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1Academic Journal
المؤلفون: Yu-Chung Lin, Ikai Lo, Cheng-Da Tsai, Ying-Chieh Wang, Hui-Chun Huang, Chu-An Li, Mitch M. C. Chou, Ting-Chang Chang
المصدر: Nanomaterials; Volume 13; Issue 13; Pages: 1922
مصطلحات موضوعية: full-color GaN micro-LEDs, In x Ga 1-x N-based quantum wells (QW), plasma-assisted molecular beam epitaxy (PAMBE)
وصف الملف: application/pdf
Relation: Nanoelectronics, Nanosensors and Devices; https://dx.doi.org/10.3390/nano13131922
الاتاحة: https://doi.org/10.3390/nano13131922
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2Academic JournalSystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
المؤلفون: Badreddine, Smiri, Joshya, R.S., Ilkay, Demir, Faouzi, Saidi, Ismail, Altuntas, Lagarde, Delphine, Rober, Cedric, Xavier, Marie, Hassen, Maaref
المساهمون: Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Université de Monastir - University of Monastir (UM), Cumhuriyet University Sivas, Turkey
المصدر: ISSN: 0030-3992 ; Optics and Laser Technology ; https://hal.science/hal-03878260 ; Optics and Laser Technology, 2022, 148, pp.107714. ⟨10.1016/j.optlastec.2021.107714⟩.
مصطلحات موضوعية: S-shaped, FKOs, LSE, Localized state, SWIR detector, TEMPERATURE-DEPENDENCE, PHOTOREFLECTANCE, PHOTOLUMINESCENCE, RECOMBINATION, LUMINESCENCE, EXCITONS, MODEL, High-xIn(x)Ga(1-x)As, Dislocation density, [PHYS]Physics [physics]
Relation: hal-03878260; https://hal.science/hal-03878260; https://hal.science/hal-03878260/document; https://hal.science/hal-03878260/file/S0030399221008021.pdf; PII: S0030-3992(21)00802-1
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3Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
المؤلفون: Smiri Badreddine, R.S. Joshya, Demir Ilkay, Saidi Faouzi, Altuntas Ismail, Delphine Lagarde, Cedric Rober, Marie Xavier, Maaref Hassen
المساهمون: Eğitim Bilimleri Enstitüsü, Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Fédération de recherche « Matière et interactions » (FeRMI), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Université de Monastir - University of Monastir (UM), Cumhuriyet University [Sivas, Turkey]
المصدر: Optics and Laser Technology
Optics and Laser Technology, 2022, 148, pp.107714. ⟨10.1016/j.optlastec.2021.107714⟩مصطلحات موضوعية: FKOs, [PHYS]Physics [physics], High-xIn(x)Ga(1-x)As, PHOTOREFLECTANCE, EXCITONS, RECOMBINATION, S-shaped, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, SWIR detector, MODEL, LSE, TEMPERATURE-DEPENDENCE, LUMINESCENCE, Dislocation density, PHOTOLUMINESCENCE, Electrical and Electronic Engineering, Localized state
وصف الملف: application/pdf
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4Academic Journal
المؤلفون: A. A. Gorskiy, А. А. Горский
المصدر: Fine Chemical Technologies; Vol 9, No 4 (2014); 70-72 ; Тонкие химические технологии; Vol 9, No 4 (2014); 70-72 ; 2686-7575 ; 2410-6593
مصطلحات موضوعية: 3D модель, In x Ga 1-x As, газовый смеситель, резкие гетеро-переходы, моделирование
وصف الملف: application/pdf
Relation: https://www.finechem-mirea.ru/jour/article/view/455/501; Rogalski A. Quantum well photoconductors in infrared detector technology // Appl. Phys. R. 2003. V. 93. P. 4355-4391.; Zhao J.H, Tang X.H, Mei T., Zhang B.L., Huang G.Sh. MOCVD growth of InGaAsP/InGaAs multi-step-quantum well structure for QWIP application by using TBA and TBP in N2 ambient // J. Crystal Growth. 2004. V. 268. P. 432-436.; Nguyen L.D., Brown A.S. [et al.]. 50-nm Self-Aligned-Gate Pseudomorphic AlInAs/GaInAs high electron mobility transistors // IEEE Trans. on Electron Devices. 2007. V. 39. № 9. P. 2007-2013.; Diez E., Chen Y.P., Cervero J. M. Two-dimensional electon gas in InGaAs/InAlAs quantum wells // Appl. Phys. Lett. 2006. V. 88. P. 052107-1-052107-3; Белявский В.И. Физические основы полупроводниковой нанотехнологии // Соросовский образовательный журнал. 1998. № 10. С. 92-98; Официальная страница программного продукта http://www.comsol.com/ (04.04.2014); Зенкевич О. Метод конечных элементов в технике. М.: Мир, 1975. 310 c.; Neufeld P.D., Janzen A.R., Aziz R.A. Empirical equations to calculate 16 of the transport collision integrals (l; s) for the Lenndard-Jones (12-6) potential // J. Chem. Physics. 1972. V. 57. P. 1100-1102.; Lennard-Jones J.E. On the determination of molecular fields // Proc. Roy. Soc. 1924. V. A106. P. 463-477. Rogalski A. Quantum well photoconductors in infrared detector technology // Appl. Phys. R. 2003. V. 93. P. 4355-4391.; Lennard-Jones J.E. On the determination of molecular fields // Proc. Roy. Soc. 1924. V. A106. P. 463-477.; https://www.finechem-mirea.ru/jour/article/view/455
