نتائج البحث - "Jae‑Moo Kim"

1

Academic Journal

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

المؤلفون: Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim

المصدر: Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d

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2

Academic Journal

Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

المؤلفون: Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim

المصدر: Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02

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3

Academic Journal

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity

المؤلفون: Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim

المصدر: Materials; Volume 15; Issue 23; Pages: 8415

مصطلحات موضوعية: AlGaN/GaN, self-heating phenomenon, modeling, substrates, thermal resistance

وصف الملف: application/pdf

Relation: https://dx.doi.org/10.3390/ma15238415

الاتاحة: https://doi.org/10.3390/ma15238415

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4

Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment

المؤلفون: Walid Amir, Ju-Won Shin, Ki-Yong Shin, Surajit Chakraborty, Chu-Young Cho, Jae-Moo Kim, Sang-Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim, Tae-Woo Kim

المصدر: IEEE Transactions on Electron Devices. 70:2988-2993

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1b5fbf60a499b5e14c02c350cf6d8d8d
https://doi.org/10.1109/ted.2023.3268626

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5

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

المؤلفون: Kyungho Park, Jae-Moo Kim, Walid Amir, Tae-Woo Kim, Ki-Yong Shin, Hiroki Sugiyama, Chu-Young Cho, Takuya Hoshi, Takuya Tsutsumi, Hideaki Matsuzaki, Ju-Won Shin

المصدر: Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Scientific Reports

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60362455c4bce92f49e1b352eac53f6c
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d

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6

Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

المؤلفون: Kyungho Park, Takuya Hoshi, Ju‑Won Shin, Hiroki Sugiyama, Walid Amir, Ki‑Yong Shin, Jae‑Moo Kim, Takuya Tsutsumi, Tae-Woo Kim, Chu-Young Cho, Hideaki Matsuzaki

المصدر: Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)

مصطلحات موضوعية: Multidisciplinary, Materials science, business.industry, Science, Transistor, law.invention, Trap (computing), law, Optoelectronics, Medicine, business, High electron

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::171ed0608e185c123964e637f50e1e44
https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02

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7

Investigation of Simulated and Measured Program Characteristicsin 4-bit/cell Charge-trap Flash (CTF) Memories

المؤلفون: Jae Moo Kim, Yu Jeong Seo, Ho Myoung An, Dae Hwan Kim, Tae Geun Kim, Sung Wook Park

المصدر: Journal of the Korean Physical Society. 55:367-371

مصطلحات موضوعية: Work (thermodynamics), Materials science, business.industry, Charge trap flash, General Physics and Astronomy, Optoelectronics, Charge (physics), 4-bit, business, Voltage, Threshold voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cc70abb9ae3c0e8e983bba8e32555e0f
https://doi.org/10.3938/jkps.55.367

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8

Reduction of the Gate Leakage Current in Binary-trench-insulatedGate AlGaN/GaN High-electron-mobility Transistors

المؤلفون: Kang Min Jung, Tae Geun Kim, Cheol Koo Hahn, Su Jin Kim, Dong Ho Kim, Hong Goo Choi, Jae Moo Kim

المصدر: Journal of the Korean Physical Society. 55:356-361

مصطلحات موضوعية: Materials science, business.industry, Transconductance, Transistor, Gate dielectric, General Physics and Astronomy, Time-dependent gate oxide breakdown, Dielectric, High-electron-mobility transistor, law.invention, Gate oxide, law, Optoelectronics, business, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::57f04d2bbf8c5cf26a6760e6f6218ffd
https://doi.org/10.3938/jkps.55.356

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9

Reduction of Buffer Leakage in AlGaN/GaN HEMTs with an AlGaN Current-Blocking Barrier by using a Two-Dimensional Simulation

المؤلفون: Dong Ho Kim, Tae Geun Kim, Su Jin Kim, Cheol Koo Hahn, Hong Goo Choi, Jae Moo Kim

المصدر: Journal of the Korean Physical Society. 53:2572-2577

مصطلحات موضوعية: Materials science, business.industry, General Physics and Astronomy, Optoelectronics, Dimensional simulation, High-electron-mobility transistor, Double heterostructure, business, Buffer (optical fiber), Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::42e5e09687a894a0824110fb784445c1
https://doi.org/10.3938/jkps.53.2572

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