نتائج البحث - "Hoshi, Takuya"

المساهمون: National Research Foundation of Korea (NRF) funded by the Ministry of Science and Information and Communications Technology, Technology Innovation Program, Ministry of Trade, Industry & Energy

المصدر: IEEE Transactions on Electron Devices ; volume 70, issue 6, page 2988-2993 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2023.3268626
http://xplorestaging.ieee.org/ielx7/16/10136238/10113852.pdf?arnumber=10113852

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12

Academic Journal

Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression

المؤلفون: Chakraborty, Surajit, Shin, Ju-Won, Amir, Walid, Shin, Ki-Yong, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Kim, Dae-Hyun, Kim, Tae-Woo

المساهمون: National Research Foundation of Korea, Ministry of Science, ICT and Future Planning

المصدر: Solid-State Electronics ; volume 210, page 108788 ; ISSN 0038-1101

الاتاحة: http://dx.doi.org/10.1016/j.sse.2023.108788
https://api.elsevier.com/content/article/PII:S0038110123002010?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0038110123002010?httpAccept=text/plain

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13

GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers

المؤلفون: Ito, Yoshikaze, Tamai, Seita, Hoshi, Takuya, MIYAMOTO, YASUYUKI

URL الوصول: https://explore.openaire.eu/search/publication?articleId=jairo_______::e1b3634cff660aed5f9229b49a4ce9e1
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887483

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14

Academic Journal

Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile.

المؤلفون: Gotow, Takahiro, Mitsuhara, Manabu, Hoshi, Takuya, Sugiyama, Hiroki, Takenaka, Mitsuru, Takagi, Shinichi

المصدر: Journal of Applied Physics; 12/7/2019, Vol. 126 Issue 21, p1-6, 6p, 1 Diagram, 6 Graphs

مصطلحات موضوعية: TUNNEL field-effect transistors, ANTIMONY, MASS spectrometry, DEUTERIUM

15

Academic Journal

Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers.

المؤلفون: Gotow, Takahiro, Mitsuhara, Manabu, Hoshi, Takuya, Sugiyama, Hiroki, Takenaka, Mitsuru, Takagi, Shinichi

المصدر: Journal of Applied Physics; 6/7/2019, Vol. 125 Issue 21, pN.PAG-N.PAG, 9p, 4 Diagrams, 11 Graphs

مصطلحات موضوعية: METAL oxide semiconductor field-effect transistors, DIELECTRIC properties, MULTILAYERED thin films, ELECTRIC admittance measurement, DISPERSION (Atmospheric chemistry), INTERFACES (Physical sciences)

16

Academic Journal

Corrigendum to “MOCVD-grown compressively strained C-doped In Ga1−As1−Sb with high-In/Sb content for very low turn-on-voltage InP-based DHBTs” [J. Cryst. Growth 404 (2014) 172–176]

المؤلفون: Hoshi, Takuya, Kashio, Norihide, Sugiyama, Hiroki, Yokoyama, Haruki, Kurishima, Kenji, Ida, Minoru, Matsuzaki, Hideaki, Kohtoku, Masaki, Gotoh, Hideki

المصدر: Journal of Crystal Growth ; volume 424, page 80 ; ISSN 0022-0248

الاتاحة: https://doi.org/10.1016/j.jcrysgro.2015.05.001
https://api.elsevier.com/content/article/PII:S0022024815003395?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024815003395?httpAccept=text/plain

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17

Academic Journal

Microsatellite loci in Japanese quail and cross-species amplification in chicken and guinea fowl

المؤلفون: Mizutani Makoto, Minezawa Mitsuru, Takahashi Hideaki, Matsuo Koji, Hoshi Takuya, Inoue-Murayama Miho, Kayang Boniface, Ito Shin'ichi

المصدر: Genetics Selection Evolution, Vol 34, Iss 2, Pp 233-253 (2002)

مصطلحات موضوعية: Japanese quail, microsatellite loci, chicken, guinea fowl, comparative genetic map, Animal culture, SF1-1100, Genetics, QH426-470

وصف الملف: electronic resource

Relation: http://www.gsejournal.org/content/34/2/233; https://doaj.org/toc/0999-193X; https://doaj.org/toc/1297-9686

URL الوصول: https://doaj.org/article/250b4767261d40668eba73655c18a376

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18

Academic Journal

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity.

المؤلفون: Chakraborty, Surajit, Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Cho, Chu-Young, Kim, Jae-Moo, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kwon, Hyuk-Min, Kim, Dae-Hyun, Kim, Tae-Woo

المصدر: Materials (1996-1944); Dec2022, Vol. 15 Issue 23, p8415, 14p

مصطلحات موضوعية: THERMAL resistance, MONOLITHIC microwave integrated circuits, THERMAL conductivity, GALLIUM nitride, MODULATION-doped field-effect transistors, MICROWAVE devices

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19

Conference

Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate

المؤلفون: Shiratori, Yuta, Hoshi, Takuya, Matsuzaki, Hideaki

المصدر: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

الاتاحة: http://dx.doi.org/10.1109/bcicts48439.2020.9392903
http://xplorestaging.ieee.org/ielx7/9392908/9392902/09392903.pdf?arnumber=9392903

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20

Academic Journal

Impact of selective thermal etching in mixed H 2 /NH 3 atmosphere on crystal quality of AlGaN/GaN heterostructures

المؤلفون: Yoshiya, Yuki, Hoshi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki

المصدر: Japanese Journal of Applied Physics ; volume 60, issue SB, page SBBK11 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/abdf72
https://iopscience.iop.org/article/10.35848/1347-4065/abdf72
https://iopscience.iop.org/article/10.35848/1347-4065/abdf72/pdf

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