المؤلفون: Hye-Jin Oh, Yoon-Seo Kim, Hyun-Jun Jeong, Sunhee Lee, Joon Seok Park, Jin-Seong Park

المصدر: Journal of Information Display, Vol 25, Iss 3, Pp 295-303 (2024)

مصطلحات موضوعية: Bilayer structure, thin-film transistor (TFT), plasma-enhanced atomic layer deposition (PEALD), compositional control, mobility-stability trade-off, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1598-0316; https://doaj.org/toc/2158-1606

URL الوصول: https://doaj.org/article/c60b76b489494750a871d21e03977df0

المؤلفون: Won-Bum Lee, Yoon-Seo Kim, Jin-Seong Park

المصدر: Journal of Information Display, Vol 25, Iss 2, Pp 179-185 (2024)

مصطلحات موضوعية: Atomic layer deposition (ALD), thin-film transistors (TFT), multi-channel TFT, subthreshold swing control, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1598-0316; https://doaj.org/toc/2158-1606

URL الوصول: https://doaj.org/article/dc6ca49a2eca4831b6191939b7c78334

المؤلفون: Yoon‐Seo Kim, Taewon Hwang, Hye‐Jin Oh, Joon Seok Park, Jin‐Seong Park

المصدر: Advanced Materials Interfaces, Vol 11, Iss 15, Pp n/a-n/a (2024)

مصطلحات موضوعية: gate insulator, heterogeneous, high‐reliability, InGaZnO, plasma enhanced atomic layer deposition, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/12b136e9de374860948453f7e1ab68f0

المؤلفون: Minkyeong Nam, Seungwoo Lee, Hanseok Jeong, Ara Yoon, Jin‐Seong Park, Woojin Jeon

المصدر: Advanced Materials Interfaces, Vol 11, Iss 11, Pp n/a-n/a (2024)

مصطلحات موضوعية: crystallinity, high‐k gate insulator, InGaZnO, metal–insulator–semiconductor capacitor, ZrO2, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/b8b52f41151b4e799b7ec864a1afc545

المؤلفون: Dong-Gyu Kim, Su-Hwan Choi, Won-Bum Lee, Gyeong Min Jeong, Jihyun Koh, Seunghee Lee, Bongjin Kuh, Jin-Seong Park

المصدر: Small Structures, Vol 5, Iss 2, Pp n/a-n/a (2024)

مصطلحات موضوعية: atomic layer deposition, hydrogen resistivity, oxide semiconductors, stability, thin-film transistors, vertical complementary metal-oxide-semiconductor inverter, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2688-4062

URL الوصول: https://doaj.org/article/a868ffadd599423c8a27c8edc353a19e

المؤلفون: Su-Hwan Choi, Hye-Mi Kim, Jin-Seong Park

المصدر: Journal of Information Display, Vol 24, Iss 2, Pp 119-125 (2023)

مصطلحات موضوعية: Atomic layer deposition (ALD), tin monoxide (SnO), thin-film transistors, source/drain modulation, off-current reduction, Computer engineering. Computer hardware, TK7885-7895

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1598-0316; https://doaj.org/toc/2158-1606

URL الوصول: https://doaj.org/article/109cfa94185248f894adb291f2800fcf

المؤلفون: Yoon-Seo Kim, Hye-Jin Oh, Seungki Shin, Nuri Oh, Jin-Seong Park

المصدر: Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/f5c0a6d561bf4d3598446e585d3e2656

المؤلفون: Hye‐Mi Kim, Su‐Hwan Choi, Han Uk Lee, Sung Beom Cho, Jin‐Seong Park

المصدر: Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)

مصطلحات موضوعية: atomic layer deposition, complementary metal–oxide–semiconductor, p‐type oxide semiconductor, thin‐film transistor, tin monoxide, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/b54ce56ad8ab4bc3b80b9750282b20f4

