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المؤلفون: R. L. Williams, C.E. Norman, V.K. Guptal, G. C. Aers, M. Dion, Z. R. Wasilewski
المصدر: Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
مصطلحات موضوعية: III-V semiconductors, InGaAs-InAlAs single quantum wells, Fabrication, Optical fiber, Materials science, Band gap, InGaAs-InAlAs, chemistry.chemical_element, molecular beam epitaxial growth, semiconductor lasers, MBE growth, optical transmitters, law.invention, Semiconductor laser theory, Gallium arsenide, optical fibre communication, InGaAs/InAlAs QWs, chemistry.chemical_compound, selective area bandgap control, law, optoelectronic device applications, Quantum well, business.industry, patterned InP substrates, gallium arsenide, laser transitions, semiconductor growth, indium compounds, optical fibre communication systems, Wavelength, 1.3 mum, chemistry, quantum well lasers, Optoelectronics, long wavelength integrated optoelectronic devices, business, 1.55 mum, indium migration, Indium
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2Academic Journal
المؤلفون: Guptal, V. K., Williams, R. L., Wasilewski, Z. R., Dion, M., Aers, G. C., Norman, C. E.
مصطلحات موضوعية: 1.3 mum, 1.55 mum, gallium arsenide, III-V semiconductors, indium compounds, indium migration, InGaAs/InAlAs QWs, InGaAs-InAlAs, InGaAs-InAlAs single quantum wells, laser transitions, long wavelength integrated optoelectronic devices, MBE growth, molecular beam epitaxial growth, optical fibre communication, optical fibre communication systems, optical transmitters, optoelectronic device applications, patterned InP substrates, quantum well lasers, selective area bandgap control, semiconductor growth, semiconductor lasers
وصف الملف: text