المؤلفون: Hye Bin Cha, Yao Zhang, Hyun-Yong Yu, Yi Jae Lee

المصدر: Micro and Nano Systems Letters, Vol 12, Iss 1, Pp 1-10 (2024)

مصطلحات موضوعية: Flexible probe, Multi-neurotransmitters, Balance monitoring, Reduced graphene oxide, PEDOT:PSS, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2213-9621

URL الوصول: https://doaj.org/article/a1dfeb3c4721411cb64640cfc2f28611

المؤلفون: Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

المصدر: Applied Surface Science Advances, Vol 25, Iss , Pp 100676- (2025)

مصطلحات موضوعية: A-IGZO, Contact resistance, Schottky barrier height, Metal-interlayer-semiconductor, Oxygen areal density, Plasma treatment, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial electrochemistry, TP250-261

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2666523924001041; https://doaj.org/toc/2666-5239

URL الوصول: https://doaj.org/article/d8771e0aaf3942fbabffe4d2a2a1a8c3

المؤلفون: Kyu Hyun Han, Seung-Hwan Kim, Seung-Geun Kim, Jong-Hyun Kim, Sungjoo Song, Hyun-Yong Yu

المصدر: npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)

مصطلحات موضوعية: Materials of engineering and construction. Mechanics of materials, TA401-492, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2397-7132

URL الوصول: https://doaj.org/article/86c8de4baa87489b80fff6ffc3cd64de

المؤلفون: Eunyoung Park, Hyun-Yong Yu

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 752-759 (2024)

مصطلحات موضوعية: Technology computer-aided design (TCAD) simulation, 3D NAND, PUC, peripheral reliability, hydrogen, NBTI, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10568956/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/d57beea389344f48beaf8ee6ddf4281f

المؤلفون: Seung-Geun Jung, Seong-Ji Min, Hyun-Yong Yu

المصدر: IEEE Access, Vol 12, Pp 153203-153208 (2024)

مصطلحات موضوعية: DRAM cell transistor, novel spacer, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10716478/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/f7da570b6f3f416abd499bd0f2be39bb

المؤلفون: Kyu Hyun Han, Seung-Geun Kim, Seung-Hwan Kim, Jong-Hyun Kim, Seong-Hyun Hwang, Min-Su Kim, Sung-Joo Song, Hyun-Yong Yu

المصدر: Materials Today Advances, Vol 21, Iss , Pp 100475- (2024)

مصطلحات موضوعية: Negative differential resistance, Peak voltage, Peak-to-valley current ratio, Ternary inverter, Multi-valued logic, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590049824000122; https://doaj.org/toc/2590-0498

URL الوصول: https://doaj.org/article/93f829ce55234bb092f638cd50fc90e1

المؤلفون: Seong-Hyun Hwang, Seung-Hwan Kim, Seung-Geun Kim, Min-Su Kim, Kyu-Hyun Han, Sungjoo Song, Jong-Hyun Kim, Euyjin Park, Dong-Gyu Jin, Hyun-Yong Yu

المصدر: Materials Today Advances, Vol 18, Iss , Pp 100367- (2023)

مصطلحات موضوعية: Atomic threshold switching field-effect transistors, 2D channel, Threshold voltage modulation, Low subthreshold swing, High on–off current ratio, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2590049823000279; https://doaj.org/toc/2590-0498

URL الوصول: https://doaj.org/article/fbed0384022349f4aab50eed857959e3

المؤلفون: Min‐Su Kim, Euyjin Park, Seung‐Geun Kim, Jae‐Hyeun Park, Seung‐Hwan Kim, Kyu‐Hyun Han, Hyun‐Yong Yu

المصدر: Advanced Materials Interfaces, Vol 10, Iss 7, Pp n/a-n/a (2023)

مصطلحات موضوعية: conductive filament, electrochemical metallization threshold switch, insertion layer, platinum diselenide, two‐dimensional material, Physics, QC1-999, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2196-7350

URL الوصول: https://doaj.org/article/890ae48c6827489c956764f94cb6700b

المؤلفون: Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, Hyun-Yong Yu

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 78-82 (2022)

مصطلحات موضوعية: Complementary FET (CFET), Nanosheet FET (NSHFET), CMOS inverter, Technology computer-aided design~(TCAD), 3-nm technology node, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9656560/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/935180d87d9d4431acbff4cf8f7c26ba

المؤلفون: Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, Hyun-Yong Yu

المصدر: IEEE Access, Vol 10, Pp 41112-41118 (2022)

مصطلحات موضوعية: Complementary FET (CFET), nanosheet FET (NSHFET), technology computer-aided design (TCAD), 3-nm technology node, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9755956/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/9dfb2d635fff497a8d6075f084095fca

المؤلفون: Uikyu Chae, Jeongsoo Park, Jeong-Geun Kim, Hyun-Yong Yu, Il-Joo Cho

المصدر: Micro and Nano Systems Letters, Vol 9, Iss 1, Pp 1-7 (2021)

مصطلحات موضوعية: CMOS VCO, MEMS tunable inductor, RF MEMS, Technology

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2213-9621

URL الوصول: https://doaj.org/article/76dbe3bc5e6047cf9704192049a65b48

المؤلفون: Dongwon Jang, Seung-Geun Jung, Seong-Ji Min, Hyun-Yong Yu

المصدر: IEEE Access, Vol 9, Pp 158116-158121 (2021)