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5Academic Journal
المؤلفون: A. A. Gorskiy, L. B. Berliner, E. V. Titova
المصدر: Тонкие химические технологии, Vol 8, Iss 4, Pp 85-91 (2013)
مصطلحات موضوعية: rotating substrate keeper, horizontal reactor, mocvd, movpe, 3d model, numerical studying, in x ga 1-x as/inp, nanolayers, Chemistry, QD1-999
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6
المؤلفون: Rachid Driad, Martin Walther, Susanne Kopta, Oliver John, Klaus Köhler, Norman Marenco, Oliver Ambacher, Martin Rutters, Bjorn Albrecht, Michael Kunzer
المساهمون: Publica
المصدر: IEEE Journal of Selected Topics in Quantum Electronics. 20:166-172
مصطلحات موضوعية: Photocurrent, Materials science, business.industry, Photodetector, p-i-n diodes, semiconductor epitaxial layers, Specific detectivity, Atomic and Molecular Physics, and Optics, Photodiode, law.invention, Aluminium gallium nitride (Al(x)Ga(1-x)N), Responsivity, law, Rise time, Ultraviolet light, Optoelectronics, Electrical and Electronic Engineering, business, ultraviolet (UV) photodetectors, Dark current
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7
المؤلفون: Yasemin Şafak, Habibe Uslu, Ekmel Ozbay, Engin Arslan, İlke Taşçıoğlu
المساهمون: Özbay, Ekmel
المصدر: Microelectronic Engineering
مصطلحات موضوعية: Loss tangent, Permittivity, Electric modulus, Materials science, Passivation, Electric properties, Function of frequency, Gallium, Astrophysics::Cosmology and Extragalactic Astrophysics, Dielectric, Interface states density, Interfacial polarization, Dielectric losses, AC electrical conductivity, chemistry.chemical_compound, Electrical resistivity and conductivity, (Ni/Au)/Al xGa 1-xN/AlN/GaN, Heterostructures, Electrical and Electronic Engineering, Condensed matter physics, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Experimental values, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Conductance-voltage measurements, Solid state physics, Silicon nitride, chemistry, Capacitance voltage, Imaginary parts, Temperature dependence, (Ni/Au)/Al(x)Ga(1-x)n/AlN/GaN heterostructures, Dielectric properties, Heterojunctions, Density of states, Dissipation factor, Dielectric loss, Low frequency
وصف الملف: application/pdf
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8Academic Journal
المؤلفون: Park, Mi Sun, Sung, Shi-Joon, Kim, Dae-Hwan
مصطلحات موضوعية: Culn(x)Ga(1-x)Se(2), Selenization, Solar Cell, Thin Film, Electronic Material, BILAYER PRECURSOR FILM, IN-GA PRECURSORS, REACTION-KINETICS, CUINSE2, CU(IN,GA)SE-2, CUGASE2, ROUTE
Relation: http://hdl.handle.net/20.500.11750/2924; 2-s2.0-84920735647; Journal of Nanoscience and Nanotechnology, v.15, no.3, pp.2490 - 2494
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9
المؤلفون: Kinoshita, Kyoichi, Ogata, Yasuyuki, Koshikawa, Naokiyo, Adachi, Satoshi, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Sugiki, Yoshihiro, Maekawa, Toru, Yoda, Shinichi
المصدر: 宇宙開発事業団技術報告: 化合物半導体研究アニュアルレポート2002:混晶半導体(InGaAs)の結晶育成に及ぼす微小重力の効果に関する研究.均一組成結晶の育成 = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2002): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals. :19-26
مصطلحات موضوعية: 結晶成長, 凍結, TLZ法, 温度勾配, crystal growth, In(x)Ga(1-x)As, 過冷却, supercooling, freezing, melt, temperature gradient, メルト, TLZ method, 対流, convection
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10
المؤلفون: Islam, M. R., Verma, P., Suzuki, Masaru, Yamada, Masayoshi, Tatsumi, Masami, Hanaue, Yasuhiro, Kinoshita, Kyoichi
المصدر: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals. :73-79
مصطلحات موضوعية: crystal lattice, In(x)Ga(1-x)As, 結晶配向, モノクロメータ, compositional homogeneity, monochromator, 組成均一性, crystal orientation, マッピング, 結晶格子, 多結晶, 化学組成, chemical composition, photoluminescence, mapping, polycrystal, フォトルミネッセンス
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11
