-
1Academic Journal
المؤلفون: Salem, B., Olivares, J., Brault, J., Monat, Christelle, Gendry, Michel, Hollinger, Guy, Maaref, H., Guillot, G., Bremond, G.
المساهمون: Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM)
المصدر: ISSN: 0026-2692 ; Microelectronics Journal ; https://hal.science/hal-02165357 ; Microelectronics Journal, 2002, 33, pp.579 - 582.
مصطلحات موضوعية: Optical anisotropy, Photoluminescence, InP substrates, Quantum islands, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
-
2Conference
المؤلفون: Li, Qiang, Li, Ming, Tang, Chak Wah, Lau, Kei May
مصطلحات موضوعية: Gate-length, InAlAs/InGaAs, InP, InP substrates, Lattice-matched, Layered Structures, Maximum oscillation frequency, RF performance
Relation: http://repository.ust.hk/ir/Record/1783.1-33254; International Conference on Indium Phosphide and Related Materials, Berlin, Germany, 2011, article number 5978339; http://www.scopus.com/record/display.url?eid=2-s2.0-84863288445&origin=inward
-
3Conference
المؤلفون: Buckley, D. Noel, O'Dwyer, Colm, Lynch, Robert P., Newcomb, Simon B.
مصطلحات موضوعية: Porous InP layers, InP substrates, Aqueous KOH, Transmission electron microscopy (TEM), AFM measurement, Electrochemistry, Materials science
وصف الملف: application/pdf
Relation: 206th Meeting of the Electrochemical Society Conference, Honolulu, Hawaii, 3-8 Oct, 2004; Buckley, D. N., O’Dwyer, C., Lynch, R., Sutton, D., Newcomb, S. B. (2004) 'Formation of Nanoporous InP by Electrochemical Anodization', 206th Meeting of the Electrochemical Society: State -of-the-Art Program on Compound Semiconductors XLI. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. Pennington, NJ: The Electrochemical Society, 6, pp. 103-117.; 117; 1-56677-419-5; Proc. Electrochem. Soc.; 103; http://hdl.handle.net/10468/1011
الاتاحة: http://hdl.handle.net/10468/1011
-
4Academic Journal
المؤلفون: Poole, P.J., Lu, Z.G., Liu, J.R., Barrios, P., Jiao, Z.J., Poitras, D., Springthorpe, A.J., Pakulski, G., Goodchild, D., Rioux, B.
مصطلحات موضوعية: Cavity length, Continuous-wave operations, Gain medium, InAs/InP, Injection currents, InP substrates, Narrow-line width, Optical linewidth, Output power, Photoluminescence peak, Relative intensity noise, Ridge waveguide lasers, Side mode suppression ratios, Single mode, Wavelength ranges, Chemical beam epitaxy, Distributed feedback lasers, Indium phosphide, Ridge waveguides, Semiconductor junctions, Semiconductor quantum dots
وصف الملف: text
Relation: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, 22 May 2011 through 26 May 2011, Berlin, ISBN: 9781457717536, Publication date: 2011
-
5Conference
المؤلفون: Shahid, Naeem, Li, Mingyu, Naureen, Shagufta, Swillo, Marcin, Anand, S
المصدر: European Conference on Lasers and Electro-Optics (CLEO/Europe) 2011
مصطلحات موضوعية: Keywords: Dispersive properties, Filtering applications, InP substrates, InP-based materials, Mode coupling, Optical characteristics, Optoelectronic components, Photonic crystal waveguide, Practical importance, Wave-guiding, Wavelength selection, Dielectric wavegui
جغرافية الموضوع: Munich Germany
Relation: European Conference on Lasers and Electro-Optics (CLEO/Europe 2011); http://hdl.handle.net/1885/65905; https://openresearch-repository.anu.edu.au/bitstream/1885/65905/5/engineering_mode-gaps_pdf.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/65905/7/01_Shahid_Engineering_mode-gaps_in_2011.pdf.jpg
-
6Conference
المؤلفون: Feiste, U., Kaiser, R., Mekonnen, G.G., Schramm, C., Trommer, D., Unterborsch, G.
مصطلحات موضوعية: electron device noise, iii-v semiconductors, indium compounds, integrated optoelectronics, junction gate field effect transistors, optical communication equipment, photodiodes, receivers, semiconductor device models, semiconductors, bias dependence, rf characterization, optical receivers, signal measurement, noise measurement, noise characterization, monolithically integrated receiver, optoelectronic integrated circuit, oeic, optical waveguide, gain-bandwidth product, bias operation, receiver input noise, jfet channel noise, equivalent circuit model, optical sensitivity, bit rate, 576 mbit/s, InP substrates
Time: 621
Relation: International Conference Indium Phosphide and Related Materials 1991; Third International Conference Indium Phosphide and Related Materials; https://publica.fraunhofer.de/handle/publica/319346
-
7Conference
المؤلفون: Möhrle, M., Grützmacher, D., Rosenzweig, M., Düser, H.
