المؤلفون: Jiang, S., Lee, K.B., Guiney, I., Miaja, P.F., Zaidi, Z.H., Qian, H., Wallis, D.J., Forsyth, A.J., Humphreys, C.J., Houston, P.A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/112527/10/All-GaN-Integrated_Cascode_Heterojunction_Field_Effect_Transistors.pdf; Jiang, S., Lee, K.B., Guiney, I. et al. (7 more authors) (2017) All-GaN Integrated Cascode Heterojunction Field Effect Transistors. IEEE Transactions on Power Electronics, 32 (11). pp. 8743-8750. ISSN 0885-8993

الاتاحة: https://eprints.whiterose.ac.uk/112527/
https://eprints.whiterose.ac.uk/112527/10/All-GaN-Integrated_Cascode_Heterojunction_Field_Effect_Transistors.pdf

المؤلفون: Qian, H., Lee, K.B., Vajargah, S.H., Novikov, S.V., Guiney, I., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxton, C.T., Humphreys, C.J., Houston, P.A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/109683/7/Novel%20GaN-based%20Vertical%20Heterostructure%20Field%20Effect%20Transistor%20Structures%20Using%20Crystallographic%20KOH%20etching%20and%20Overgrowth.pdf; Qian, H. orcid.org/0000-0003-4597-6325 , Lee, K.B., Vajargah, S.H. et al. (8 more authors) (2017) Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth. Journal of Crystal Growth, 459. pp. 185-188. ISSN 0022-0248

الاتاحة: https://eprints.whiterose.ac.uk/109683/
https://eprints.whiterose.ac.uk/109683/7/Novel%20GaN-based%20Vertical%20Heterostructure%20Field%20Effect%20Transistor%20Structures%20Using%20Crystallographic%20KOH%20etching%20and%20Overgrowth.pdf
https://doi.org/10.1016/j.jcrysgro.2016.12.025

المؤلفون: Qian, H., Lee, K.B., Vajargah, S.Hosseini, Novikov, S.V., Guiney, I., Zhang, S., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxon, C.T., Humphreys, C.J., Houston, P.A.

مصطلحات موضوعية: GaN, PN diode, conduction mechanism, p-type doping, amorphous GaNAs

Relation: https://nottingham-repository.worktribe.com/output/796837; Semiconductor Science and Technology; Volume 31; Issue 6; https://nottingham-repository.worktribe.com/file/796837/1/Characterization%20of%20GaNAs-GaN%20PN%20diode_sn.pdf

الاتاحة: https://doi.org/10.1088/0268-1242/31/6/065020
https://nottingham-repository.worktribe.com/file/796837/1/Characterization%20of%20GaNAs-GaN%20PN%20diode_sn.pdf
https://nottingham-repository.worktribe.com/output/796837

المؤلفون: Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G., Guiney, I., Wallis, D., Humphreys, C.J.

وصف الملف: text

Relation: http://eprints.gla.ac.uk/117294/1/117294.pdf; Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J. , Thayne, I.G. , Guiney, I., Wallis, D. and Humphreys, C.J. (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters , 108(7), 072901. (doi:10.1063/1.4942093 )

الاتاحة: http://eprints.gla.ac.uk/117294/
http://eprints.gla.ac.uk/117294/1/117294.pdf

المؤلفون: Jiang, S., Lee, K.B., Pinchbeck, J., Yin, Y., Houston, P.A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/161402/1/624V%205A%20all-GaN%20integrated%20cascode_Jiang%20et%20al.pdf; Jiang, S., Lee, K.B. orcid.org/0000-0002-5374-2767 , Pinchbeck, J. et al. (2 more authors) (2020) A 624 V 5 A all‐GaN integrated cascode for power‐switching applications. physica status solidi (a), 217 (7). 1900783. ISSN 1862-6300

الاتاحة: https://eprints.whiterose.ac.uk/161402/
https://eprints.whiterose.ac.uk/161402/1/624V%205A%20all-GaN%20integrated%20cascode_Jiang%20et%20al.pdf

المؤلفون: Partida-Manzanera, T., Zaidi, Z.H., Roberts, J.W., Dolmanan, S.B., Lee, K.B., Houston, P.A., Chalker, P.R., Tripathy, S., Potter, R.J.