المؤلفون: Islam, M. R., Verma, P., Yamada, Masayoshi, Kodama, Shigeo, Hanaue, Yasuhiro, Kinoshita, Kyoichi
المصدر: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals. :61-71
مصطلحات موضوعية: Raman scattering, Raman散乱, multicomponent zone melting, 結晶成長, polycrystallization, crystal growth, 残余歪み, In(x)Ga(1-x)As, residual strain, photoluminescence, 多結晶化, フォトルミネッセンス, 多成分ゾーンメルティング
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12
المؤلفون: Nakamura, Hirohiko, Kato, Hirokazu, Kinoshita, Kyoichi, Yoda, Shinichi
المصدر: NASDA Technical Memorandum. :15-28
مصطلحات موضوعية: 微小重力, 一様結晶, In(x)Ga(1-x)As, qualitative examination, CGPM法, 熱力学, quantitative estimation, 定量的推定, 定性的検証, mixed crystal, microgravity, CGPM method, 濃度勾配部分溶融法, multi component zone melting method, 固液反応, thermodynamics, concentration gradient partial melting method, solid liquid reaction, homogeneous crystal, 混合結晶, In(x)Ga(1 minus x)As, 多成分ゾーン溶融法
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13
المؤلفون: Natl. Space Development Agency of Japan
المصدر: NASDA Technical Memorandum. :1-86
مصطلحات موضوعية: InAs GaAs, In(x)Ga(1-x)As, 国際宇宙ステーション, バイナリ半導体, mixed crystal, International Space Station, multi component zone melting method, solid liquid reaction, partial melting method, Space Shuttle, 多成分ゾーン溶融法, In(0.3)Ga(0.7)As, InAs-GaAs, 微小重力, graded solute concentration method, gジッタ, スペースシャトル, microgravity, 濃度勾配部分溶融法, 固液反応, 部分溶融法, concentration gradient partial melting method, グレーデッド溶質濃縮法, 単結晶, 混合結晶, In(x)Ga(1 minus x)As, single crystal, binary semiconductor, g jitter
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14
المصدر: NASDA Technical Memorandum. :77-81
مصطلحات موضوعية: 光電素子, Raman scattering, 非破壊法, 成長過程, In(x)Ga(1-x)As, 可変格子適合, tunable lattice matching, substrate, 出発材料, 基板結晶, 多結晶, polycrystal, growth process, 基板, nondestructive method, spatial homogeneity, optoelectronic device, 微小重力, エピタキシャル成長層, substrate crystal, ラマン散乱, compositional fraction, 塊状結晶, 成分比, microgravity, epilayer, 空間的一様性, bulk crystal, starting material, In(x)Ga(1 minus x)As
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15
المؤلفون: Maekawa, Toru, Hiraoka, Yoshiaki, Matsumoto, Satoshi
المصدر: 宇宙開発事業団技術報告 = NASDA Technical Memorandum. :19-26
مصطلحات موضوعية: 結晶成長, concentration gradient, 温度勾配, crystal growth, In(x)Ga(1-x)As, semiconductor crystal, residual gravity, 成長方向, growth direction, 冷却速度, temperature gradient, 組成的過冷却, 濃度勾配, growth rate, 残留重力, cooling rate, 半導体結晶, constitutional supercooling, 成長速度
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16
المؤلفون: Kemerink, Martijn, Koenraad, PM, Wolter, JH, Christianen, PCM, Geim, AK, Parlangeli, A, Maan, JC, Henini, M
المصدر: Superlattices and Microstructures. 21(2):217-222
مصطلحات موضوعية: bandstructure, GaAs/A1(x)Ga(1-x)As, double quantum well
وصف الملف: print
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17Academic Journal
المؤلفون: Albrecht, B., Kopta, S., John, O., Rütters, Martin, Kunzer, M., Driad, R., Marenco, N., Köhler, K., Walther, M., Ambacher, O.
مصطلحات موضوعية: Aluminium gallium nitride (Al(x)Ga(1-x)N), p-i-n diodes, semiconductor epitaxial layers, ultraviolet (UV) photodetectors
Time: 621, 620, 537, 660, 671
Relation: IEEE Journal of Selected Topics in Quantum Electronics; https://publica.fraunhofer.de/handle/publica/237182
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18Academic Journal
المؤلفون: Manz, Christian, Kunzer, Michael, Obloh, H., Ramakrishnan, A., Kaufmann, U.
مصطلحات موضوعية: In(x)Ga(1-x)N/GaN band offset, In(x)Ga(1-X)N, yellow-red-emission, gelb-rote Emission
Time: 621, 667
Relation: Applied Physics Letters; https://publica.fraunhofer.de/handle/publica/194401
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19
المؤلفون: Manz, C., Kunzer, M., Obloh, H., Ramakrishnan, A., Kaufmann, U.
المساهمون: Publica
مصطلحات موضوعية: In(x)Ga(1-x)N/GaN band offset, yellow-red-emission, gelb-rote Emission, In(x)Ga(1-X)N
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20
المصدر: 宇宙開発事業団技術報告 = NASDA Technical Memorandum.
مصطلحات موضوعية: concentration, model, 結晶成長, TLZ法, 温度勾配, crystal growth, In(x)Ga(1-x)As, 過冷却, supercooling, temperature gradient, translational motion, TLZ method, 並進運動, モデル, 濃度