مصطلحات موضوعية: gallium arsenide, gallium compounds, iii-v semiconductors, indium compounds, semiconductor junction lasers, laser properties, ridge-waveguide lasers, separate-confinement-multi-quantum-well-structures, threshold current densities, characteristic temperature, laser structures, 1.35 micron, 60 k, InP substrates, InGaAs-InGaAsp-InP structures
Time: 621
Relation: International Conference Indium Phosphide and Related Materials 1991; Third International Conference Indium Phosphide and Related Materials; https://publica.fraunhofer.de/handle/publica/319350
-
8
المؤلفون: R. L. Williams, C.E. Norman, V.K. Guptal, G. C. Aers, M. Dion, Z. R. Wasilewski
المصدر: Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
مصطلحات موضوعية: III-V semiconductors, InGaAs-InAlAs single quantum wells, Fabrication, Optical fiber, Materials science, Band gap, InGaAs-InAlAs, chemistry.chemical_element, molecular beam epitaxial growth, semiconductor lasers, MBE growth, optical transmitters, law.invention, Semiconductor laser theory, Gallium arsenide, optical fibre communication, InGaAs/InAlAs QWs, chemistry.chemical_compound, selective area bandgap control, law, optoelectronic device applications, Quantum well, business.industry, patterned InP substrates, gallium arsenide, laser transitions, semiconductor growth, indium compounds, optical fibre communication systems, Wavelength, 1.3 mum, chemistry, quantum well lasers, Optoelectronics, long wavelength integrated optoelectronic devices, business, 1.55 mum, indium migration, Indium
-
9
المؤلفون: G. Hollinger, Hassen Maaref, Julien Brault, J. Olivares, Gérard Guillot, Georges Bremond, Michel Gendry, Bassem Salem, Christelle Monat
المساهمون: Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'électronique, optoélectronique et microsystèmes (LEOM), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), Gendry, Michel
المصدر: Microelectronics Journal
Microelectronics Journal, Elsevier, 2002, 33, pp.579-582مصطلحات موضوعية: 010302 applied physics, Photoluminescence, Materials science, Condensed matter physics, Linear polarization, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, General Engineering, 02 engineering and technology, Quantum islands, 021001 nanoscience & nanotechnology, Polarization (waves), 01 natural sciences, InP substrates, Optical anisotropy, Quantum dot, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Luminescence, Quantum, Vicinal, Molecular beam epitaxy
وصف الملف: application/pdf
-
10Academic Journal
المؤلفون: Hase, A., Chew-Walter, A., Kuenzel, H.
مصطلحات موضوعية: aluminium compounds, band structure, gallium arsenide, iii-v semiconductors, indium compounds, photoluminescence, semiconductor epitaxial layers, semiconductor quantum wells, stoichiometry, barrier composition dependence, emission properties, quantum wells, molecular beam epitaxy, InP substrates, band gap, quantum well emission energies, well width dependence, barrier height, optical quality, interface roughness, heterointerfaces, 500 c, 10 k, 797 nm, (AlGa)0.48In0.52As-Ga0.47In0.53As, InP
Time: 621, 548
Relation: Journal of Crystal Growth; https://publica.fraunhofer.de/handle/publica/191739
-
11Academic Journal
المؤلفون: D. I. Lubyshev, K. Teker, O. Malis, Y. Wu, J. M. Fastenau, X. -m. Fang, C. Doss, A. B. Cornfeld, W. K. Liu
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: InP-HBT, MBE, 150 mm InP substrates, InP/GaAsSb HBT, MHBT
وصف الملف: application/pdf
Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.658.478; http://gaas.org/Digests/2003/2003PDF/3-3.pdf
-
12Academic Journal
المؤلفون: J. M. Fastenau, W. K. Liu, D. Lubyshev, X. -m. Fang, Y. Wu, C. Doss
المساهمون: The Pennsylvania State University CiteSeerX Archives
مصطلحات موضوعية: InP Substrates, MBE, Surface Morphology, Interfacial Contamination
وصف الملف: application/pdf
Relation: http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.482.6737; http://www.gaas.org/Digests/2005/2005papers/4.5.pdf
-
13Academic Journal
المؤلفون: Lei, Wen
المصدر: Journal of Nanoparticle Research
مصطلحات موضوعية: Keywords: Band gaps, Bowing effect, Candidate materials, Critical thickness, Deposition thickness, Growth, InAs quantum dots, InAsSb/InP, InP, InP substrates, Midinfrared lasers, Narrow size distributions, Photoluminescence measurements, Quantum dashes, Self-assemb Growth, Nanostructures, Optical property
Relation: http://hdl.handle.net/1885/62105; https://openresearch-repository.anu.edu.au/bitstream/1885/62105/5/Lei_2010_fabrication_and_optical_properties.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/62105/7/01_Lei_Fabrication_and_optical_2011.pdf.jpg
الاتاحة: http://hdl.handle.net/1885/62105
https://doi.org/10.1007/s11051-010-9918-1
https://openresearch-repository.anu.edu.au/bitstream/1885/62105/5/Lei_2010_fabrication_and_optical_properties.pdf.jpg
https://openresearch-repository.anu.edu.au/bitstream/1885/62105/7/01_Lei_Fabrication_and_optical_2011.pdf.jpg -
14Academic Journal
المؤلفون: Paiman, Suriati, Gao, Qiang, Jagadish, Chennupati, Pemasiri, Kuranananda, Montazeri, Mohammad, Jackson, Howard E, Smith, Leigh M, Yarrison-Rice, Jan M, Zhang, Xin, Zou, Jin, Tan, Hark Hoe
المصدر: Nanotechnology
مصطلحات موضوعية: Keywords: Catalyst particle size, Chemical vapour deposition, Colloidal gold particles, InP, InP substrates, Photoluminescence measurements, Recombination lifetime, Structural and optical properties, Time-resolved photoluminescence, V/III ratio, Wurtzite
Relation: http://hdl.handle.net/1885/59812; https://openresearch-repository.anu.edu.au/bitstream/1885/59812/5/Effect_of_VIII_ratio.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/59812/7/01_Paiman_The_effect_of_V/III_ratio_and_2009.pdf.jpg
-
15Academic Journal
المؤلفون: Caroff, Philippe, Bertru, N, Lu, W, Elias, G, Dehaese, O, Letoublon, A, Le Corre, A
المصدر: Journal of Crystal Growth
مصطلحات موضوعية: Keywords: A1. Reflection high-energy electron diffraction, A3. Molecular beam epitaxy, A3. Quantum dots, Capping layers, Critical thickness, Double-cap procedures, InAs, InAs quantum dots, Inp, InP substrates, Mass transports, Substrate temperatures, Crystal growth A1. Reflection high-energy electron diffraction
Relation: http://hdl.handle.net/1885/79888; https://openresearch-repository.anu.edu.au/bitstream/1885/79888/5/Caroff_Critical_thickness_for_InAs_quantum_dot_formation.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/79888/7/01_Caroff_Critical_thickness_for_InAs_2009.pdf.jpg
الاتاحة: http://hdl.handle.net/1885/79888
https://doi.org/10.1016/j.jcrysgro.2009.02.048
https://openresearch-repository.anu.edu.au/bitstream/1885/79888/5/Caroff_Critical_thickness_for_InAs_quantum_dot_formation.pdf.jpg
https://openresearch-repository.anu.edu.au/bitstream/1885/79888/7/01_Caroff_Critical_thickness_for_InAs_2009.pdf.jpg -
16Academic Journal
المؤلفون: Roehle, H., Schroeter-Janssen, H., Harde, P., Franke, D.
