يعرض 1 - 20 نتائج من 4,332 نتيجة بحث عن '"INDIUM gallium nitride"', وقت الاستعلام: 0.51s تنقيح النتائج
  1. 1
    Academic Journal
    Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics.

    المؤلفون: Lex, A.1,2,3,4 (AUTHOR) andreas.lex@ams-osram.com, Avramescu, A.1 (AUTHOR), Vögl, F.1,4 (AUTHOR), Brandl, M.1 (AUTHOR), Binder, M.1 (AUTHOR), Hetzl, M.1 (AUTHOR), Spende, H.2,3,4 (AUTHOR), Wolter, S.2,3,4 (AUTHOR), Waag, A.2,3,4 (AUTHOR), von Malm, N.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 7/14/2024, Vol. 136 Issue 2, p1-9. 9p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *SURFACE passivation, *QUANTUM efficiency, *SURFACE recombination, *SURFACE defects


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  2. 2
    Academic Journal
    Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution.

    المؤلفون: Li, Xuefeng1 (AUTHOR) xuefengli@unm.edu, DeJong, Elizabeth1 (AUTHOR), Armitage, Rob2 (AUTHOR), Feezell, Daniel1 (AUTHOR)

    المصدر: Journal of Applied Physics. 1/21/2024, Vol. 135 Issue 3, p1-10. 10p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *QUANTUM wells, *SURFACE recombination, *LIGHT emitting diodes, *CARRIER density


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  3. 3
    Academic Journal
    Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers.

    المؤلفون: Kudryavtsev, K. E.1 (AUTHOR) konstantin@ipmras.ru, Andreev, B. A.1 (AUTHOR), Lobanov, D. N.1 (AUTHOR), Kalinnikov, M. A.1 (AUTHOR), Yablonskiy, A. N.1 (AUTHOR), Yunin, P. A.1 (AUTHOR), Novikov, A. V.1 (AUTHOR), Krasilnik, Z. F.1 (AUTHOR)

    المصدر: Journal of Applied Physics. 12/7/2023, Vol. 134 Issue 21, p1-8. 8p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *STIMULATED emission, *CONDUCTION bands, *VALENCE bands, *HOLE mobility, *CHARGE carrier mobility


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  4. 4
    Academic Journal
    Study of carrier diffusion in InGaN/GaN quantum wells: Impact of quantum well thickness and substrate type.

    المؤلفون: Litschgi, Simon1 (AUTHOR) simon.litschgi@cea.fr, Dussaigne, Amélie1 (AUTHOR), Barbier, Frédéric1 (AUTHOR), Veux, Guillaume1 (AUTHOR), Cibié, Anthony1 (AUTHOR), Gayral, Bruno2 (AUTHOR), Rol, Fabian1 (AUTHOR) fabian.rol@cea.fr

    المصدر: Applied Physics Letters. 1/6/2025, Vol. 126 Issue 1, p1-6. 6p.

    مصطلحات موضوعية: *CHARGE carrier lifetime, *INDIUM gallium nitride, *STARK effect, *SUBSTRATES (Materials science), *GALLIUM nitride


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  5. 5
    Academic Journal
    High external quantum efficiency in ultra-small amber InGaN microLEDs scaled to 1 μm.

    المؤلفون: Smith, Jordan M.1 (AUTHOR), Li, Panpan1 (AUTHOR) panpanli@ucsb.edu, Ley, Ryan2 (AUTHOR), Wong, Matthew S.1 (AUTHOR), Gordon, Michael J.2 (AUTHOR), Speck, James S.1 (AUTHOR), Nakamura, Shuji1,3 (AUTHOR), DenBaars, Steven P.1,3 (AUTHOR) spdenbaars@ucsb.edu

    المصدر: Applied Physics Letters. 12/16/2024, Vol. 125 Issue 25, p1-8. 8p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *SURFACE recombination, *AUGMENTED reality, *DISRUPTIVE innovations, *INDIUM, *LED displays


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  6. 6
    Academic Journal
    Optical Investigations of Nano‐LEDs Based on Submicron‐Sized III‐Nitride Platelets.

    المؤلفون: Gustafsson, Anders1 (AUTHOR) anders.gustafsson@ftf.lth.se, Bi, Zhaoxia1,2 (AUTHOR), Samuelson, Lars1,3 (AUTHOR)

    المصدر: Physica Status Solidi (B). Dec2024, p1. 5p. 6 Illustrations.

    مصطلحات موضوعية: *INDIUM gallium nitride, *INDIUM, *SUBSTRATES (Materials science), *BLOOD platelets, *DIODES


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  7. 7
    Academic Journal
    Correlated photoluminescence blinking phenomenon on InGaN/GaN nanopillar structures.

    المؤلفون: Oikawa, K.1 (AUTHOR) n235301d@yokohama-cu.ac.jp, Okamoto, K.2 (AUTHOR), Funato, M.3 (AUTHOR), Kawakami, Y.3 (AUTHOR), Micheletto, R.1 (AUTHOR) ruggero@yokohama-cu.ac.jp

    المصدر: Applied Physics Letters. 12/9/2024, Vol. 125 Issue 24, p1-7. 7p.

