المؤلفون: Hongfeng Wan (14341064), Weixuan Li (3814123), Xiaoqing Ma (3761947), Yanqi Mu (8889365), Guancai Xie (4636819), Mengshan Li (14341067), Beidou Guo (1949074), Jian Ru Gong (1511131)

مصطلحات موضوعية: Biophysics, Molecular Biology, Neuroscience, Physiology, Biotechnology, Cancer, Biological Sciences not elsewhere classified, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, induced barrier lowering, ideal subthreshold swing, generation electronic devices, extend moore ’, comsol multiphysics simulation, better gate control, 67 mv dec, 2 × 10, short channel effects, 2 , 2 , 5 , 378 v v, 2 cm, channel lengths, 5 nm, 5 cm, transistor downscaling, metal interconnection, lithography limit, highest value

Relation: https://figshare.com/articles/journal_contribution/3_nm_Channel_MoS_sub_2_sub_Transistors_by_Electromigration_of_Metal_Interconnection/21830855

الاتاحة: https://doi.org/10.1021/acsaelm.2c01306.s001