المؤلفون: Hiroshiba, Nobuya, Akiraka, Mitsuru, Kojima, Hirotaka, Ohnishi, Satoshi, Ebata, Atsushi, Tsuji, Hideto, Tanaka, Saburo, Koike, Kazuto, Ariyoshi, Seiichiro

المساهمون: JSPS

المصدر: Physica B: Condensed Matter ; volume 649, page 414488 ; ISSN 0921-4526

الاتاحة: http://dx.doi.org/10.1016/j.physb.2022.414488
https://api.elsevier.com/content/article/PII:S0921452622007736?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0921452622007736?httpAccept=text/plain

المؤلفون: Hiroshiba, Nobuya, Kawano, Yuta, Ongko, Richard, Matsubara, Ryosuke, Kubono, Atsushi, Kojima, Hirotaka, Koike, Kazuto

المصدر: Physica Status Solidi. A: Applications & Materials Science; Dec2023, Vol. 220 Issue 24, p1-6, 6p

مصطلحات موضوعية: THIN films, THIOPHENES, ATOMIC force microscopy, GRAZING incidence, SURFACE analysis, SURFACE morphology

المؤلفون: Wada, Hideo, Fukawa, Taito, Toyota, Kazuaki, Koyama, Masatoshi, Hiroshiba, Nobuya, Koike, Kazuto

المصدر: Electronics and Communications in Japan ; volume 106, issue 3 ; ISSN 1942-9533 1942-9541

الاتاحة: http://dx.doi.org/10.1002/ecj.12403
https://onlinelibrary.wiley.com/doi/pdf/10.1002/ecj.12403

المؤلفون: Chichibu, Shigefusa F., Uedono, Akira, Kojima, Kazunobu, Koike, Kazuto, Yano, Mitsuaki, Gonda, Shun-ichi, Ishibashi, Shoji

المصدر: Journal of Applied Physics; 6/7/2020, Vol. 127 Issue 21, p1-6, 6p, 1 Diagram, 2 Graphs

مصطلحات موضوعية: POSITRON annihilation, TRANSISTORS, N-type semiconductors, TRANSITION metals, DISLOCATION density, DENSITY functional theory, PROTON beams, SINGLE crystals

المؤلفون: HIROSHIBA, Nobuya, Kawano, Yuta, Ongko, Richard, Matsubara, Ryosuke, Kubono, Atsushi, Kojima, Hirotaka, Koike, Kazuto

الاتاحة: http://dx.doi.org/10.26434/chemrxiv-2023-kld71
https://chemrxiv.org/engage/api-gateway/chemrxiv/assets/orp/resource/item/642ab01e16782ec9e64707c5/original/early-stage-growth-process-of-dinaphtho-2-3-b-2-3-f-thieno-3-2-b-thiophene-dntt-thin-film.pdf

المؤلفون: Wada, Hideo, Fukawa, Taito, Toyota, Kazuaki, Koyama, Masatoshi, Hiroshiba, Nobuya, Koike, Kazuto

المصدر: Electronics & Communications in Japan; Sep2023, Vol. 106 Issue 3, p1-10, 10p

مصطلحات موضوعية: THIN films, THERMOCHROMISM, PHASE transitions, BUFFER layers, ELECTROCHROMIC windows, TRANSITION temperature, CALCIUM ions

المؤلفون: Koike, Kazuto, Mori, Yuina, Sasa, Shigehiko, Hirofuji, Yuichi, Yano, Mitsuaki

المصدر: Procedia Engineering ; volume 168, page 84-88 ; ISSN 1877-7058

الاتاحة: http://dx.doi.org/10.1016/j.proeng.2016.11.153
https://api.elsevier.com/content/article/PII:S1877705816334634?httpAccept=text/plain
https://api.elsevier.com/content/article/PII:S1877705816334634?httpAccept=text/xml

المؤلفون: Koike, Kazuto¹ kazuto.koike@oit.ac.jp, Yano, Mitsuaki¹, Gonda, Shun-ichi², Uedono, Akira³, Ishibashi, Shoji⁴, Kojima, Kazunobu⁵, Chichibu, Shigefusa F.⁵

المصدر: Journal of Applied Physics. 2018, Vol. 123 Issue 16, pN.PAG-N.PAG. 7p. 1 Diagram, 9 Graphs.

