المؤلفون: Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 13, Pp 15-23 (2025)

مصطلحات موضوعية: Transition metal di-chalcogenide (TMDC), molybdenum di-sulfide (MoS₂), ultra-high vacuum (UHV) radio frequency (RF) magnetron sputtering, low-rate sputtering, grain size, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10758789/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/bc84f01173dc40d4a533ebbff5f2b6a7

المؤلفون: Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 15-21 (2023)

مصطلحات موضوعية: 2D-FETs, CMOS inverter, doping-free, WSe₂, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9963927/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/78132e64be9f473e9a8658ead202977e

المؤلفون: Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/dda183a6676b4b4b9870a3757832d4df

المؤلفون: Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1117-1124 (2021)

مصطلحات موضوعية: Tungsten disulfide (WS₂), pMISFET, ultra-high vacuum (UHV), radio-frequency (RF) magnetron sputtering, sulfur-vapor annealing (SVA), TiN top gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9525137/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/11cee9fddb4246718e11886e469a32ab

المؤلفون: Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kakushima Kuniyuki, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 2-6 (2019)

مصطلحات موضوعية: Transition metal di-chalcogenide, TMDC, molybdenum disulfide (MoS₂), UHV RF sputtering, H₂S annealing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8516288/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/8479b4f0da7940ff8104e132b5edfd81

المؤلفون: Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 1258-1263 (2019)

مصطلحات موضوعية: Transition metal dichalcogenide (TMDC), zirconium disulfide (ZrS₂), radio-frequency magnetron sputtering, sulfur vapor annealing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8848462/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/19a6e270e1e647a884d4be0a8c15582f

المؤلفون: Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1239-1245 (2018)

مصطلحات موضوعية: Vertically-stacked nanowire FETs, accumulation mode operation, self-heating-effect, source/drain recessed contact, p/n-stacked nanowire on bulk-FinFET, 3-dimensinal 6T-SRAM layout, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8540840/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/ce1ee70626f74aaeaca5484246517df9

المؤلفون: Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)

مصطلحات موضوعية: Transition metal di-chalcogenide, molybdenum disulfide, sputtering, large area integration, MISFET, top gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8543583/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/a83116f24e794cb490cc4ec8810be61b

المؤلفون: Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka

المصدر: Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)

مصطلحات موضوعية: Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2041-1723

URL الوصول: https://doaj.org/article/c3d93914213244d0bea559af94fe9baa

المؤلفون: Iriya Muneta, Shinobu Ohya, Hiroshi Terada, Masaaki Tanaka

المصدر: Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)

مصطلحات موضوعية: Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2041-1723

URL الوصول: https://doaj.org/article/54dd4e9df6254392800fb6276603c0d6

المؤلفون: Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kuniyuki Kakushima, Masaya Hamada, Satoshi Igarashi, Shinya Imai, 五十嵐 智, 今井 慎也, 宗田 伊理也, 濱田 昌也, 筒井 一生, 若林 整, 角嶋 邦之

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3902

المؤلفون: Hitoshi Wakabayashi, Iriya Muneta, Kentaro Matsuura, Kuniyuki Kakushima, Masaya Hamada, Takuya Hoshii, Tsutsui Kazuo, 宗田 伊理也, 星井 拓也, 松浦 賢太朗, 濱田 昌也, 筒井 一生, 若林 整, 角嶋 邦之

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3901

المؤلفون: Haruki Tanigawa, Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kentaro Matsuura, Kuniyuki Kakushima, Takuya Hoshii, 宗田 伊理也, 星井 拓也, 松浦 賢太朗, 筒井 一生, 若林 整, 角嶋 邦之, 谷川 晴紀

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3889

المؤلفون: Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kuniyuki Kakushima, Takanori Shirokura

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :2239

المؤلفون: Atsushi Hori, Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kuniyuki Kakushima, Tomohiko Yamagishi, 堀 敦, 宗田 伊理也, 山岸 朋彦, 筒井 一生, 若林 整, 角嶋 邦之

المصدر: JSAP Annual Meetings Extended Abstracts. 2019, :3104

المؤلفون: Atsushi Hori, Atsushi Ogura, Haruki Tanigawa, Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kuniyuki Kakushima, Masaya Hamada, Takamasa Kawanago, Takuro Sakamoto, Takuya Hamada, kentarou matsuura, 坂本 拓朗, 堀 敦, 宗田 伊理也, 小椋 厚志, 川那子 高暢, 松浦 賢太朗, 濱田 拓也, 濱田 昌也, 筒井 一生, 若林 整, 角嶋 邦之, 谷川 晴紀

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :2745

المؤلفون: Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kuniyuki Kakushima, Takanori Shirokura, 宗田 伊理也, 白倉 孝典, 筒井 一生, 若林 整, 角嶋 邦之

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :2152

المؤلفون: Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kazuya Hisatsune, Kuniyuki Kakushima, Takuya Hoshii, 久恒 和也, 宗田 伊理也, 星井 拓也, 筒井 一生, 若林 整, 角嶋 邦之

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :1871

المؤلفون: Haruki Tanigawa, Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kentaro Matsuura, Kuniyuki Kakushima, Masaya Hamada, Satoshi Igarashi, Takuro Sakamoto, 五十嵐 智, 坂本 拓朗, 宗田 伊理也, 松浦 賢太朗, 濱田 昌也, 筒井 一生, 若林 整, 角嶋 邦之, 谷川 晴紀

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3718

المؤلفون: Haruki Tanigawa, Hitoshi Wakabayashi, Iriya Muneta, Kazuo Tsutsui, Kentaro Matsuura, Kuniyuki Kakushima, Masaya Hamada, Takuro Sakamoto, Takuya Hoshii, 坂本 拓朗, 宗田 伊理也, 星井 拓也, 松浦 賢太朗, 濱田 昌也, 筒井 一生, 若林 整, 角嶋 邦之, 谷川 晴紀

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3719