؤلفون: Seo, Jae Hwa, Yoon, Young Jun, Kwon, Ra Hee, Jang, Young In, Kang, In Man

    المصدر: 2016 International Conference on Information Networking (ICOIN); 2016, p442-444, 3p


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