مصطلحات موضوعية: *POLARITY (Physics), *SEMICONDUCTOR defects, *ELECTRIC properties of zinc oxide, *PHOTOLUMINESCENCE measurement, *IRRADIATION

المؤلفون: Zubiaga, Asier, Tuomisto, Filip, Coleman, Victoria, Tan, Hoe H., Jagadish, Chennupati, Koike, Kazuto, Sasa, Shigehiko, Inoue, Masataka, Yano, Mitsuaki

المساهمون: Department of Applied Physics, Antimatter and Nuclear Engineering, Aalto-yliopisto, Aalto University

مصطلحات موضوعية: irradiation, positron, ZnO

وصف الملف: 1-5; application/pdf

Relation: Physical Review B; Volume 78, issue 3; Zubiaga, A, Tuomisto, F, Coleman, V, Tan, H H, Jagadish, C, Koike, K, Sasa, S, Inoue, M & Yano, M 2008, ' Mechanisms of electrical isolation in O + -irradiated ZnO ', Physical Review B, vol. 78, no. 3, 035125, pp. 1-5 . https://doi.org/10.1103/PhysRevB.78.035125; PURE UUID: 7477d287-d1ac-45b5-8af6-8394f8b7566e; PURE ITEMURL: https://research.aalto.fi/en/publications/7477d287-d1ac-45b5-8af6-8394f8b7566e; PURE FILEURL: https://research.aalto.fi/files/13457549/PhysRevB.78.035125.pdf; https://aaltodoc.aalto.fi/handle/123456789/30985; URN:NBN:fi:aalto-201805222425

الاتاحة: https://aaltodoc.aalto.fi/handle/123456789/30985
https://doi.org/10.1103/PhysRevB.78.035125

المؤلفون: Leitsmann, R, Ramos, L E, Bechstedt, F, Groiss, H, Schäffler, F, Heiss, W, Koike, Kazuto, Harada, Hisahsi, Yano, Mitsuaki

المصدر: New Journal of Physics ; volume 8, issue 12, page 317-317 ; ISSN 1367-2630

الاتاحة: http://dx.doi.org/10.1088/1367-2630/8/12/317

المؤلفون: Chichibu Shigefusa F., Uedono Akira, Kojima Kazunobu, Koike Kazuto, Yano Mitsuaki, Gonda Shun-Ichi, Ishibashi Shoji

وصف الملف: application/pdf

Relation: https://doi.org/10.1063/5.0011309; Journal of Applied Physics; 21; 127; 215704; AA00693547; http://hdl.handle.net/2241/0002004637; https://tsukuba.repo.nii.ac.jp/records/2004637

الاتاحة: https://tsukuba.repo.nii.ac.jp/record/2004637/files/JAP_127-21.pdf
http://hdl.handle.net/2241/0002004637
https://tsukuba.repo.nii.ac.jp/records/2004637

المؤلفون: Kuwagata, Wataru, Mito, Hiroki, Murakami, Satoshi, Koike, Kazuto, Harada, Yoshiyuki, Sasa, Shigehiko, Yano, Mitsuaki, Kobayashi, Shintaro, Inaba, Katsuhiko

المصدر: 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ; page 58-59

الاتاحة: http://dx.doi.org/10.1109/imfedk.2017.7998041
http://xplorestaging.ieee.org/ielx7/7990363/7998014/07998041.pdf?arnumber=7998041

المؤلفون: Yano, Mitsuaki, Kuwagata, Wataru, Mito, Hiroki, Koike, Kazuto, Kobayashi, Shintaro, Inaba, Katsuhiko

المساهمون: Japan Society for the Promotion of Science

المصدر: Japanese Journal of Applied Physics ; volume 57, issue 10, page 100309 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.7567/jjap.57.100309
http://stacks.iop.org/1347-4065/57/i=10/a=100309/pdf
http://stacks.iop.org/1347-4065/57/i=10/a=100309?key=crossref.b512dfe6b94a126084c230deb6a7b358

المؤلفون: Koike, Kazuto, Yano, Mitsuaki, Gonda, Shun-ichi, UEDONO, Akira, Ishibashi, Shoji, Kojima, Kazunobu, Chichibu, Shigefusa F.

