المؤلفون: Wang H., Gopal P., Picozzi S., Curtarolo S., Buongiorno Nardelli M., Slawinska J.

المساهمون: Wang, H, Gopal, P, Picozzi, S, Curtarolo, S, Buongiorno Nardelli, M, Slawinska, J

مصطلحات موضوعية: Crystal symmetry, Degrees of freedom (mechanics), Density functional theory, Electric field, Ferroelectric material, Ferroelectricity, Germanium compound, Hole concentration, IV-VI semiconductor, Narrow band gap semiconductor, Semiconductor doping, Tellurium compound, Texture, Tin compounds

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000510938600001; volume:6; issue:1; journal:NPJ COMPUTATIONAL MATERIALS; https://hdl.handle.net/10281/521343

الاتاحة: https://hdl.handle.net/10281/521343
https://doi.org/10.1038/s41524-020-0274-0

المؤلفون: Wenjie Xie, Duncan P. Fagg, Narendar Nasani, Gabriel Constantinescu, Shahed Rasekh, Anke Weidenkaff, Andrei V. Kovalevsky, D. Pukazhselvan

المساهمون: Publica

المصدر: Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

مصطلحات موضوعية: Materials science, cobalt compounds, chemistry.chemical_element, hole mobility, thermal transport properties, Calcium, thermoelectric performance, thermoelectricity, thermoelectric application, dimensionless figure of merit, gadolinium compound, Thermal conductivity, bismuth compounds, Seebeck coefficient, Thermoelectric effect, IV-VI semiconductor, Figure of merit, thermal conductivity, Physical and Theoretical Chemistry, Thermoelectrics, calcium, calcium compounds, electrical conductivity, Condensed matter physics, Substitution (logic), low thermal conductivity, Thermoelectric materials, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, General Energy, electrical performance, chemistry, Haldane gap, thermo-electric materials, barium compounds, carrier concentration, hall mobility

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::793c868500ca7302205a6724e74f4759
https://doi.org/10.1021/acs.jpcc.0c03149

المؤلفون: Akihiro Ishida, Hiroki Akigawa, Seisuke Nakashima, Shintaro Hashiguchi, Shota Inaba, 中嶋 聖介, 橋口 慎太郎, 石田 明広, 秋川 弘樹, 稲葉 翔大

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :1299

المؤلفون: Akihiro Ishida, Seisuke Nakashima, Shota Inaba, Toshiki Yamagishi, 中嶋 聖介, 山岸 寿来, 石田 明広, 稲葉 翔太

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :1300

المؤلفون: Parashchuk, T., Zagorodnyuk, A., Nykyruy, L., Volochanska, B., Mazur, Т.

المصدر: Journal of Vasyl Stefanyk Precarpathian National University; Vol. 3 No. 1 (2016); 15-22 ; Журнал Прикарпатського національного університету імені Василя Стефаника; Том 3 № 1 (2016); 15-22 ; 2413-2349 ; 2311-0155

مصطلحات موضوعية: DFT, cluster models, quantum-chemical calculations, thermodynamic properties, IV-VI semiconductor materials, Lead Sulfide, теорія функціоналу густини, кластерні моделі, квантово-хімічні розрахунки, термодинамічні параметри, напівпровідники IV-VI, сульфід свинцю

وصف الملف: application/pdf

Relation: https://journals.pnu.edu.ua/index.php/jpnu/article/view/2664/3087; https://journals.pnu.edu.ua/index.php/jpnu/article/view/2664

الاتاحة: https://journals.pnu.edu.ua/index.php/jpnu/article/view/2664
https://doi.org/10.15330/jpnu.3.1.15-22

المؤلفون: Volochanska, B. P.

