المؤلفون: Cioni M., Giorgino G., Chini A., Parisi A., Cappellini G., Miccoli C., Castagna M. E., Tringali C., Iucolano F.

المساهمون: Cioni, M., Giorgino, G., Chini, A., Parisi, A., Cappellini, G., Miccoli, C., Castagna, M. E., Tringali, C., Iucolano, F.

مصطلحات موضوعية: GaN, HEMT, hot-electron, ON, degradation, TH, drift

Relation: volume:5; issue:3; firstpage:132; lastpage:144; journal:ELECTRONIC MATERIALS; https://hdl.handle.net/11380/1363386

الاتاحة: https://hdl.handle.net/11380/1363386
https://doi.org/10.3390/electronicmat5030009

المؤلفون: Zagni N., Verzellesi G., Bertacchini A., Borgarino M., Iucolano F., Chini A.

المساهمون: Zagni, N., Verzellesi, G., Bertacchini, A., Borgarino, M., Iucolano, F., Chini, A.

مصطلحات موضوعية: GaN, HEMT, on resistance, electron and hole trapping

Relation: volume:45; issue:5; firstpage:801; lastpage:804; journal:IEEE ELECTRON DEVICE LETTERS; https://hdl.handle.net/11380/1337211; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85187984449; https://ieeexplore.ieee.org/document/10466553?source=authoralert

الاتاحة: https://hdl.handle.net/11380/1337211
https://doi.org/10.1109/LED.2024.3375912
https://ieeexplore.ieee.org/document/10466553?source=authoralert

المؤلفون: Greco, G., Fiorenza, P., Giannazzo, F., Vivona, M., Venuto, C., Iucolano, F., Roccaforte, F.

المساهمون: Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU) through the European Project Gallium Nitride for Advanced Power Applications

المصدر: IEEE Electron Device Letters ; volume 45, issue 10, page 1724-1727 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2024.3438807
http://xplorestaging.ieee.org/ielx8/55/10701574/10623468.pdf?arnumber=10623468

المؤلفون: Giorgino G., Cioni M., Miccoli C., Gervasi L., Giuffrida M. F. S., Ruvolo M., Castagna M. E., Cappellini G., Luongo G., Moschetti M., Constant A., Tringali C., Iucolano F., Chini A.

المساهمون: Giorgino, G., Cioni, M., Miccoli, C., Gervasi, L., Giuffrida, M. F. S., Ruvolo, M., Castagna, M. E., Cappellini, G., Luongo, G., Moschetti, M., Constant, A., Tringali, C., Iucolano, F., Chini, A.

مصطلحات موضوعية: Aluminum content, Dynamic R, ON, GaN HEMTS, HTRB, Magnesium doping, Normally-off, Normally-on, Output power, p-GaN activation, Power application, Temperature behaviour, Trapping mechanisms, Off-state stress, RF application

Relation: volume:6; firstpage:1; lastpage:9; journal:E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY; https://hdl.handle.net/11380/1332186; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85176244577

الاتاحة: https://hdl.handle.net/11380/1332186
https://doi.org/10.1016/j.prime.2023.100338

المؤلفون: Crescentini M., Marchesi M., Gibiino G. P., Ion L. P., Castagna E., Iucolano F.

المساهمون: Crescentini M., Marchesi M., Gibiino G.P., Ion L.P., Castagna E., Iucolano F.

مصطلحات موضوعية: current sensor, gallium nitride (GaN), Hall effect, Magnetic sensor, magnetic sensors

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001071215100002; volume:7; issue:10; firstpage:1; lastpage:4; numberofpages:4; journal:IEEE SENSORS LETTERS; https://hdl.handle.net/11585/961527; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85171548353; https://ieeexplore.ieee.org/document/10244093

الاتاحة: https://hdl.handle.net/11585/961527
https://doi.org/10.1109/LSENS.2023.3312989
https://ieeexplore.ieee.org/document/10244093

المؤلفون: Boito, M., Fregolent, M., De Santi, C., Abbisogni, A., Smerzi, S., Rossetto, I., Iucolano, F., Meneghesso, G., Zanoni, E., Meneghini, M.

المساهمون: Boito, M., Fregolent, M., De Santi, C., Abbisogni, A., Smerzi, S., Rossetto, I., Iucolano, F., Meneghesso, G., Zanoni, E., Meneghini, M.

