نتائج البحث - "Klüpfel, Fabian J."

1

Academic Journal

Low frequency noise of ZnO based metal-semiconductor field-effect transistors

المؤلفون: Klüpfel, Fabian J., von Wenckstern, Holger, Grundmann, Marius

مصطلحات موضوعية: Zinc oxide films, Carrier mobility, Amplifiers, info:eu-repo/classification/ddc/530, ddc:530

Relation: 033502

الاتاحة: https://ul.qucosa.de/id/qucosa%3A31224
https://ul.qucosa.de/api/qucosa%3A31224/attachment/ATT-0/

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2

Academic Journal

CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications

المؤلفون: Borany, Johannes von, Engelmann, Hans-Jürgen, Heinig, Karl-Heinz, Amat, Esteve, Hlawacek, Gregor, Klüpfel, Fabian J., Hübner, René, Möller, Wolfhard, Pourteau, Marie-Line, Rademaker, Guido, Rommel, Mathias, Baier, Leander, Pichler, Peter, Perez-Murano, Francesc, Tiron, Raluca

مصطلحات موضوعية: CMOS, Single-electron transistor, Nanostructure fabrication, Nanopillars, Silicon nanodot, Self-organization, Ion-beam mixing

وصف الملف: application/pdf

Relation: Semiconductor Science and Technology; Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology; 688072; https://publica.fraunhofer.de/handle/publica/439370; https://doi.org/10.24406/publica-1154

الاتاحة: https://publica.fraunhofer.de/handle/publica/439370
https://doi.org/10.1088/1361-6641/acbe5d
https://doi.org/10.24406/publica-1154

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3

Academic Journal

Field‐Effect Transistors: Ring Oscillators Based on ZnO Channel JFETs and MESFETs (Adv. Electron. Mater. 7/2016)

المؤلفون: Klüpfel, Fabian J., von Wenckstern, Holger, Grundmann, Marius

المصدر: Advanced Electronic Materials ; volume 2, issue 7 ; ISSN 2199-160X 2199-160X

الاتاحة: http://dx.doi.org/10.1002/aelm.201670037
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Faelm.201670037
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201670037

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4

Book

Metal-Semiconductor Field-Effect Transistors and Integrated Circuits Based on ZnO and Related Oxides

المؤلفون: Frenzel, Heiko, Lorenz, Michael, Schein, Friedrich-L., Lajn, Alexander, Klüpfel, Fabian J., Diez, Tobias, Wenckstern, Holger von, Grundmann, Marius

المصدر: Handbook of Zinc Oxide and Related Materials ; page 369-434 ; ISBN 9780429062582

الاتاحة: http://dx.doi.org/10.1201/b13071-11

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5

Compact Model for a Silicon Single Electron Transistor in a Stacked Nanopillar - Implementations in HSPICE and EXCEL/VBA ; Kompaktmodell für einen Einzelelektronentransistor in einer geschichteten Nanosäule - Implementierungen in HSPICE und EXCEL/VBA

المؤلفون: Klüpfel, Fabian J., Pichler, Peter

المساهمون: European Commission EC

مصطلحات موضوعية: circuit simulation, compact model, single electron transistor, SPICE, DDC::500 Naturwissenschaften und Mathematik::530 Physik::537 Elektrizität, Elektronik, DDC::600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::621 Angewandte Physik

وصف الملف: application/octet-stream

Relation: https://fordatis.fraunhofer.de/handle/fordatis/190.2; http://dx.doi.org/10.24406/fordatis/116.2

الاتاحة: https://fordatis.fraunhofer.de/handle/fordatis/190.2
https://doi.org/10.24406/fordatis/116.2

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6

Academic Journal

A Compact Model Based on Bardeens Transfer Hamiltonian Formalism for Silicon Single Electron Transistors

المؤلفون: Klüpfel, Fabian J.

Time: 670, 620, 530

Relation: IEEE access; IONS4SET; 688072; https://publica.fraunhofer.de/handle/publica/258193

الاتاحة: https://publica.fraunhofer.de/handle/publica/258193
https://doi.org/10.1109/ACCESS.2019.2924913

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7

Academic Journal

Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance

المؤلفون: Klüpfel, Fabian J.

مصطلحات موضوعية: stacked nanowire transistor, numerical simulation, inner spacer fabrication, silicon germanium

Time: 670, 620, 530

Relation: IEEE access; SUPERAID7; 688101; https://publica.fraunhofer.de/handle/publica/258241

الاتاحة: https://publica.fraunhofer.de/handle/publica/258241
https://doi.org/10.1109/ACCESS.2019.2925201

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8

Conference

3D simulation of silicon-based single-electron transistors ; 3D-Simulation von siliciumbasierten Einzelelektronentransistoren

المؤلفون: Klüpfel, Fabian J., Pichler, Peter

مصطلحات موضوعية: Quantum Dot, single electron transistor, numerical simulation

Time: 670, 620, 530

وصف الملف: application/pdf

Relation: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2017; International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017; IONS4SET; 688072; https://publica.fraunhofer.de/handle/publica/398534

الاتاحة: https://publica.fraunhofer.de/handle/publica/398534
https://doi.org/10.23919/SISPAD.2017.8085268

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