المصدر: Physics and Chemistry of Solid State; Vol. 16 No. 4 (2015); 649-653 ; Фізика і хімія твердого тіла; Том 16 № 4 (2015); 649-653 ; 2309-8589 ; 1729-4428

مصطلحات موضوعية: DFT, cluster models, quantum chemical calculations, thermodynamic properties, IV-VI semiconductor materials, lead sulfide, квантово-хімічні розрахунки, термодинамічні властивості, напівпровідникові IV-VI матеріали`, сульфід свинцю

وصف الملف: application/pdf

Relation: https://journals.pnu.edu.ua/index.php/pcss/article/view/1610/2053; https://journals.pnu.edu.ua/index.php/pcss/article/view/1610

الاتاحة: https://journals.pnu.edu.ua/index.php/pcss/article/view/1610
https://doi.org/10.15330/pcss.16.4.649-653

المؤلفون: Akihiro Ishida, Hiroki Akikawa, Seisuke Nakashima, Shintaro Hashiguchi, Toshiki Yamagishi, Yui Aofuji, 中嶋 聖介, 山岸 寿来, 橋口 慎太郎, 石田 明広, 秋川 弘樹, 青藤 唯

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :980

المؤلفون: Akihiro Ishida, Seisuke Nakashima, Shoji Watanabe, 中嶋 聖介, 渡邉 祥司, 石田 明広

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :921

المؤلفون: Akihiro Ishida, Mamoru Shibata, Seisuke Nakashima, Shoji Watanabe, 中嶋 聖介, 柴田 衛, 渡邉 祥司, 石田 明広

المصدر: JSAP Annual Meetings Extended Abstracts. 2015, :563

المؤلفون: Leonardi, S. G., Wlodarski, W., Li, Y., Donato, N., Bonavita, A., Neri, G.

المساهمون: Leonardi, S. G., Wlodarski, W., Li, Y., Donato, N., Bonavita, A., Neri, G.

مصطلحات موضوعية: Ammonia, Annealing, Chemical sensor, Gas detector, Heterojunction, Semiconducting tin compound, Sulfur compound, Thin film, Tin oxides, 2D-SnS2 flake, Annealing temperature, Annealing treatment, Conductometric gas sensor, Conductometric sensor, Controlled condition, Electrical modification, Electrical resistances, IV-VI semiconductor, Gas sensor, Heterostructure, NH3

وصف الملف: ELETTRONICO

Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000457845900052; firstpage:440; lastpage:449; numberofpages:10; journal:JOURNAL OF ALLOYS AND COMPOUNDS; http://hdl.handle.net/11570/3135404; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-85058214705; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85058214705&doi=10.1016%2fj.jallcom.2018.12.110&partnerID=40&md5=73810b23ed14bab84166072c4e5f7cf7

الاتاحة: http://hdl.handle.net/11570/3135404
https://doi.org/10.1016/j.jallcom.2018.12.110
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85058214705&doi=10.1016%2fj.jallcom.2018.12.110&partnerID=40&md5=73810b23ed14bab84166072c4e5f7cf7

المؤلفون: Rogacheva, E. I.

مصطلحات موضوعية: 2D-nanostructures, quantum size effects (QSEs), physics of thermoelectricity, thin films, thermoelectric properties, quantum size effects, narrow-gap IV–VI semiconductor compounds

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=od______3033::1ddcd4c748b386e3db4e1f52c1006a8e
http://repository.kpi.kharkov.ua/handle/KhPI-Press/61785

المؤلفون: 成石 憲彦, 杉山 裕太郎, 石田 明広, 立岡 浩一

المصدر: JSAP Annual Meetings Extended Abstracts. 2011, :2064

المؤلفون: 伊佐治 祐也, 小林 真也, 横山 竜也, 樹神 啓司, 石田 明広

المصدر: JSAP Annual Meetings Extended Abstracts. 2011, :1140

المؤلفون: Egorova, Svetlana G., Chernichkin, Vladimir I., Dudnik, Anna O., Kasiyan, Vladimir A., Chernyak, Leonid

المصدر: Scopus Export 2015-2019

مصطلحات موضوعية: IV-VI semiconductor materials, photoelectro magnetic effect, surface conductivity, terahertz, Topological insulators (TIs)

