المؤلفون: Sohatsky, Alexander S., Komarova, Diana A., Nguyen, Tiep V., Skuratov, Vladimir A., Mitrofanov, Semyon V., Khumalo, Zakhelumuzi M., Mtshali, Christopher, Nkosi, Mlungisi, Herman O'Connell, Jacques

المساهمون: Joint Institute for Nuclear Research

المصدر: Journal of Nuclear Materials ; volume 606, page 155601 ; ISSN 0022-3115

الاتاحة: https://doi.org/10.1016/j.jnucmat.2024.155601
https://api.elsevier.com/content/article/PII:S0022311524007025?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022311524007025?httpAccept=text/plain

المؤلفون: Madito, Moshawe J., Hlatshwayo, Thulani Thokozani, Skuratov, Vladimir A., Mtshali, Christopher B., Manyala, Ncholu I., Khumalo, Zakhelumuzi M.

مصطلحات موضوعية: Rutherford backscattering spectrometry (RBS), Swift heavy ion (SHI), Scanning near-field optical microscopy (SNOM), 4H-SiC, Depth profiles, Xe ions, Silicon carbide, Epitaxial layer, Stopping and range of ions in matter (SRIM)

Relation: http://hdl.handle.net/2263/71114; Madito, M.J., Hlatshwayo, T.T., Skuratov, V.A. et al. 2019, 'Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC', Applied Surface Science, vol. 493, pp. 1291-1298.; 0169-4332 (print); 1873-5584 (online)

الاتاحة: http://hdl.handle.net/2263/71114
https://doi.org/10.1016/j.apsusc.2019.07.147