المؤلفون: Frederick B. Mancoff, Sumio Ikegawa, Jason Allen Janesky, Sanjeev Aggarwal

المصدر: IEEE Transactions on Electron Devices. 67:1407-1419

مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Random access memory, Hardware_MEMORYSTRUCTURES, Computer science, business.industry, Spin-transfer torque, Electrical engineering, 01 natural sciences, Electronic, Optical and Magnetic Materials, Power (physics), Data integrity, 0103 physical sciences, Electrical and Electronic Engineering, Data retention, business, Internet of Things, Magnetic switching

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9fbc1576f1138f9c3a784b2239cbf126
https://doi.org/10.1109/ted.2020.2965403

المؤلفون: Dietmar Gogl, Greg Viot, Jieming Qi, Xiaohu Zhang, Frederick Neumeyer, William Meadows, Barkatullah Javed S, Tom Andre, Syed M. Alam, Mark F. Deherrera, Bryan Kang, Halbert S. Lin, Jason Allen Janesky, Yaojun Zhang, Forhad Hossain

المصدر: 2017 IEEE International Memory Workshop (IMW).

مصطلحات موضوعية: 010302 applied physics, Tunnel magnetoresistance, Magnetoresistive random-access memory, Engineering, business.industry, 0103 physical sciences, Electrical engineering, Electronic engineering, business, 01 natural sciences

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d6b468f7662274e52b0051c4dbb10423
https://doi.org/10.1109/imw.2017.7939104

المؤلفون: Mark A. Durlam, Jijun Sun, Mark F. Deherrera, Renu W. Dave, Gregory W. Grynkewich, Srinivas V. Pietambaram, Johan Åkerman, J.M. Slaughter, Kenneth H. Smith, Bradley N. Engel, Saied N. Tehrani, N. D. Rizzo, Brian R. Butcher, Jason Allen Janesky

المصدر: IEEE Transactions on Magnetics. 41:132-136

مصطلحات موضوعية: Bit cell, Magnetoresistive random-access memory, Computer science, Process (computing), Magnetic storage, Electronic, Optical and Magnetic Materials, law.invention, Bit (horse), Tunnel magnetoresistance, law, Electronic engineering, Commutation, Electrical and Electronic Engineering, Micromagnetics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::789b241ceda36f221bc524eaeeae684f
https://doi.org/10.1109/tmag.2004.840847

المؤلفون: Brian R. Butcher, Mark F. Deherrera, Johan Åkerman, Jon M. Slaughter, M. Durlam, Gregory W. Grynkewich, Renu W. Dave, J. J. Sun, Srinivas V. Pietambaram, Bradley N. Engel, N. D. Rizzo, Saied N. Tehrani, Jason Allen Janesky, P. Brown, Kenneth H. Smith

المصدر: Scopus-Elsevier

مصطلحات موضوعية: Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, Condensed Matter Physics, Flash memory, Non-volatile memory, Tunnel magnetoresistance, Hardware_GENERAL, Memory cell, Magnetic memory, Microelectronics, General Materials Science, Static random-access memory, Physical and Theoretical Chemistry, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37838f923200481aa7ceb84c1fce4c92
https://doi.org/10.1557/mrs2004.234

المؤلفون: Jason Allen Janesky, M. Durlam, Saied N. Tehrani, M. Griswold, P. Brown, Earl D. Fuchs, Johan Åkerman, Mark F. Deherrera, D. Gajewski, Joseph J. Nahas

المصدر: IEEE Transactions on Device and Materials Reliability. 4:428-435

مصطلحات موضوعية: Magnetoresistive random-access memory, Materials science, Magnetoresistance, Dielectric strength, Magnetic storage, Time-dependent gate oxide breakdown, Electromigration, Electronic, Optical and Magnetic Materials, law.invention, law, Tunnel junction, Electronic engineering, Electrical and Electronic Engineering, Data retention, Safety, Risk, Reliability and Quality

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ed11148b5eacd52b2addb271d292224f
https://doi.org/10.1109/tdmr.2004.837608

المؤلفون: Renu W. Dave, J.M. Slaughter, Jijun Sun, Srinivas V. Pietambaram, Jason Allen Janesky, G. Steiner

المصدر: IEEE Transactions on Magnetics. 40:2619-2621

مصطلحات موضوعية: Coupling, Magnetoresistive random-access memory, Materials science, Condensed matter physics, Magnetic storage, Giant magnetoresistance, Electronic, Optical and Magnetic Materials, Amorphous solid, law.invention, Diffusion process, law, Antiferromagnetism, Crystallite, Electrical and Electronic Engineering

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::de6d1055dc5b8c284a55176a172c1a9e
https://doi.org/10.1109/tmag.2004.834209

المؤلفون: Mark F. Deherrera, N. D. Rizzo, Jason Allen Janesky, Bradley N. Engel

المصدر: INTERMAG 2006 - IEEE International Magnetics Conference.