Relation: https://stars.library.ucf.edu/scopus2015/1084

الاتاحة: https://stars.library.ucf.edu/scopus2015/1084

المؤلفون: Berchenko, Nicolas, Savchyn, Volodymyr, Fadeev, Sergey, Afonin,Oleg, Rysz, Jakub, Trzyna, Malgorzata, Cebulski, Józef

مصطلحات موضوعية: IV–VI semiconductor compounds, oxide coating, ternary lead–tellurium oxides, Pb^{2+} intracenter luminescence, TOF-SIMS, Rutherford backscattering spectroscopy

Relation: http://ruj.uj.edu.pl/xmlui/handle/item/7441

الاتاحة: http://ruj.uj.edu.pl/xmlui/handle/item/7441
https://doi.org/10.1016/j.mssp.2013.12.033

المؤلفون: Schulz, N., Hopkins, J.-M., Rattunde, Marcel, Burns, D., Wagner, J.

مصطلحات موضوعية: laser, semiconductor disc laser, Halbleiter-Scheibenlaser, VECSEL, OPSDL, infrared, Infrarot, III-V semiconductor, III-V Halbleiter, IV-VI semiconductor, IV-VI Halbleiter, Brillanz, brilliance

Time: 667, 621

Relation: Laser & photonics reviews; https://publica.fraunhofer.de/handle/publica/215505

الاتاحة: https://publica.fraunhofer.de/handle/publica/215505
https://doi.org/10.1002/lpor.200710037

المؤلفون: Schulz, N., Hopkins, J.-M., Rattunde, M., Burns, D., Wagner, J.

المساهمون: Publica

مصطلحات موضوعية: IV-VI Halbleiter, infrared, Infrarot, brilliance, semiconductor disc laser, IV-VI semiconductor, III-V Halbleiter, Halbleiter-Scheibenlaser, VECSEL, Brillanz, OPSDL, III-V semiconductor, laser

URL الوصول: https://explore.openaire.eu/search/publication?articleId=od_______610::ab09053f3e3540160a6830bc2ebc93cd
https://publica.fraunhofer.de/handle/publica/215505

المؤلفون: Herrmann, K.H., Möllmann, K.-P., Tomm, J.W., Böttner, H., Lambrecht, A., Tacke, M.

مصطلحات موضوعية: Halbleiter, IV VI Halbleiter, IV VI semiconductor, optical property, optische Eigenschaft, semiconductor

Time: 621, 530

Relation: Journal of applied physics; https://publica.fraunhofer.de/handle/publica/182028

الاتاحة: https://publica.fraunhofer.de/handle/publica/182028
https://doi.org/10.1063/1.351752

المؤلفون: Zogg, H., Maissen, C., Masek, J., Blunier, S., Lambrecht, A., Tacke, M.

مصطلحات موضوعية: Fotodiode, Heteroepitaxie, heteroepitaxy, infrared detector, Infrarot Detektor, IV-VI-Halbleiter, IV-VI semiconductor, photo diode

Time: 621, 530

Relation: International Conference on Narrow Gap Semiconductors and Related Materials 1989; Semiconductor Science and Technology; https://publica.fraunhofer.de/handle/publica/178485

الاتاحة: https://publica.fraunhofer.de/handle/publica/178485
https://doi.org/10.1088/0268-1242/5/3S/012

المؤلفون: Röthlein, P., Pascher, H., Bauer, G., Tacke, M.

مصطلحات موضوعية: band parameter, Bandparameter, IV-VI-Halbleiter, IV-VI semiconductor, magnetic semiconductor, magnetischer Halbleiter, magneto-optic, Magnetooptik, Spin-flip

Time: 621, 530

Relation: Semiconductor Science and Technology; https://publica.fraunhofer.de/handle/publica/178347

الاتاحة: https://publica.fraunhofer.de/handle/publica/178347
https://doi.org/10.1088/0268-1242/5/3S/032