المؤلفون: Sobolev, N. A.¹ (AUTHOR) nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E.¹ (AUTHOR), Shtel'makh, K. F.¹ (AUTHOR), Aruev, P. N.¹ (AUTHOR), Zabrodskiy, V. V.¹ (AUTHOR), Shek, E. I.¹ (AUTHOR)

المصدر: Semiconductors. Jul2023, Vol. 57 Issue 7, p343-346. 4p.

مصطلحات موضوعية: *LIGHT emitting diodes, *SILICON diodes, *LUMINESCENCE, *ION implantation, *CHLORINE, *ELECTROLUMINESCENCE

المؤلفون: Sobolev, N. A.¹ (AUTHOR) nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E.¹ (AUTHOR), Shtel'makh, K. F.¹ (AUTHOR), Shek, E. I.¹ (AUTHOR), Sakharov, V. I.¹ (AUTHOR), Serenkov, I. T.¹ (AUTHOR)

المصدر: Semiconductors. May2023, Vol. 57 Issue 5, p268-271. 4p.

مصطلحات موضوعية: *INDUSTRIAL contamination, *SILICON, *LIQUID helium, *PHOTOLUMINESCENCE

المؤلفون: Sobolev, N. A.¹ (AUTHOR) nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E.¹ (AUTHOR), Shtel'makh, K. F.¹ (AUTHOR), Aruev, P. N.¹ (AUTHOR), Zabrodskiy, V. V.¹ (AUTHOR), Shek, E. I.¹ (AUTHOR)

المصدر: Semiconductors. Mar2023, Vol. 57 Issue 3, p172-176. 5p.

مصطلحات موضوعية: *SILICON diodes, *ELECTROLUMINESCENCE, *ION implantation, *OXYGEN, *SCREW dislocations, *TEMPERATURE, *LIGHT emitting diodes

المؤلفون: null Shek E. I., null Zabrodskiy V. V., null Aruev P. N., null Shtel’makh K. F., null Kalyadin A. E., null Sobolev N. A.

المصدر: Semiconductors. 56:685

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bbc6bd2818898fdb020924e2eeff6a06
https://doi.org/10.21883/sc.2022.09.54135.9917

المؤلفون: Sobolev, N. A.¹ (AUTHOR) nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E.¹ (AUTHOR), Shtel’makh, K. F.¹ (AUTHOR), Shek, E. I.¹ (AUTHOR)

المصدر: Semiconductors. Dec2021, Vol. 55 Issue 12, p891-894. 4p.

المؤلفون: Sobolev, N. A.¹ (AUTHOR) nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E.¹ (AUTHOR), Feklisova, O. V.² (AUTHOR), Yakimov, E. B.² (AUTHOR)

المصدر: Semiconductors. Jul2021, Vol. 55 Issue 7, p633-636. 4p.

مصطلحات موضوعية: *LUMINESCENCE, *SILICON, *DISLOCATION density, *PHOTOLUMINESCENCE

المؤلفون: Vdovin, V. I., Fedina, L. I., Gutakovskii, A. K., Kalyadin, A. E., Shek, E. I., Shtel'makh, K. F., Sobolev, N. A.

المصدر: Crystallography Reports; Jul2021, Vol. 66 Issue 4, p625-635, 11p

مصطلحات موضوعية: LUMINESCENCE, TRANSMISSION electron microscopy

المؤلفون: Kalyadin, A. E.¹ (AUTHOR), Shtel'makh, K. F.¹ (AUTHOR), Aruev, P. N.¹ (AUTHOR), Zabrodskii, V. V.¹ (AUTHOR), Karabeshkin, K. V.¹ (AUTHOR), Shek, E. I.¹ (AUTHOR), Sobolev, N. A.¹ (AUTHOR) nick@sobolev.ioffe.rssi.ru

المصدر: Semiconductors. Jun2020, Vol. 54 Issue 6, p687-690. 4p.