مصطلحات موضوعية: Complementary FET (CFET), self-heating effect (SHE), 3D monolithic integration, TCAD, thermal resistance, time delay, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9627130/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/d5536c5b43744717b7aae583d0e2e846

المؤلفون: Seung‐Geun Kim, Seung‐Hwan Kim, Gwang‐Sik Kim, Hyeok Jeon, Taehyun Kim, Hyun‐Yong Yu

المصدر: Advanced Science, Vol 8, Iss 12, Pp n/a-n/a (2021)

مصطلحات موضوعية: atomic threshold switching field‐effect transistors, high detectivity, infrared detectable phototransistors, low subthreshold swing, 2D channel, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/5ca18e8d00774c56997d820a449d847d

المؤلفون: Seung-Geun Jung, Hyun-Yong Yu

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 1119-1124 (2019)

مصطلحات موضوعية: Junctionless FET, germanium, metal-inter layer-semiconductor source/drain, 3-D TCAD, random dopant fluctuation (RDF), line-edge roughness (LER), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8883266/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/594d4b86bf754983a42769f597b4b6ce

المؤلفون: Jinok Kim, Keun Heo, Dong‐Ho Kang, Changhwan Shin, Sungjoo Lee, Hyun‐Yong Yu, Jin‐Hong Park

المصدر: Advanced Science, Vol 6, Iss 21, Pp n/a-n/a (2019)

مصطلحات موضوعية: HCl doping, p‐doping, photodetector, ReSe2, selective doping, transition‐metal dichalcogenides (TMDs), Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2198-3844

URL الوصول: https://doaj.org/article/c85410b4b0984faaa803a0d7cf7668cc

المؤلفون: Sungjoo Song, Seung-Hwan Kim, Kyu-Hyun Han, Hyung-jun Kim, Hyun-Yong Yu

مصطلحات موضوعية: Medicine, Cancer, Infectious Diseases, Space Science, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, self alignment effect, schottky barrier height, performance device applications, induced gap states, extremely challenging problem, excellent ohmic contacts, si substrate resulted, work function differences, cmos logical circuitry, drain contact structure, level using graphene, gr effectively modulated, metal work function, one semiconductor type, sbh values reduced, work function, contact structure, type si, sbh values, effectively alleviated, contact structures, contact resistance, contact metal, universal source

Relation: https://figshare.com/articles/journal_contribution/In-Depth_Analysis_on_Self_Alignment_Effect_of_the_Fermi-Level_Using_Graphene_on_Both_n-_and_p_Type_Semiconductors/24700965

الاتاحة: https://doi.org/10.1021/acsami.3c14386.s001
https://figshare.com/articles/journal_contribution/In-Depth_Analysis_on_Self_Alignment_Effect_of_the_Fermi-Level_Using_Graphene_on_Both_n-_and_p_Type_Semiconductors/24700965

المؤلفون: June Park (1880791), Euyjin Park (7289405), Seung-Geun Kim (6287879), Dong-Gyu Jin (11839977), Hyun-Yong Yu (1571980)

مصطلحات موضوعية: Biotechnology, Cancer, Science Policy, Space Science, Biological Sciences not elsewhere classified, Mathematical Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, 400 ° c, 4 %, respectively, 300 ° c, 1 h decreased, pattern recognition accuracy, oxygen atom movement, good thermal stability, pattern recognition simulation, top electrode metal, neuromorphic system based, thermal degradation effect, thermal degradation caused, thermal degradation, thermal stability, top electrode, neuromorphic system, te metal, oxygen affinity, neuromorphic systems, based devices, te ), ta te

Relation: https://figshare.com/articles/journal_contribution/Analysis_of_the_Thermal_Degradation_Effect_on_a_HfO_sub_2_sub_Based_Memristor_Synapse_Caused_by_Oxygen_Affinity_of_a_Top_Electrode_Metal_and_on_a_Neuromorphic_System/17206788

الاتاحة: https://doi.org/10.1021/acsaelm.1c01000.s001

المؤلفون: Si Joon Kim, Jaidah Mohan, Harrison Sejoon Kim, Su Min Hwang, Namhun Kim, Yong Chan Jung, Akshay Sahota, Kihyun Kim, Hyun-Yong Yu, Pil-Ryung Cha, Chadwin D. Young, Rino Choi, Jinho Ahn, Jiyoung Kim

المصدر: Materials; Volume 13; Issue 13; Pages: 2968

مصطلحات موضوعية: atomic layer deposition, ferroelectric film, Hf 0.5 Zr 0.5 O 2, low thermal budget process, TiN electrode

وصف الملف: application/pdf

Relation: Thin Films and Interfaces; https://dx.doi.org/10.3390/ma13132968

الاتاحة: https://doi.org/10.3390/ma13132968

المؤلفون: Seung-Geun Jung, Jeong-Kyu Kim, Hyun-Yong Yu

المصدر: IEEE Transactions on Electron Devices. 69:930-935

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6b112c474ed84e9c8cfe4c26fa057482
https://doi.org/10.1109/ted.2022.3143473

المؤلفون: June Park, Euyjin Park, Seung-Geun Kim, Dong-Gyu Jin, Hyun-Yong Yu

المصدر: ACS Applied Electronic Materials. 3:5584-5591

مصطلحات موضوعية: Materials Chemistry, Electrochemistry, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::72744a5bd4d785e4afdc912b787b2380
https://doi.org/10.1021/acsaelm.1c01000