المؤلفون: TaeHyun Hong, Yoon‐Seo Kim, Su‐Hwan Choi, Jun Hyung Lim, Jin‐Seong Park

المصدر: Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)

مصطلحات موضوعية: chemical composition fraction, crystallinity, indium gallium zinc oxide (IGZO), plasma‐enhanced atomic layer deposition (PEALD), thin‐film transistors (TFT), Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2199-160X

URL الوصول: https://doaj.org/article/f2eba353224f4348bbacc4969ed637a4

المؤلفون: Hye-Mi Kim, Dong-Gyu Kim, Yoon-Seo Kim, Minseok Kim, Jin-Seong Park

المصدر: International Journal of Extreme Manufacturing, Vol 5, Iss 1, p 012006 (2023)

مصطلحات موضوعية: atomic layer deposition (ALD), oxide semiconductor, thin film transistor (TFT), Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial engineering. Management engineering, T55.4-60.8, Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2631-7990

URL الوصول: https://doaj.org/article/72a26c721403418ba3a2a36acce1ddd6

المؤلفون: Seung-Hun Song, Jong-Rae Cho, Jin-Seong Park

المصدر: Advances in Mechanical Engineering, Vol 12 (2020)

مصطلحات موضوعية: Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://doaj.org/toc/1687-8140

URL الوصول: https://doaj.org/article/29b68dfa0e6640a19daa71c3f081a5b1

المؤلفون: Jozeph Park, Hyun-Jun Jeong, Hyun-Mo Lee, Ho-Hyun Nahm, Jin-Seong Park

المصدر: Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d

المؤلفون: Wan-Ho Choi, MinJung Kim, Woojin Jeon, Jin-Seong Park

المصدر: AIP Advances, Vol 10, Iss 1, Pp 015239-015239-6 (2020)

مصطلحات موضوعية: Physics, QC1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2158-3226

URL الوصول: https://doaj.org/article/487333deae9a4727b60b83edd7f6d992

المؤلفون: Young Min Choi, Hana Lim, Ho-Nyun Lee, Young Min Park, Jin-Seong Park, Hyun-Jong Kim

المصدر: Biosensors, Vol 10, Iss 9, p 111 (2020)

مصطلحات موضوعية: polypyrrole, lactic acid, sweat, nonenzymatic, amperometric, selectivity, Biotechnology, TP248.13-248.65

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-6374/10/9/111; https://doaj.org/toc/2079-6374

URL الوصول: https://doaj.org/article/712124cb0e8f4defa96cf0bad17fc5a2

المؤلفون: Yonghui Lee, Seunghwan Lee, Gabseok Seo, Sanghyun Paek, Kyung Taek Cho, Aron J. Huckaba, Marco Calizzi, Dong‐won Choi, Jin‐Seong Park, Dongwook Lee, Hyo Joong Lee, Abdullah M. Asiri, Mohammad Khaja Nazeeruddin

المصدر: Advanced Science, Vol 5, Iss 6, Pp n/a-n/a (2018)

مصطلحات موضوعية: atomic layer deposition, passivation, perovskites, planar perovskite solar cells, SnO2 electron transporting layers, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/e865dff216b74995966da1b5537171af

المؤلفون: Jae-Hoon Kim, Jeong-Yun Kim, Jin-Seong Park, Kyeong-mi Seo, Kyung-Jin Ha, Sang-Yeol Lee, Seon-Chil Kim, Su-Kyoung Lee, Yeon-Ju Kim

المصدر: Journal of Physical Therapy Science. 2012, 24(11):1163

المؤلفون: Seongmin Hong, Jiyun Go, Jae-Hong Kim, Jinkwan Jo, Ji Won Kim, Jin Seong Park, Nayoung Ro, Gibum Yi

المصدر: Journal of Agriculture and Food Research, Vol 18, Iss , Pp 101395- (2024)