المصدر: JOURNAL OF APPLIED PHYSICS

مصطلحات موضوعية: TA

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::03b692c3bf3c3afd144d90b925cd6e1b

المؤلفون: Alt, A., Hirshy, H., Jiang, S., Lee, K.B., Casbon, M.A., Chen, P., Houston, P.A., Tasker, P.J., Lees, J.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/149262/1/gain_variation%20%28accepted%29.pdf; Alt, A., Hirshy, H., Jiang, S. et al. (6 more authors) (2019) Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers. IEEE Transactions on Microwave Theory and Techniques, 67 (7). pp. 2495-2504. ISSN 0018-9480

الاتاحة: https://eprints.whiterose.ac.uk/149262/
https://eprints.whiterose.ac.uk/149262/1/gain_variation%20%28accepted%29.pdf

المؤلفون: Singh, M., Karboyan, S., Uren, M.J., Lee, K.B., Zaidi, Z., Houston, P.A., Kuball, M.

Relation: Singh, M., Karboyan, S., Uren, M.J. et al. (4 more authors) (2019) Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers. Microelectronics Reliability, 95. pp. 81-86. ISSN 0026-2714

الاتاحة: https://eprints.whiterose.ac.uk/144779/

المؤلفون: Jiang, S., Lee, K.B., Zaidi, Z.H., Uren, M.J., Kuball, M., Houston, P.A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/143101/3/Field%20Plate%20Designs%20In%20All%20GaN%20Integrated%20Cascode%20-%20Final%20submitted%20version.pdf; Jiang, S. orcid.org/0000-0002-3687-1882 , Lee, K.B. orcid.org/0000-0002-5374-2767 , Zaidi, Z.H. et al. (3 more authors) (2019) Field plate designs in all-GaN cascode heterojunction field-effect transistors. IEEE Transactions on Electron Devices, 66 (4). pp. 1688-1693. ISSN 0018-9383

الاتاحة: https://eprints.whiterose.ac.uk/143101/
https://eprints.whiterose.ac.uk/143101/3/Field%20Plate%20Designs%20In%20All%20GaN%20Integrated%20Cascode%20-%20Final%20submitted%20version.pdf

المؤلفون: Zaidi, Z.H., Lee, K.B., Roberts, J.W., Guiney, I., Qian, H., Jiang, S., Cheong, J.S., Li, P., Wallis, D.J., Humphreys, C.J., Chalker, P.R., Houston, P.A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/131498/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and.pdf; Zaidi, Z.H., Lee, K.B. orcid.org/0000-0002-5374-2767 , Roberts, J.W. et al. (9 more authors) (2018) Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics , 123 (18). 184503. ISSN 0021-8979

الاتاحة: https://eprints.whiterose.ac.uk/131498/
https://eprints.whiterose.ac.uk/131498/1/Effects%20of%20surface%20plasma%20treatment%20on%20threshold%20voltage%20hysteresis%20and.pdf
https://doi.org/10.1063/1.5027822

المؤلفون: Tang, F.Z., Lee, K., Guiney, I., Frentup, M., Barnard, J.S., Divitini, G., Zaidi, Z., Martin, T.L., Bagot, P., Moody, M.P., Humphreys, C.J., Houston, P.A., Oliver, R.A., Wallis, D.J.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/126377/1/Nanoscale%20structural%20and%20chemical%20analysis%20of%20F-implanted%20enhancement-mode.pdf; Tang, F.Z., Lee, K. orcid.org/0000-0002-5374-2767 , Guiney, I. et al. (11 more authors) (2018) Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors. Journal of Applied Physics, 123 (2). 024902. ISSN 0021-8979

الاتاحة: https://eprints.whiterose.ac.uk/126377/
https://eprints.whiterose.ac.uk/126377/1/Nanoscale%20structural%20and%20chemical%20analysis%20of%20F-implanted%20enhancement-mode.pdf
https://doi.org/10.1063/1.5006255

المؤلفون: Lee, K.B., Guiney, I., Jiang, S., Zaidi, Z.H., Qian, H., Wallis, D.J., Uren, M.J., Kuball, M., Humphreys, C.J., Houston, P.A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/98678/1/Enhancement-mode%20Metal-insulator-semiconductor%20GaN-AlInN-GaN%20Heterostructure%20Field%20Effect%20Transistors%20on%20Si%20with%20a%20Threshold%20Voltage%20of%20%2B3.0V%20and%20Blocking%20Voltage%20Above%201000V.pdf; Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778

