نتائج البحث - "Kim, Hea‐Jee"

1

Academic Journal

Real-Time Correlation Detection via Online Learning of a Spiking Neural Network with a Conductive-Bridge Neuron

المؤلفون: Kim, Dong-Won, Woo, Dae-Seong, Kim, Hea-Jee, Jin, Soo-Min, Jung, Sung-Mok, Kim, Dong-Eon, Kim, Jae-Joon, Shim, Tae-Hun, Park, Jea-Gun

المساهمون: Kim, Jae-Joon

Relation: Advanced Electronic Materials; https://hdl.handle.net/10371/183908; 000761241300001; 2-s2.0-85125183843; 160795

الاتاحة: https://hdl.handle.net/10371/183908

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2

Academic Journal

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge 3 Se 7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array

المؤلفون: Kim, Hea‐Jee, Woo, Dae‐Seong, Jin, Soo‐Min, Kwon, Hyo‐Jun, Kwon, Ki‐Hyun, Kim, Dong‐Won, Park, Dong‐Hyun, Kim, Dong‐Eon, Jin, Hong‐Uk, Choi, Hyun‐Do, Shim, Tae‐Hun, Park, Jea‐Gun

المساهمون: National Research Foundation of Korea

المصدر: Advanced Materials ; volume 34, issue 40 ; ISSN 0935-9648 1521-4095

الاتاحة: http://dx.doi.org/10.1002/adma.202203643
https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202203643
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/adma.202203643

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3

Academic Journal

Real‐Time Correlation Detection via Online Learning of a Spiking Neural Network with a Conductive‐Bridge Neuron

المؤلفون: Kim, Dong‐Won, Woo, Dae‐Seong, Kim, Hea‐Jee, Jin, Soo‐Min, Jung, Sung‐Mok, Kim, Dong‐Eon, Kim, Jae‐Joon, Shim, Tae‐Hun, Park, Jea‐Gun

المساهمون: National Research Foundation of Korea

المصدر: Advanced Electronic Materials ; volume 8, issue 7 ; ISSN 2199-160X 2199-160X

الاتاحة: http://dx.doi.org/10.1002/aelm.202101356
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101356
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/aelm.202101356

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4

Academic Journal

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory

المؤلفون: Jin, Soo‐Min, Kim, Hea‐Jee, Woo, Dae‐Seong, Jung, Sung‐Mok, Kim, Dong‐Eon, Shim, Tae‐Hun, Park, Jea‐Gun

المساهمون: Korea Semiconductor Research Consortium, Ministry of Trade, Industry and Energy

المصدر: Advanced Electronic Materials ; volume 8, issue 5 ; ISSN 2199-160X 2199-160X

الاتاحة: http://dx.doi.org/10.1002/aelm.202101083
https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202101083
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/aelm.202101083

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5

Academic Journal

Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner

المؤلفون: Kim, Hea-Jee, Kwon, Hyo-Jun, Park, Dong-Hyun, Park, Jea-Gun

المصدر: Journal of the Korean Physical Society ; volume 80, issue 12, page 1076-1080 ; ISSN 0374-4884 1976-8524

الاتاحة: http://dx.doi.org/10.1007/s40042-022-00497-9
https://link.springer.com/content/pdf/10.1007/s40042-022-00497-9.pdf
https://link.springer.com/article/10.1007/s40042-022-00497-9/fulltext.html

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6

Academic Journal

Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array.

المؤلفون: Kim, Hea‐Jee, Woo, Dae‐Seong, Jin, Soo‐Min, Kwon, Hyo‐Jun, Kwon, Ki‐Hyun, Kim, Dong‐Won, Park, Dong‐Hyun, Kim, Dong‐Eon, Jin, Hong‐Uk, Choi, Hyun‐Do, Shim, Tae‐Hun, Park, Jea‐Gun

المصدر: Advanced Materials; 10/6/2022, Vol. 34 Issue 40, p1-15, 15p

7

Academic Journal

Enhancement of electrical characteristics and reliability of CuGeS2/GeS2-based super-linear-threshold-switching device by insertion of TiN liner.

المؤلفون: Kim, Hea-Jee, Kwon, Hyo-Jun, Park, Dong-Hyun, Park, Jea-Gun

المصدر: Journal of the Korean Physical Society; Jun2022, Vol. 80 Issue 12, p1076-1080, 5p

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8

Academic Journal

An electroforming-free mechanism for Cu 2 O solid-electrolyte-based conductive-bridge random access memory (CBRAM)

المؤلفون: Kwon, Ki-Hyun, Kim, Dong-Won, Kim, Hea-Jee, Jin, Soo-Min, Woo, Dae-Seong, Park, Sang-Hong, Park, Jea-Gun

المساهمون: Korea Evaluation Institute of Industrial Technology

المصدر: Journal of Materials Chemistry C ; volume 8, issue 24, page 8125-8134 ; ISSN 2050-7526 2050-7534

الاتاحة: http://dx.doi.org/10.1039/d0tc01325k
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC01325K

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9

Academic Journal

An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM).

المؤلفون: Kwon, Ki-Hyun, Kim, Dong-Won, Kim, Hea-Jee, Jin, Soo-Min, Woo, Dae-Seong, Park, Sang-Hong, Park, Jea-Gun

المصدر: Journal of Materials Chemistry C; 6/28/2020, Vol. 8 Issue 24, p8125-8134, 10p

10

Academic Journal

Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation.

المؤلفون: Jin, Soo‐Min, Kang, Shin‐Young, Kim, Hea‐Jee, Lee, Ju‐Young, Nam, In‐Ho, Shim, Tae‐Hun, Song, Yun‐Heub, Park, Jea‐Gun

المصدر: Electronics Letters (Wiley-Blackwell); Jan2022, Vol. 58 Issue 1, p38-40, 3p

مصطلحات موضوعية: SPUTTERING (Physics), PHASE change memory, SEMICONDUCTOR storage devices, SUPERLATTICES, SPUTTER deposition

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11

Academic Journal

Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner.

المؤلفون: Lee, Jong-Sun, Kim, Dong-Won, Kim, Hea-Jee, Jin, Soo-Min, Song, Myung-Jin, Kwon, Ki-Hyun, Park, Jea-Gun, Jalalah, Mohammed, Al-Hajry, Ali

المصدر: Journal of the Korean Physical Society; Jan2018, Vol. 72 Issue 1, p116-121, 6p

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