المؤلفون: Yuanyuan Shi (563992), Benjamin Groven (3840679), Jill Serron (10528876), Xiangyu Wu (2128249), Ankit Nalin Mehta (3840685), Albert Minj (10884036), Stefanie Sergeant (3915995), Han Han (174736), Inge Asselberghs (1550581), Dennis Lin (2745829), Steven Brems (1435540), Cedric Huyghebaert (1435558), Pierre Morin (2404924), Iuliana Radu (3840676), Matty Caymax (1697005)

مصطلحات موضوعية: Biophysics, Medicine, Biotechnology, Environmental Sciences not elsewhere classified, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, Information Systems not elsewhere classified, transition metal dichalcogenides, Sapphire Template Screening, epitaxial seeding capability, sapphire surface anomalies, sapphire terrace width, extrinsic MoS 2 device performance, MoS 2, sapphire terraces, sapphire surface topography, epitaxial MoS 2 monolayer, MOCVD, field-effect transistor variability, Complementary scanning probe micros., MoS 2 regions, MX 2 monolayer, engineering Wafer-Scale Epitaxial T., Advanced High-Performance Nanoelect., MX 2 growth behavior

Relation: https://figshare.com/articles/journal_contribution/Engineering_Wafer-Scale_Epitaxial_Two-Dimensional_Materials_through_Sapphire_Template_Screening_for_Advanced_High-Performance_Nanoelectronics/14687268

الاتاحة: https://doi.org/10.1021/acsnano.0c07761.s001