مصطلحات موضوعية: Magnetoresistive random-access memory, Materials science, business.industry, Magnetic storage, Magnetic separation, Magnetic flux, law.invention, Stack (abstract data type), CMOS, law, Optoelectronics, Node (circuits), business, Energy (signal processing)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6101c8f9a3545311f273bc47377f690b
https://doi.org/10.1109/intmag.2006.376125

المؤلفون: M. Martin, H. Mekonnen, Johan Åkerman, Joseph J. Nahas, M. Griswold, Srinivas V. Pietambaram, Saied N. Tehrani, Jason Allen Janesky, D. Gajewski, P. Brown, J.M. Slaughter

المصدر: Scopus-Elsevier

مصطلحات موضوعية: Non-volatile memory, Magnetoresistive random-access memory, Reliability (semiconductor), Dielectric strength, CMOS, Computer science, Megabit, business.industry, Electrical engineering, Data retention, business, Electromigration

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b2fc7191071a7403a89ed9d47bf85b1
https://doi.org/10.1109/relphy.2005.1493078

المؤلفون: K. Smith, C. Frey, B. Feil, T. Ditewig, J. J. Sun, J. Chan, R. Fournel, R. Cuppens, Mark A. Durlam, D. Galpin, L. Wise, Saied N. Tehrani, M. Lien, Mark F. Deherrera, J. Tamim, Thomas W. Andre, J. Calder, Gloria Kerszykowski, Joseph J. Nahas, K. Nagel, R. Williams, B. Martino, Bradley J. Garni, S. Zoll, Jason Allen Janesky, Chitra K. Subramanian, J. Martin, Renu W. Dave, F. List, B.N. Engel, P. Brown, G. Grynkewich

المصدر: Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

مصطلحات موضوعية: Physics, Bit cell, Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, Bit array, Nanoelectronics, Hardware_GENERAL, Memory cell, Tunnel junction, Memory architecture, Scalability, Hardware_INTEGRATEDCIRCUITS, Hardware_ARITHMETICANDLOGICSTRUCTURES, business, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b774146b05cdf49fe162d07dbfe6101b
https://doi.org/10.1109/.2005.1469261

المؤلفون: B.N. Engel, J. J. Sun, Frederick B. Mancoff, Jason Allen Janesky, Saied N. Tehrani, Srinivas V. Pietambaram, Renu W. Dave, Nicholas D. Rizzo, Mark A. Durlam, J.M. Slaughter

المصدر: Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.

مصطلحات موضوعية: Magnetoresistive random-access memory, Materials science, Nanotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6aac8ba36bff02caf327dbbea5be8676
https://doi.org/10.7567/ssdm.2005.h-9-1

المؤلفون: Jon M. Slaughter, Johan { AA}kerman, Brad Engel, Mark A. Durlam, Jason Allen Janesky, Saied N. Tehrani, Fred Mancoff, Mark F. Deherrera

مصطلحات موضوعية: Bit cell, Tunnel magnetoresistance, Magnetization, Magnetoresistive random-access memory, Engineering, Ferromagnetism, business.industry, Miniaturization, Electrical engineering, Optoelectronics, business, Scaling, Magnetic field

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::07e0e95d564a1be39b01152e935a17d6
https://doi.org/10.1016/b978-012088487-2/50006-6

المؤلفون: Kenneth H. Smith, Jijun Sun, John E. Martin, Brad Engel, Renu W. Dave, Mark Griswold, Jason Allen Janesky, Philip Brown, Nick Rizzo, Srinivas V. Pietambaram, Joseph J. Nahas, Jon M. Slaughter, Mark A. Durlam, Earl D. Fuchs, Mark F. Deherrera, Greg Grynkewich, Brian R. Butcher, Saied N. Tehrani, Johan Åkerman

المصدر: Scopus-Elsevier

مصطلحات موضوعية: Magnetoresistive random-access memory, Reliability (semiconductor), Materials science, Magnetoresistance, Dielectric strength, business.industry, Tunnel junction, Orders of magnitude (temperature), Optoelectronics, Time-dependent gate oxide breakdown, Data retention, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12895356b62fc49f2c9a3fb46d831ce5
http://www.scopus.com/inward/record.url?eid=2-s2.0-34249887645&partnerID=MN8TOARS