    مصطلحات موضوعية: *QUANTUM wells, *INDIUM gallium nitride, *PHOTOLUMINESCENCE, *PHOTOEXCITATION, *SYNCHRONIZATION


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  8. 8
    Academic Journal
    Short range optical communication with GaN‐on‐Si microLED and microPD matrices.

    المؤلفون: Le Maitre, Patrick1 (AUTHOR) patrick.lemaitre@cea.fr, Cibié, Anthony1 (AUTHOR), Rol, Fabian1 (AUTHOR), Jacob, Stéphanie1 (AUTHOR), Michit, Nicolas1 (AUTHOR), El Badaoui, Sultan1 (AUTHOR), Simon, Julia1 (AUTHOR), Miralles, Bastien1 (AUTHOR), Ballot, Clément1 (AUTHOR), Aventurier, Bernard1 (AUTHOR), De Martino, Paolo1 (AUTHOR)

    المصدر: Journal of the Society for Information Display. Dec2024, Vol. 32 Issue 12, p797-814. 18p.

    مصطلحات موضوعية: *OPTICAL communications, *INDIUM gallium nitride, *VISIBLE spectra, *GALLIUM nitride, *LIGHTING, *DATA transmission systems


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  9. 9
    Academic Journal
    Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation.

    المؤلفون: Ji, Yihong1 (AUTHOR) yj335@cam.ac.uk, Frentrup, Martin1 (AUTHOR), Zhang, Xiaotian1 (AUTHOR), Pongrácz, Jakub1,2,3 (AUTHOR), Fairclough, Simon M.1 (AUTHOR), Liu, Yingjun4 (AUTHOR), Zhu, Tongtong4 (AUTHOR), Oliver, Rachel A.1,4 (AUTHOR)

    المصدر: Journal of Applied Physics. 10/14/2023, Vol. 134 Issue 14, p1-10. 10p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *LATTICE constants, *TRANSMISSION electron microscopy, *NUCLEAR forces (Physics), *QUANTUM wells


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  10. 10
    Academic Journal
    Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs.

    المؤلفون: Roccato, Nicola1 roccatonic@dei.unipd.it, Piva, Francesco1, Buffolo, Matteo1, Santi, Carlo De1, Trivellin, Nicola1,2, Haller, Camille3, Carlin, Jean-François3, Grandjean, Nicolas3, Meneghesso, Gaudenzio1, Zanoni, Enrico1, Meneghini, Matteo1,4

    المصدر: Journal of Physics D: Applied Physics. 11/29/2024, Vol. 57 Issue 47, p1-8. 8p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *LIGHT emitting diodes


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  11. 11
    Academic Journal
    Hybrid High-Power AlGaN/CdZnO/GaN/AlGaN HEMT with High Breakdown Voltage.

    المؤلفون: Kim, Bonghwan1 (AUTHOR) bhkim@cu.ac.kr, Park, Seung-Hwan1 (AUTHOR)

    المصدر: Materials (1996-1944). Nov2024, Vol. 17 Issue 22, p5560. 9p.

    مصطلحات موضوعية: *BREAKDOWN voltage, *INDIUM gallium nitride, *GALLIUM nitride, *HIGH voltages, *ELECTRIC fields, *MODULATION-doped field-effect transistors

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  12. 12
    Academic Journal
    Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate.

    المؤلفون: Kim, Bonghwan1 (AUTHOR) bhkim@cu.ac.kr, Park, Seung-Hwan1 (AUTHOR)

    المصدر: Materials (1996-1944). Nov2024, Vol. 17 Issue 22, p5515. 9p.

    مصطلحات موضوعية: *BREAKDOWN voltage, *INDIUM gallium nitride, *GALLIUM nitride, *SUBSTRATES (Materials science), *MODULATION-doped field-effect transistors

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  13. 13
    Academic Journal
    Spontaneously Integrated Multicolor InGaN Micro‐Light‐Emitting Diodes for Spectrum‐Controllable Broadband Light Sources.

    المؤلفون: Matsuda, Yoshinobu1 (AUTHOR) yoshinobu.matsuda@optomater.kuee.kyoto-u.ac.jp, Miyawaki, Haruyoshi1 (AUTHOR), Funato, Mitsuru1 (AUTHOR), Kawakami, Yoichi1 (AUTHOR)

    المصدر: Physica Status Solidi - Rapid Research Letters. Nov2024, Vol. 18 Issue 11, p1-7. 7p.

    مصطلحات موضوعية: *LIGHT sources, *INDIUM gallium nitride, *VISIBLE spectra, *NITRIDES, *DIODES


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  14. 14
    Academic Journal
    True‐Red InGaN Light‐Emitting Diodes for Display Applications.