مصطلحات موضوعية: Dynamic on-resistance, GaN HEMT, Hard switching

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001229691100084; ispartofbook:IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2024 PROCEEDINGS; IEEE International Reliability Physics Symposium (IRPS 2024); serie:IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS; https://hdl.handle.net/11577/3523449; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85194047700

الاتاحة: https://hdl.handle.net/11577/3523449
https://doi.org/10.1109/irps48228.2024.10529407

المؤلفون: Le Royer, Cyrille, Mohamad, Blend, Biscarrat, Jérôme, Vauche, Laura, Escoffier, René, Buckley, Julien, Becu, Stéphane, Riat, Rémi, Gillot, Charlotte, Charles, Matthew, Ruel, Simon, Pimenta-Barros, Patricia, Posseme, Nicolas, Besson, Pascal, Boudaa, Frederic, Vannuffel, Cyril, Vandendaele, William, Viey, Abygaël, Krakovinsky, Alexis, Jaud, Marie-Anne, Modica, R., Iucolano, F., Le Tiec, Rémi, Levi, Shimon, Orsatelli, Marc, Gwoziecki, Romain, Sousa, Véronique

المساهمون: Département Composants Silicium (DCOS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département Plate-Forme Technologique (DPFT), STMicroelectronics Catania (ST-CATANIA), PDC business group, Applied Materials, CEA Tech Occitanie (DOCC), CEA Tech en régions (CEA-TECH-Reg), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010)

المصدر: ISPSD 2022 - IEEE 34th International Symposium on Power Semiconductor Devices and ICs ; https://cea.hal.science/cea-04577370 ; ISPSD 2022 - IEEE 34th International Symposium on Power Semiconductor Devices and ICs, May 2022, Vancouver, Canada. 2022, ⟨10.1109/ISPSD49238.2022.9813672⟩

مصطلحات موضوعية: [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

جغرافية الموضوع: Vancouver

Time: Vancouver, Canada

Relation: cea-04577370; https://cea.hal.science/cea-04577370; https://cea.hal.science/cea-04577370/document; https://cea.hal.science/cea-04577370/file/ISPSD%202022%20Le%20Royer%20v03.pdf

الاتاحة: https://cea.hal.science/cea-04577370
https://cea.hal.science/cea-04577370/document
https://cea.hal.science/cea-04577370/file/ISPSD%202022%20Le%20Royer%20v03.pdf
https://doi.org/10.1109/ISPSD49238.2022.9813672

المؤلفون: Cappellini, G., Cioni, M., Giorgino, G., Chini, A., Zagni, N., Modica, L., Luongo, G., Miccoli, C., Castagna, M. E., Tringali, C., Iucolano, F.

المصدر: 2024 15th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) ; page 9-13

الاتاحة: https://doi.org/10.1109/asdam63148.2024.10844629
http://xplorestaging.ieee.org/ielx8/10844587/10844596/10844629.pdf?arnumber=10844629

المؤلفون: Colella A., Capasso I., Iucolano F.

المساهمون: Colella, A., Capasso, I., Iucolano, F.

مصطلحات موضوعية: Campanian ignimbrite, Inorganic stone consolidant, Lithium silicate, Nano-silica, Neapolitan yellow tuff

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000662650100001; volume:14; issue:10; firstpage:2513; numberofpages:21; journal:MATERIALS; http://hdl.handle.net/11588/874998; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85107531259; https://www.mdpi.com/1996-1944/14/10/2513/htm

الاتاحة: http://hdl.handle.net/11588/874998
https://doi.org/10.3390/ma14102513
https://www.mdpi.com/1996-1944/14/10/2513/htm

المؤلفون: Greco, G., Di Franco, S., Lo Nigro, R., Bongiorno, C., Spera, M., Badalà, P., Iucolano, F., Roccaforte, F.

المساهمون: Ministero dell'Università e della Ricerca

المصدر: Applied Physics Letters ; volume 124, issue 1 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/5.0180862
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0180862/19837548/012103_1_5.0180862.pdf

المؤلفون: Cioni M., Giorgino G., Chini A., Marletta G., Miccoli C., Castagna M. E., Luongo G., Moschetti M., Tringali C., Iucolano F.

المساهمون: Cioni, M., Giorgino, G., Chini, A., Marletta, G., Miccoli, C., Castagna, M. E., Luongo, G., Moschetti, M., Tringali, C., Iucolano, F.

مصطلحات موضوعية: 2-DEG density, Back-Effect, GaN HEMT, RON-degradation, Vertical Leakage, VTH drift

Relation: info:eu-repo/semantics/altIdentifier/isbn/979-8-3503-3713-6; ispartofbook:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; 10th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023; https://hdl.handle.net/11380/1332187; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85183585579

الاتاحة: https://hdl.handle.net/11380/1332187
https://doi.org/10.1109/WiPDA58524.2023.10382224

المؤلفون: Cioni M., Giorgino G., Chini A., Parisi A., Cappellini G., Modica L., Luongo G., Miccoli C., Castagna M. E., Moschetti M., Tringali C., Iucolano F.

المساهمون: Cioni, M., Giorgino, G., Chini, A., Parisi, A., Cappellini, G., Modica, L., Luongo, G., Miccoli, C., Castagna, M. E., Moschetti, M., Tringali, C., Iucolano, F.

مصطلحات موضوعية: Drain leakage, Dynamic-R, ON, GaN HEMT, Gate leakage, TH, drift

Relation: info:eu-repo/semantics/altIdentifier/isbn/9788887237573; ispartofbook:2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive, AEIT AUTOMOTIVE 2023; 2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive, AEIT AUTOMOTIVE 2023; https://hdl.handle.net/11380/1332188; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85170649255

الاتاحة: https://hdl.handle.net/11380/1332188

المؤلفون: Capasso I., Colella A., Iucolano F.