مصطلحات موضوعية: *LIGHT emitting diodes, *SILICON diodes, *DENSITY currents, *LOW temperatures, *ACTIVATION energy, *LUMINESCENCE, *RUTHERFORD backscattering spectrometry

المؤلفون: Sobolev, N. A., Kalyadin, A. E., Shek, E. I., Shtel‘makh, K. F., Vdovin, V. I., Gutakovskii, A. K., Fedina, L. I.

المساهمون: Russian Science Foundation

المصدر: physica status solidi (a) ; volume 214, issue 7 ; ISSN 1862-6300 1862-6319

الاتاحة: http://dx.doi.org/10.1002/pssa.201700317
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.201700317
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700317
https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pssa.201700317

المؤلفون: Sobolev, N. A., Aruev, P. N., Kalyadin, A. E., Shek, E. I., Zabrodskiy, V. V., Loshachenko, A. S., Shtel`makh, K. F., Vdovin, V. I., Xiang, Luelue, Yang, Deren

المصدر: AIP Conference Proceedings ; page 90-93 ; ISSN 0094-243X

الاتاحة: http://dx.doi.org/10.1063/1.4865611

المؤلفون: Sobolev, N. A., Sakharov, V. I., Serenkov, I. T., Bondarev, A. D., Karabeshkin, K. V., Fomin, E. V., Kalyadin, A. E., Mikoushkin, V. M., Shek, E. I., Sherstnev, E. V.

المصدر: Semiconductors; Apr2019, Vol. 53 Issue 4, p415-418, 4p

مصطلحات موضوعية: ION implantation, ANNEALING of metals, EPITAXIAL layers, SURFACE structure, AUDITING standards, NITROGEN plasmas

المؤلفون: Sobolev, N. A.¹ (AUTHOR) nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E.¹ (AUTHOR), Sakharov, V. I.¹ (AUTHOR), Serenkov, I. T.¹ (AUTHOR), Shek, E. I.¹ (AUTHOR), Parshin, E. O.² (AUTHOR), Melesov, N. S.² (AUTHOR), Simakin, C. G.² (AUTHOR)

المصدر: Semiconductors. Feb2019, Vol. 53 Issue 2, p156-159. 4p.

مصطلحات موضوعية: *GERMANIUM, *LUMINESCENCE, *PHOTOLUMINESCENCE, *IONS, *CHLORINE, *SOLID solutions, *SILICON

المؤلفون: Strel'chuk, Anatoly M., Kalyadin, Anton E., Lebedev, Alexander A., Kozlovski, Vitalii V., Romanov, Leonid P., Petrov, Victor A.

المصدر: Materials Science Forum; June 2018, Vol. 924 Issue: 1 p257-260, 4p

المؤلفون: Sobolev, N. A., Aleksandrov, O. V., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Kalyadin, A. E., Parshin, E. O., Melesov, N. S.

المصدر: Semiconductors; Feb2019, Vol. 53 Issue 2, p153-155, 3p

مصطلحات موضوعية: GERMANIUM, SILICON, IONS, AMORPHIZATION, ANNEALING of metals, SEMIMETALS

المؤلفون: Sobolev, N. A.¹ nick@sobolev.ioffe.rssi.ru, Kalyadin, A. E.¹, Karabeshkin, K. V.¹, Kyutt, R. N.¹, Mikushkin, V. M.¹, Shek, E. I.¹, Sherstnev, E. V.¹, Vdovin, V. I.²

المصدر: Technical Physics Letters. Sep2018, Vol. 44 Issue 9, p817-819. 3p.

مصطلحات موضوعية: *X-ray diffraction, *TRANSMISSION electron microscopy, *ION implantation, *CRYSTAL structure, *THIN films

المؤلفون: Sobolev, N. A., Ber, B. Ya., Kazantsev, D. Yu., Kalyadin, A. E., Karabeshkin, K. V., Mikoushkin, V. M., Sakharov, V. I., Serenkov, I. T., Shek, E. I., Sherstnev, E. V., Shmidt, N. M.

المصدر: Technical Physics Letters; Jul2018, Vol. 44 Issue 7, p574-576, 3p

مصطلحات موضوعية: ION implantation, POSITRON annihilation, GALLIUM arsenide, X-ray diffraction, ELECTROCHEMICAL analysis