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1Academic Journal
المؤلفون: Hong, Byung Hee, Hwang, Sung Woo, Lee, Yong Yoon, Son, Maeng Ho, Ahn, Doyeol, Cho, Keun Hwi, Yeo, Kyoung Hawn, Kim, Dong W., Jin, Gyo Young, Park, Dong Gun
المساهمون: Hong, Byung Hee
مصطلحات موضوعية: DOT, Gate all around, Silicon nanowire field effect transistor, Temperature dependence
Relation: AIP Conference Proceedings, Vol.1399, pp.291-292; https://hdl.handle.net/10371/204655; 000301053000130; 2-s2.0-84862809585; 216830
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