الاتاحة: https://eprints.whiterose.ac.uk/98678/
https://eprints.whiterose.ac.uk/98678/1/Enhancement-mode%20Metal-insulator-semiconductor%20GaN-AlInN-GaN%20Heterostructure%20Field%20Effect%20Transistors%20on%20Si%20with%20a%20Threshold%20Voltage%20of%20%2B3.0V%20and%20Blocking%20Voltage%20Above%201000V.pdf
https://doi.org/10.7567/APEX.8.036502

المؤلفون: Chatterjee, I., Uren, M.J., Pooth, A., Karboyan, S., Martin-Horcajo, S., Kuball, M., Lee, K.B., Zaidi, Z., Houston, P.A., Wallis, D.J., Guiney, I., Humphreys, C.J.

Relation: Chatterjee, I., Uren, M.J., Pooth, A. et al. (9 more authors) (2016) Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs. In: 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 17-21 Apr 2016, Pasadena, USA. IEEE .

الاتاحة: https://eprints.whiterose.ac.uk/109750/
https://doi.org/10.1109/IRPS.2016.7574529

المؤلفون: Houston, P.A., Helme, J., Wai Keng Ng, Chee Hing Tan

المصدر: 2004 IEEE International Conference on Semiconductor Electronics ; page 5 pp.

الاتاحة: http://dx.doi.org/10.1109/smelec.2004.1620821
http://xplorestaging.ieee.org/ielx5/10782/33949/01620821.pdf?arnumber=1620821

المؤلفون: Zaidi, Z.H., Lee, K.B., Guiney, I., Qian, H., Jiang, S., Wallis, D.J., Humphreys, C.J., Houston, P.A.

وصف الملف: text

Relation: https://eprints.whiterose.ac.uk/98669/1/Sulfuric%20acid%20and%20hydrogen%20peroxide%20surface%20passivation%20effects%20on%20AlGaNGaN%20high%20electron%20mobility%20transistors.pdf; Zaidi, Z.H., Lee, K.B., Guiney, I. et al. (5 more authors) (2014) Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 116. 244501. ISSN 0021-8979

الاتاحة: https://eprints.whiterose.ac.uk/98669/
https://eprints.whiterose.ac.uk/98669/1/Sulfuric%20acid%20and%20hydrogen%20peroxide%20surface%20passivation%20effects%20on%20AlGaNGaN%20high%20electron%20mobility%20transistors.pdf
https://doi.org/10.1063/1.4904923

المؤلفون: Yee, M., Ng, W.K., David, J.P.R., Houston, P.A.

المصدر: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ; page 316-320

الاتاحة: http://dx.doi.org/10.1109/edmo.2002.1174978
http://xplorestaging.ieee.org/ielx5/8328/25995/01174978.pdf?arnumber=1174978

المؤلفون: Liu, H.Y., Airey, R.J., Steer, M.J., Houston, P.A., Sellers, I.R., Mowbray, D.J.

المصدر: International Conference on Molecular Bean Epitaxy ; page 239-240

الاتاحة: http://dx.doi.org/10.1109/mbe.2002.1037848
http://xplorestaging.ieee.org/ielx5/8051/22251/01037848.pdf?arnumber=1037848

المؤلفون: Tan, W.S., Hill, G., Houston, P.A., Low, M.W., Parbrook, P.J., Airey, R.J.

المصدر: The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications ; page 130-135

الاتاحة: http://dx.doi.org/10.1109/edmo.2002.1174943
http://xplorestaging.ieee.org/ielx5/8328/25995/01174943.pdf?arnumber=1174943

المؤلفون: Shu, W.M., Gu, W.D., Wu, J., Xia, G.Q., Houston, P.A.

المصدر: 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) ; volume 47, page 605-607

الاتاحة: http://dx.doi.org/10.1109/icsict.1998.785961
http://xplorestaging.ieee.org/ielx5/6366/17030/00785961.pdf?arnumber=785961

المؤلفون: Plimmer, S.A., David, J.P.R., Herbert, D.C., Rees, G.J., Houston, P.A., Robson, P.N., Grey, R., Pate, M.A., Higgs, A.W., Wight, D.R.

المصدر: 1996 54th Annual Device Research Conference Digest ; page 44-45

الاتاحة: http://dx.doi.org/10.1109/drc.1996.546309
http://xplorestaging.ieee.org/ielx3/3979/11468/00546309.pdf?arnumber=546309