مصطلحات موضوعية: doping profiles, iii-v semiconductors, indium compounds, interstitials, iron, secondary ion mass spectra, semiconductor epitaxial layers, semiconductor growth, vapour phase epitaxial growth, fe doping profiles, movpe, sims, InP substrates, dopant diffusion, substrate preparation, deionized water rinsing, etching, semiconductor, inp
Time: 621
Relation: Workshop on Organometallic Vapor Phase Epitaxy 1995; Journal of Electronic Materials; https://publica.fraunhofer.de/handle/publica/187472
-
17Report
المؤلفون: Fonstad, Clifton J., Jr., Braun, Eric K., Shenoy, Krishna V., Mikkelson, J. M., Aggarwal, Rajni J., Ahadian, Joseph F., Petrich, Gale S., Kolodziejski, Leslie A., Grot, A. C., Psaltis, Demetri, Royter, Yakov, Wang, Hao, Martin, Paul S., Haus, Hermann A., Chen, Jerry C., Pan, Janet L., Peng, Lung-Han, Iisuka, Norio, Smet, Jurgen H., Hu, Qing, Prasad, Sheila, Hoshino, Isako
مصطلحات موضوعية: Heterostructures for High-Performance Devices, High-Temperature Stability of GaAs Integrated Circuits, High Peak-to-Valley Current Ratio Resonant-Tunneling Diodes on GaAs Substrates, Monolithic Integration of Resonant-Tunneling Diodes on GaAs Integrated Circuits, Phosphide-Based Optical Emitters for Monolithic Integration with GaAs MESFETS, Monolithic Integration of LEDs and VLSI GaAs MESFET Circuits, Development of an Epi-on-Electronics OEIC Technology, Integrated Optics Circuits Based on Commercial GaAs Integrated Circuits, Growth of Distributed Bragg Reflector at Reduced Temperature, Growth of Multiple Quantum Well Heterostructures at Reduced Temperature, Reactive Ion Etching of InGaAIAs Heterostructures, Reactive Ion Etching of InGaAsP Heterostructures, Tunable Semiconductor Lasers, Application of the Spectral Index Method to Laser Diode Design, Normal Incidence Quantum Well Infrared Photodetector, Fourteen-Band k * p Analysis of Intersubband Transitions in Conduction Band Quantum Wells, Intersubband Transitions in Ultra-Narrow Quantum Wells, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [001] InP Substrates, In-plane Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, Tilted Field Magneto-Tunneling Spectroscopy in Double InGaAs/InAIAs Quantum Well Structures on [111]B InP Substrates, High-Frequency/High-Speed Characterization of Optoelectronic Devices, High-Frequency/High-Speed Characterization of Integrated Circuits, In-Situ Supersonic Beam Etching of III-V Heterostructures
وصف الملف: application/pdf
Relation: Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1994; Solid State Physics, Electronics and Optics; Materials and Fabrication; Heterostructures for High-Performance Devices; Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 137; RLE_PR_137_01_01s_01; http://hdl.handle.net/1721.1/57295
الاتاحة: http://hdl.handle.net/1721.1/57295
-
18
المؤلفون: H. Roehle, D. Franke, H. Schroeter-Janssen, P. Harde
المساهمون: Publica
مصطلحات موضوعية: movpe, sims, iii-v semiconductors, Diffusion, Inorganic chemistry, Analytical chemistry, Substrate (electronics), Epitaxy, iron, Etching (microfabrication), secondary ion mass spectra, Materials Chemistry, deionized water rinsing, etching, fe doping profiles, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, Group 2 organometallic chemistry, vapour phase epitaxial growth, Dopant, Chemistry, doping profiles, Doping, inp, semiconductor epitaxial layers, semiconductor, Condensed Matter Physics, substrate preparation, Electronic, Optical and Magnetic Materials, semiconductor growth, indium compounds, InP substrates, dopant diffusion, interstitials
-
19Academic Journal
المؤلفون: Schramm, C., Bach, H.G., Kunzel, H., Praseuth, J.P.
مصطلحات موضوعية: aluminium compounds, deep level transient spectroscopy, deep levels, gallium arsenide, iii-v semiconductors, indium compounds, luminescence of inorganic solids, photoluminescence, schottky effect, semiconductor epitaxial layers, semiconductor-metal boundaries, silicon, spectral line breadth, surface treatment, x-ray diffraction examination of materials, MBE semiconductor, barrier height, leakage current density, Ga content dependence, schottky contacts, stability, alloy broadened trap responses, numerical spectrum analysis, filling pulse width, deep level concentration, crystalline quality, narrow x-ray diffraction peaks, photoluminescence linewidths, InP substrates
Time: 621, 541
Relation: Journal of the Electrochemical Society; https://publica.fraunhofer.de/handle/publica/180757
-
20
المؤلفون: H. Künzel, H. G. Bach, J. P. Praseuth, C. Schramm
المساهمون: Publica
مصطلحات موضوعية: iii-v semiconductors, Stereochemistry, schottky effect, photoluminescence linewidths, deep level transient spectroscopy, Analytical chemistry, Crystal structure, Epitaxy, numerical spectrum analysis, barrier height, deep level concentration, Ga content dependence, Materials Chemistry, Electrochemistry, deep levels, x-ray diffraction examination of materials, narrow x-ray diffraction peaks, filling pulse width, Renewable Energy, Sustainability and the Environment, Chemistry, alloy broadened trap responses, semiconductor-metal boundaries, Schottky diode, silicon, aluminium compounds, semiconductor epitaxial layers, surface treatment, stability, crystalline quality, Condensed Matter Physics, leakage current density, gallium arsenide, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, indium compounds, luminescence of inorganic solids, InP substrates, X-ray crystallography, photoluminescence, spectral line breadth, MBE semiconductor, Molecular beam epitaxy, schottky contacts