وصف الملف: application/pdf

Relation: https://doi.org/10.1063/1.5010704; Journal of Applied Physics; 16; 123; 161562; AA00693547; http://hdl.handle.net/2241/00153675; https://tsukuba.repo.nii.ac.jp/records/48185

الاتاحة: https://tsukuba.repo.nii.ac.jp/record/48185/files/JAP_123-16.pdf
http://hdl.handle.net/2241/00153675
https://tsukuba.repo.nii.ac.jp/records/48185

المؤلفون: Iketani, Ken, Koike, Kazuto, Hirofuji, Yuichi, Maemoto, Toshihiko, Sasa, Shigehiko, Yano, Mitsuaki

المصدر: 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ; volume 18, page 40-41

الاتاحة: http://dx.doi.org/10.1109/imfedk.2015.7158539
http://xplorestaging.ieee.org/ielx7/7153313/7158481/07158539.pdf?arnumber=7158539

المؤلفون: Matsuo, Masayuki, Murayama, Takayuki, Koike, Kazuto, Sasa, Shigehiko, Yano, Mitsuaki, Gonda, Shun-ichi, Uedono, Akira, Ishigami, Ryoya, Kume, Kyo, Ohtomo, Tomomi, Furukawa, Erika, Yamazaki, Yoshiki, Kojima, Kazunobu, Chichibu, Shigefusa

المصدر: 2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ; volume 102, page 50-51

الاتاحة: http://dx.doi.org/10.1109/imfedk.2015.7158544
http://xplorestaging.ieee.org/ielx7/7153313/7158481/07158544.pdf?arnumber=7158544

المؤلفون: Kucheyev, S. O., Jagadish, C., Williams, J. S., Deenapanray, P. N. K., Yano, Mitsuaki, Koike, Kazuto, Sasa, Shigehiko, Inoue, Masataka, Ogata, Ken-ichi

المصدر: Journal of Applied Physics; 3/1/2003, Vol. 93 Issue 5, p2972, 5p, 1 Chart, 6 Graphs

مصطلحات موضوعية: ZINC oxide, TEMPERATURE, IONS

المؤلفون: Koike, Kazuto, Komai, Hisayoshi, Li, Shuwei, Yano, Mitsuaki

المصدر: Journal of Applied Physics. 1/15/2002, Vol. 91 Issue 2, p819. 4p. 1 Diagram, 5 Graphs.

مصطلحات موضوعية: *INDIUM compounds, *GALLIUM arsenide, *DIODES

المؤلفون: Yano, Mitsuaki, Koike, Kazuto, Matsuo, Masayuki, Murayama, Takayuki, Harada, Yoshiyuki, Inaba, Katsuhiko

المصدر: Applied Surface Science ; volume 381, page 32-35 ; ISSN 0169-4332

الاتاحة: http://dx.doi.org/10.1016/j.apsusc.2016.01.097
https://api.elsevier.com/content/article/PII:S0169433216001343?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0169433216001343?httpAccept=text/plain

المؤلفون: Mukai, Kazuya, Onaka, Takayuki, Koike, Kazuto, Maemoto, Toshihiko, Sasa, Shigehiko, Yano, Mitsuaki, Kadokura, Sadao, Nakamitsu, Yutaka

المصدر: 2013 IEEE International Meeting for Future of Electron Devices, Kansai ; page 46-47

الاتاحة: http://dx.doi.org/10.1109/imfedk.2013.6602233
http://xplorestaging.ieee.org/ielx7/6590038/6602213/06602233.pdf?arnumber=6602233