    المؤلفون: Armitage, Robert1 (AUTHOR) robert.armitage@lumileds.com, Ren, Zhongmin1 (AUTHOR), Holmes, Mark1 (AUTHOR), Flemish, Joseph1 (AUTHOR)

    المصدر: Physica Status Solidi - Rapid Research Letters. Nov2024, Vol. 18 Issue 11, p1-9. 9p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *DIGITAL cinematography, *QUANTUM efficiency, *SUBSTRATES (Materials science), *EPITAXY


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  15. 15
    Academic Journal
    Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography.

    المؤلفون: Takeda, Naofumi1 (AUTHOR) takeda.n@qoe.eei.eng.osaka-u.ac.jp, Uemukai, Masahiro1 (AUTHOR), Tanikawa, Tomoyuki1 (AUTHOR) tanikawa@eei.eng.osaka-u.ac.jp, Katayama, Ryuji1 (AUTHOR)

    المصدر: Physica Status Solidi (B). Nov2024, Vol. 261 Issue 11, p1-6. 6p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *EPITAXY, *GALLIUM nitride, *SURFACE morphology, *STRIPES


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  16. 16
    Academic Journal
    Correlative Micro‐Photoluminescence Study on Hybrid Quantum‐Well InGaN Red Light‐Emitting Diodes.

    المؤلفون: Zhang, Zhaozong1 (AUTHOR) zhang.zhaozong.28n@st.kyoto-u.ac.jp, Ishii, Ryota1 (AUTHOR), Shojiki, Kanako1 (AUTHOR), Funato, Mitsuru1 (AUTHOR), Iida, Daisuke2 (AUTHOR), Ohkawa, Kazuhiro2 (AUTHOR), Kawakami, Yoichi1 (AUTHOR) kawakami@kuee.kyoto-u.ac.jp

    المصدر: Physica Status Solidi (B). Nov2024, Vol. 261 Issue 11, p1-5. 5p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *QUANTUM wells, *INDIUM, *DIODES, *SPECTROMETRY


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  17. 17
    Academic Journal
    Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO4 Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy.

    المؤلفون: Kubo, Yuta1 (AUTHOR), Deura, Momoko2 (AUTHOR), Yamada, Yasuhiro1 (AUTHOR), Fujii, Takashi1 (AUTHOR), Araki, Tsutomu1 (AUTHOR) tara@se.ritsumei.ac.jp

    المصدر: Physica Status Solidi (B). Nov2024, Vol. 261 Issue 11, p1-6. 6p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *SUBSTRATES (Materials science), *DISLOCATION density, *SURFACE roughness, *LOW temperatures


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  18. 18
    Academic Journal
    An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens‐Shaped GaN Microstructures via Lower‐Temperature Growth.

    المؤلفون: Fukushige, Shogo1 (AUTHOR), Matsuda, Yoshinobu1 (AUTHOR), Funato, Mitsuru1 (AUTHOR), Kawakami, Yoichi1 (AUTHOR) kawakami@kuee.kyoto-u.ac.jp

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Nov2024, Vol. 221 Issue 21, p1-6. 6p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *CRYSTAL orientation, *GALLIUM nitride, *EPITAXY, *MICROSTRUCTURE


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  19. 19
    Academic Journal
    High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation.

    المؤلفون: Altinkaya, Cesur1 (AUTHOR), Kirilenko, Pavel2 (AUTHOR), Iida, Daisuke2 (AUTHOR) daisuke.iida@kaust.edu.sa, Ohkawa, Kazuhiro2 (AUTHOR)

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Nov2024, Vol. 221 Issue 21, p1-6. 6p.

    مصطلحات موضوعية: *INDIUM gallium nitride, *DEBYE temperatures, *QUANTUM efficiency, *POWER density, *PLASMA temperature, *HYDROGEN plasmas


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  20. 20
    Academic Journal
    High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes.

    المؤلفون: Deng, Chuhan1 (AUTHOR), Chen, Zhizhong1,2,3 (AUTHOR) zzchen@pku.edu.cn, Dong, Boyan1 (AUTHOR), Pan, Zuojian1 (AUTHOR), Zhang, Haodong1 (AUTHOR), Chen, Yian1 (AUTHOR), Li, Yuchen1 (AUTHOR), Wang, Daqi1 (AUTHOR), Hu, Ling1 (AUTHOR), Chen, Weihua1 (AUTHOR), Jiao, Fei1,4 (AUTHOR), Kang, Xiangning1 (AUTHOR), Yuan, Lin5 (AUTHOR), Zhu, Jianfeng5 (AUTHOR), Xia, Chenhui5 (AUTHOR), Wang, Qi2 (AUTHOR), Zhang, Guoyi1,2 (AUTHOR), Shen, Bo1,3 (AUTHOR)

    المصدر: Physica Status Solidi. A: Applications & Materials Science. Nov2024, Vol. 221 Issue 21, p1-8. 8p.

    مصطلحات موضوعية: *QUANTUM efficiency, *INDIUM gallium nitride, *DIODES, *ELECTRODES, *PIXELS


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