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1Academic Journal
المؤلفون: Limpijumnong, Sukit
المساهمون: SURANAREE UNIV OF TECHNOLOGY NAKHON RATCHASIMA (THAILAND)
المصدر: DTIC
مصطلحات موضوعية: Metallurgy and Metallography, ALLOYS, NITRIDES, APPROXIMATION(MATHEMATICS), GROUP III COMPOUNDS, X RAY ABSORPTION ANALYSIS, FIRST PRINCIPLES CALCULATIONS, DEFECT ANALYSIS, INDIUM COMPOUNDS, GALLIUM NITRIDES, WIDE GAP SEMICONDUCTORS, ALUMINUM NITRIDES, CRYSTAL STRUCTURE, THAILAND, CONDENSED MATTER PHYSICS, DEFECTS IN SEMICONDUCTOR, III-N COMPOUNDS, FOREIGN REPORTS
وصف الملف: text/html
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2Academic Journal
المؤلفون: Yoon, Euijoon
المساهمون: SEOUL NATIONAL UNIV (REPUBLIC OF KOREA) SCHOOL OF MATERIALS SCIENCE AND ENGINEERING
المصدر: DTIC
مصطلحات موضوعية: Industrial Chemistry and Chemical Processing, Inorganic Chemistry, Optics, PHOTOLUMINESCENCE, ORGANOMETALLIC COMPOUNDS, GALLIUM NITRIDES, CHEMICAL VAPOR DEPOSITION, QUANTUM DOTS, INDIUM GALLIUM ARSENIDES, EMISSION, RADIATION, BARRIERS, KOREA, ELECTRON PROBES, MICROANALYSIS, RECOMBINATION REACTIONS, X RAY DIFFRACTION, EFFICIENCY, LAYERS, GROWTH(GENERAL), III-N COMPOUNDS, METALORGANIC CHEMICAL VAPOR DEPOSITION, MOCVD(METALORGANIC CHEMICAL VAPOR DEPOSITION), FOREIGN REPORTS
وصف الملف: text/html
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3Electronic Resource
المصدر: DTIC
مصطلحات الفهرس: Metallurgy and Metallography, ALLOYS, NITRIDES, APPROXIMATION(MATHEMATICS), GROUP III COMPOUNDS, X RAY ABSORPTION ANALYSIS, FIRST PRINCIPLES CALCULATIONS, DEFECT ANALYSIS, INDIUM COMPOUNDS, GALLIUM NITRIDES, WIDE GAP SEMICONDUCTORS, ALUMINUM NITRIDES, CRYSTAL STRUCTURE, THAILAND, CONDENSED MATTER PHYSICS, DEFECTS IN SEMICONDUCTOR, III-N COMPOUNDS, FOREIGN REPORTS, Text