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1Academic Journal
المؤلفون: Kolliopoulou, S, Tsoukalas, D, Dimitrakis, P, Normand, P, Paul, S, Pearson, C, Molloy, A, Petty, M C
المصدر: Journal of Physics: Conference Series ; volume 10, page 57-60 ; ISSN 1742-6588 1742-6596
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2Academic Journal
المؤلفون: Kolliopoulou, S.1, Dimitrakis, P.1, Normand, P.1, Hao-Li Zhang2, Cant, Nicola2, Evans, Stephen D.2, Paul, S.3, Pearson, C.3, Molloy, A.3, Petty, M.C.3, Tsoukalas, D.1,4 dtsouk@imel.demokritos.gr
المصدر: Journal of Applied Physics. 10/15/2003, Vol. 94 Issue 8, p5234. 6p. 1 Black and White Photograph, 2 Diagrams, 5 Graphs.
مصطلحات موضوعية: *READ-only memory, *NANOPARTICLES, *MULTILAYERED thin films, *EQUIPMENT & supplies
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3Conference
المؤلفون: Kolliopoulou, S., Tsoukalas, D., Dimitrakis, P., Normand, P., Hao-Li Zhang, Cant, N., Evans, S.D., Paul, S., Pearson, C., Molloy, A., Petty, M.C.
المصدر: Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) ; page 477-480
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4Academic Journal
المؤلفون: Tang, Jun, Kolliopoulou, S., Tsoukalas, D.
المصدر: Microelectronic Engineering ; volume 86, issue 4-6, page 861-864 ; ISSN 0167-9317
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5Academic Journal
المؤلفون: Kolliopoulou, S., Tsoukalas, D., Dimitrakis, P., Normand, P., Paul, S., Pearson, C., Molloy, A., Petty, M. C.
المصدر: MRS Proceedings ; volume 830 ; ISSN 0272-9172 1946-4274
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6Academic Journal
المؤلفون: Paul, S., Pearson, C., Molloy, A., Cousins, M. A., Green, M., Kolliopoulou, S., Dimitrakis, P., Normand, P., Tsoukalas, D., Petty, M. C.
المصدر: Nano letters, 2003, Vol.3(4), pp.533-536 [Peer Reviewed Journal]
مصطلحات موضوعية: Nanocrystals, Storage, Gold
Relation: dro:272; http://dro.dur.ac.uk/272/; http://dx.doi.org/10.1021/nl034008t
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7Conference
المؤلفون: Kolliopoulou, S., Tsoukalas, D., Dimitrakis, P., Normand, P., Hao-Li Zhang, Cant, N., Evans, S.D., Paul, S., Pearson, C., Molloy, A., Petty, M.C.
المصدر: ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p477-480, 4p
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8Academic Journal
المؤلفون: Kolliopoulou, S.1 voula@imel.demokritos, Dimitrakis, P.1, Normand, P.1, Zhang, H.-L.2, Cant, N.2, Evans, S.D.2, Paul, S.3, Pearson, C.3, Molloy, A.3, Petty, M.C.3, Tsoukalas, D.4
المصدر: Microelectronic Engineering. Jun2004, Vol. 73/74, p725-729. 5p.
مصطلحات موضوعية: *METAL oxide semiconductor field-effect transistors, *SEMICONDUCTORS, *SILICON, *TRANSISTORS
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9Periodical
المؤلفون: Tsoukalas, Dimitris, Kolliopoulou, S., Dimitrakis, P., Normand, P., Petty, M.C.
المصدر: Advances in Science and Technology; September 2008, Vol. 54 Issue: 1 p451-457, 7p
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10Periodical
المؤلفون: Tsoukalas, Dimitris, Kolliopoulou, S., Dimitrakis, P., Normand, P., Petty, M.C.
المصدر: Advances in Science and Technology; October 2006, Vol. 45 Issue: 1 p451-457, 7p
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11
المؤلفون: Tsoukalas, D, Kolliopoulou, S, Dimitrakis, P, Normand, P, Petty, MC
مصطلحات موضوعية: Flash memory, Nanoparticles, Self-assembly, Wafer bonding, Data storage equipment, Electronic properties, Gold deposits, Materials, Self assembly, Semiconducting silicon compounds, Silicon wafers, Three dimensional, Vanadium, 3-D architectures, Charge storages, Electrical characteristics, Functionalization, Gate oxides, Gate stack materials, Gold nanoparticles, Hybrid silicons, Langmuir-Blodgett techniques, Low temperatures, Memory cells, Memory devices, Memory windows, Mos fets, Organic insulators, Organic technologies, Organic-inorganic
Relation: 54; 451; 457
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12
المؤلفون: Tsoukalas, D, Dimitrakis, P, Kolliopoulou, S, Normand, P
مصطلحات موضوعية: CMOS, Nanoparticle, Non-volatile memory, Self-assembly, Materials Science, Multidisciplinary, Physics, Condensed Matter, Chemical vapor deposition, CMOS integrated circuits, Data storage equipment, Electric potential, Energy absorption, Ion implantation, Molecular beam epitaxy, Semiconductor devices, Sputtering, Metallic nanoparticles, Nanostructured materials
Relation: ISI:000233895800014; 124-125; SUPPL.; 93; 101
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13
المؤلفون: Goustouridis, D, Minoglou, K, Kolliopoulou, S, Chatzandroulis, S, Morfouli, P, Normand, P, Tsoukalas, D
مصطلحات موضوعية: Bond strength, Low temperature bonding, Plasma activation, Silicon wafer bonding, Silicon-on-insulator (SOI), Engineering, Electrical & Electronic, Instruments & Instrumentation, Bond strength (chemical), Chemical activation, Chemical bonds, Electronics packaging, Low temperature effects, Networks (circuits), Silicon on insulator technology, Silicon wafers, Thin films
Relation: ISI:000188700700063; 110; 1-3; 401; 406