المساهمون: Capasso, I., Colella, A., Iucolano, F.

مصطلحات موضوعية: Alkaline silicate, Inorganic stone consolidant, Nano-silica, Vicenza stone

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:001012812700001; volume:68; firstpage:106124; journal:JOURNAL OF BUILDING ENGINEERING; https://hdl.handle.net/11564/799594; https://www.sciencedirect.com/science/article/pii/S2352710223003030

الاتاحة: https://hdl.handle.net/11564/799594
https://doi.org/10.1016/j.jobe.2023.106124
https://www.sciencedirect.com/science/article/pii/S2352710223003030

المؤلفون: Cioni, M., Giorgino, G., Chini, A., Miccoli, C., Castagna, M. E., Moschetti, M., Tringali, C., Iucolano, F.

المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48203.2023.10117585
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117585.pdf?arnumber=10117585

المؤلفون: Vandendaele, W., Leurquin, C., Lavieville, R., Jaud, M.A, Viey, A.G., Gwoziecki, R., Mohamad, B., Nowak, E., Constant, A., Iucolano, F.

المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48203.2023.10118180
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118180.pdf?arnumber=10118180

المؤلفون: Zagni N., Cioni M., Castagna M. E., Moschetti M., Iucolano F., Verzellesi G., Chini A.

المساهمون: Zagni, N., Cioni, M., Castagna, M. E., Moschetti, M., Iucolano, F., Verzellesi, G., Chini, A.

مصطلحات موضوعية: Gate Stre, NBTI, p-GaN HEMT, PBTI, TH, instability, dynamic R, ON

Relation: info:eu-repo/semantics/altIdentifier/isbn/9781665489003; ispartofbook:Proc. of the 9th IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA); 9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022; firstpage:31; lastpage:34; https://hdl.handle.net/11380/1295213; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85143774821

الاتاحة: https://hdl.handle.net/11380/1295213
https://doi.org/10.1109/WiPDA56483.2022.9955267

المؤلفون: Roviello V., Bifulco A., Colella A., Iucolano F., Caputo D., Aronne A., Liguori B.

المساهمون: Roviello, V., Bifulco, A., Colella, A., Iucolano, F., Caputo, D., Aronne, A., Liguori, B.

مصطلحات موضوعية: vandal graffiti, anti-graffiti product, sustainable chemical method, alteration of stone material, tuff, limestone, cleaning test, spray, markers

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000752589300001; volume:14; issue:1; firstpage:575; numberofpages:14; journal:SUSTAINABILITY; http://hdl.handle.net/11588/866474; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85122260057

الاتاحة: http://hdl.handle.net/11588/866474
https://doi.org/10.3390/su14010575

المؤلفون: Leurquin, C., Vandendaele, W., Viey, A.G, Gwoziecki, R., Escoffier, R., Salot, R., Despesse, G., Iucolano, F., Modica, R., Constant, A.

المصدر: 2022 IEEE International Reliability Physics Symposium (IRPS)

الاتاحة: http://dx.doi.org/10.1109/irps48227.2022.9764482
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764482.pdf?arnumber=9764482

المؤلفون: Viey A. G., Vandendaele W., Jaud M. -A., Coignus J., Cluzel J., Krakovinsky A., Martin S., Biscarrat J., Gwoziecki R., Sousa V., Gaillard F., Modica R., Iucolano F., Meneghini M., Meneghesso G., Ghibaudo G.

المساهمون: Viey, A. G., Vandendaele, W., Jaud, M. -A., Coignus, J., Cluzel, J., Krakovinsky, A., Martin, S., Biscarrat, J., Gwoziecki, R., Sousa, V., Gaillard, F., Modica, R., Iucolano, F., Meneghini, M., Meneghesso, G., Ghibaudo, G.

مصطلحات موضوعية: BTI reliability, DC pBTI, GaN-on-Si E-mode MOSc-HEMT

Relation: info:eu-repo/semantics/altIdentifier/isbn/978-1-7281-6893-7; info:eu-repo/semantics/altIdentifier/wos/WOS:000672563100130; ispartofbook:IEEE International Reliability Physics Symposium Proceedings; 2021 IEEE International Reliability Physics Symposium, IRPS 2021; volume:2021-; firstpage:1; lastpage:8; numberofpages:8; serie:IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS; http://hdl.handle.net/11577/3390786; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85105586690

الاتاحة: http://hdl.handle.net/11577/3390786
https://doi.org/10.1109/IRPS46558.2021.9405221

المؤلفون: Boccarusso L., Mocerino D., Durante M., Iucolano F., Minutolo F. M. C., Langella A.

المساهمون: Boccarusso, L., Mocerino, D., Durante, M., Iucolano, F., Minutolo, F. M. C., Langella, A.

Relation: ispartofbook:ESAFORM 2021; 24th International Conference on Material Forming; https://hdl.handle.net/11588/939625; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85119328115

الاتاحة: https://hdl.handle.net/11588/939625
https://doi.org/10.25518/esaform21.4044