المؤلفون: Hui Shen, Hui-Wen Yuan, Shao-Feng Ding, Albert Chin, Pengfei Wang, Daming Huang, Ming-Fu Li, Jun-Jie Li, Yifang Chen, Jinhai Shao

المصدر: IEEE Electron Device Letters. 38:677-680

مصطلحات موضوعية: 010302 applied physics, Physics, Gate dielectric, Time constant, Order (ring theory), 02 engineering and technology, Dielectric, Trapping, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Phase (matter), 0103 physical sciences, MOSFET, Electrical and Electronic Engineering, Atomic physics, 0210 nano-technology, Energy (signal processing)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::46a7ece0cf9f96fee4c0144461da600d
https://doi.org/10.1109/led.2017.2679221

المؤلفون: Pengfei Wang, Jinhai Shao, Daming Huang, Shi-Jin Ding, Yifang Chen, Wen-Jun Liu, Jun-Jie Li, Hui Shen, Ming-Fu Li, Albert Chin, Hui-Wen Yuan

المصدر: IEEE Electron Device Letters. 37:516-518

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Noise (signal processing), Infrasound, Gate dielectric, Electrical engineering, Schottky diode, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Temperature measurement, Electronic, Optical and Magnetic Materials, Logic gate, 0103 physical sciences, MOSFET, Absorption (logic), Electrical and Electronic Engineering, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::032bd380db4fa9555e68d8538cd7eb83
https://doi.org/10.1109/led.2016.2536100

المؤلفون: Hui-Wen Yuan, Hui Shen, Jun-Jie Li, Jinhai Shao, Daming Huang, Yi-Fang Chen, Wang, P. F., Ding, S. J., Chin, Albert, Ming-Fu Li

المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ; page 481-483

الاتاحة: http://dx.doi.org/10.1109/icsict.2016.7998957
http://xplorestaging.ieee.org/ielx7/7987614/7998614/07998957.pdf?arnumber=7998957

المؤلفون: Daming Huang, Hui Shen, Sitong Bu, Hui-Wen Yuan, Mingyue He

المصدر: ASICON

مصطلحات موضوعية: Noise power, Materials science, Semiconductor, business.industry, Schottky barrier, Infrasound, Gate dielectric, MOSFET, Optoelectronics, Dielectric, business, Noise (radio)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8f3c1dde3522b047534e04d033b1a5dc
https://doi.org/10.1109/asicon.2017.8252490

المؤلفون: Hui Wen Yuan, Chun Hua Lu, Ya Dong, Ya Ru Ni, Zhong Zi Xu, Yu Shi

المصدر: Advanced Materials Research. :77-80

مصطلحات موضوعية: chemistry.chemical_compound, Materials science, Thermal conductivity, Compressive strength, Volume (thermodynamics), chemistry, Aluminate, Composite number, General Engineering, Cementitious, Composite material, Thermal energy storage, Heat capacity

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6fc890db31ba0eaf8c05aba625ff76f9
https://doi.org/10.4028/www.scientific.net/amr.887-888.77

المؤلفون: Ya Ru Ni, Zhong Zi Xu, Chun Hua Lu, Hui Wen Yuan, Ya Dong

المصدر: Advanced Materials Research. :894-897

مصطلحات موضوعية: Materials science, Inorganic chemistry, General Engineering, Alcohol, Ibuprofen, Tetraethyl orthosilicate, chemistry.chemical_compound, chemistry, Chemical engineering, medicine, Drug release, Calcium silicate hydrate, Fourier transform infrared spectroscopy, Mesoporous material, Drug carrier, medicine.drug

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::84b92d222e9f5dcc2c421b22e28171b3
https://doi.org/10.4028/www.scientific.net/amr.393-395.894

المؤلفون: Jiang, An Quan, Chen, Zhi Hui, Hui, Wen Yuan, Wu, Dongping, Scott, James F.

المصدر: Jiang , A Q , Chen , Z H , Hui , W Y , Wu , D & Scott , J F 2012 , ' Subpicosecond Domain Switching in Discrete Regions of Pb(Zr0.35Ti0.65)O3 Thick Films ' , Advanced Functional Materials , vol. 22 , no. 10 , pp. 2148-2153 . https://doi.org/10.1002/adfm.201102829

مصطلحات موضوعية: stimuli-responsive materials, ferroelectric thick films, domain switching current, domain nucleation time, ONE-DIMENSIONAL NANOSTRUCTURES, LEAD-ZIRCONATE-TITANATE, SIDEWISE MOTION, FERROELECTRICS, NUCLEATION, CAPACITORS, MECHANISM, MEMORIES, FATIGUE, BATIO3

الاتاحة: https://risweb.st-andrews.ac.uk/portal/en/researchoutput/subpicosecond-domain-switching-in-discrete-regions-of-pbzr035ti065o3-thick-films(2b132587-d3fa-4275-b358-24dba70d0206).html
https://doi.org/10.1002/adfm.201102829

المؤلفون: Li, Zhi-Dong, Shen, Zhen-Kui, Hui, Wen-Yuan, Qiu, Zhi-Jun, Qu, Xin-Ping, Chen, Yi-Fang, Liu, Ran

المساهمون: National Basic Research Program of China

المصدر: Microelectronic Engineering ; volume 88, issue 8, page 2037-2040 ; ISSN 0167-9317

الاتاحة: http://dx.doi.org/10.1016/j.mee.2011.01.055
https://api.elsevier.com/content/article/PII:S0167931711000803?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0167931711000803?httpAccept=text/plain

المؤلفون: Jiang, An Quan, Chen, Zhi Hui, Hui, Wen Yuan, Wu, Dongping, Scott, James F.

المصدر: Advanced Functional Materials; May2012, Vol. 22 Issue 10, p2148-2153, 6p

المؤلفون: Jiang, An Quan, Chen, Zhi Hui, Hui, Wen Yuan, Wu, Dongping, Scott, James F.

المصدر: Advanced Functional Materials; May 2012, Vol. 22 Issue: 10 p2148-2153, 6p