مصطلحات موضوعية: Corn, Germplasm, Endosperm, Aleurone, Agriculture (General), S1-972, Nutrition. Foods and food supply, TX341-641

Relation: http://www.sciencedirect.com/science/article/pii/S2666154324004320; https://doaj.org/toc/2666-1543; https://doaj.org/article/48f03f44f4a04c42a0155f618f9fc3eb

الاتاحة: https://doi.org/10.1016/j.jafr.2024.101395
https://doaj.org/article/48f03f44f4a04c42a0155f618f9fc3eb

المؤلفون: Su-Hwan Choi, Seong-Hwan Ryu, Dong-Gyu Kim, Jae-Hyeok Kwag, Changbong Yeon, Jaesun Jung, Young-Soo Park, Jin-Seong Park

مصطلحات موضوعية: Biophysics, Sociology, 150 mv decade, grain boundary effect, 100 ° c, th , fe , 2 , 3 mv cm, 3 , 2 , c <, 3 h, >< sub, v <, aligned c, 50 cm, 12 cm, superior large, successful research, stress conditions, oxide semiconductors, effect mobility, deposit highly, dbadmin precursor, attractive materials, area uniformity, >- axis

Relation: https://figshare.com/articles/journal_contribution/_i_c_i_Axis_Aligned_3_nm_Thick_In_sub_2_sub_O_sub_3_sub_Crystal_Using_New_Liquid_DBADMIn_Precursor_for_Highly_Scaled_FET_Beyond_the_Mobility_Stability_Trade-off/25012762

الاتاحة: https://doi.org/10.1021/acs.nanolett.3c04312.s001
https://figshare.com/articles/journal_contribution/_i_c_i_Axis_Aligned_3_nm_Thick_In_sub_2_sub_O_sub_3_sub_Crystal_Using_New_Liquid_DBADMIn_Precursor_for_Highly_Scaled_FET_Beyond_the_Mobility_Stability_Trade-off/25012762

المؤلفون: Jae-Min Sim, Su-Hwan Choi, Seong-Hwan Ryu, Ji-Ho Song, Jin-Seong Park, Yun-Heub Song

مصطلحات موضوعية: Biophysics, Space Science, Biological Sciences not elsewhere classified, Information Systems not elsewhere classified, – v curve, indium gallium oxide, 15 na ), effect transistor devices, simulation results demonstrate, achieve high mobility, proposed hc structure, gidl erase operation, si channel characteristics, high mobility, effect mobility, compatible characteristics, percolation effect, si channel, hybrid channel, thereby improving, oxygen vacancies, gidl erase, channels coexist, additional formation, 78 cm

Relation: https://figshare.com/articles/journal_contribution/High_Mobility_and_GIDL_Erase-Compatible_Characteristics_in_Hybrid_Channel_Poly-Si_IGO_for_Ultrahigh_3D_NAND_Flash_Memory_Applications/25062686

الاتاحة: https://doi.org/10.1021/acsaelm.3c01501.s001
https://figshare.com/articles/journal_contribution/High_Mobility_and_GIDL_Erase-Compatible_Characteristics_in_Hybrid_Channel_Poly-Si_IGO_for_Ultrahigh_3D_NAND_Flash_Memory_Applications/25062686

المؤلفون: Seonjun Choi, Jin-Seong Park, Myounggon Kang, Hong-sik Jung, Yun-heub Song

المصدر: Electronics, Vol 13, Iss 2, p 451 (2024)

مصطلحات موضوعية: 3D NAND, polysilicon, IGZO, erase operation, Cell-On-Peri (COP), Electronics, TK7800-8360

Relation: https://www.mdpi.com/2079-9292/13/2/451; https://doaj.org/toc/2079-9292; https://doaj.org/article/1fbcf4f326ec46f68b0e73bf0bb141d8

الاتاحة: https://doi.org/10.3390/electronics13020451
https://doaj.org/article/1fbcf4f326ec46f68b0e73bf0bb141d8