نتائج البحث - "Hirose Nobumitsu"

1

Academic Journal

Static characteristic evaluation of low-temperature deposition process for SiGeHEMT by Sputter Epitaxy Method / スパッタエピタキシー法によるSiGeHEMTの低温成膜プロセスの静特性評価

المؤلفون: Degura Kyouhei, Hirose Nobumitsu, Kasamatsu Akifumi, Katsumi Okubo, Matsui Toshiaki, Motohashi Akira, Suda Yoshiyuki, Tsukamoto Takahiro, Yosuke Aoyagi, 出蔵恭平, 塚本貴広, 大久保克己, 広瀬信光, 本橋叡, 松井敏明, 笠松章史, 青柳耀介, 須田良幸

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :3174

View record in JSTAGE

2

Academic Journal

Evaluation of low-temperature deposition process of SiGeHEMT by Sputter Epitaxy Method / スパッタエピタキシー法によるSiGeHEMTの低温成膜プロセスの評価

المؤلفون: Degura Kyouhei, Hirose Nobumitsu, Kasamatsu Akifumi, Katsumi Okubo, Matsui Toshiaki, Motohashi Akira, Suda Yoshiyuki, Tsukamoto Takahiro, 出蔵恭平, 塚本貴広, 大久保克己, 広瀬信光, 本橋叡, 松井敏明, 笠松章史, 須田良幸

المصدر: JSAP Annual Meetings Extended Abstracts. 2017, :3514

View record in JSTAGE

3

Academic Journal

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm2 fabricated by sputter epitaxy

المؤلفون: Suda, Yoshiyuki, Hirose, Nobumitsu, Tsukamoto, Takahiro, Wakiya, Minoru, Shinkawa, Ayaka, Kasamatsu, Akifumi, Matsui, Toshiaki

المساهمون: Japan Society for the Promotion of Science

المصدر: Applied Physics Letters ; volume 124, issue 9 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/5.0180934
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0180934/19696522/093502_1_5.0180934.pdf

View record in BASE

4

Academic Journal

Hole-tunneling Si0.82Ge0.18/Si triple-barrier resonant tunneling diodes with high peak current of 297 kA/cm² fabricated by sputter epitaxy.

المؤلفون: Suda, Yoshiyuki, Hirose, Nobumitsu, Tsukamoto, Takahiro, Wakiya, Minoru, Shinkawa, Ayaka, Kasamatsu, Akifumi, Matsui, Toshiaki

المصدر: Applied Physics Letters; 2/26/2024, Vol. 124 Issue 9, p1-6, 6p

مصطلحات موضوعية: RESONANT tunneling, TUNNEL diodes, EPITAXY, TUNNEL design & construction, SPACE charge, CURRENT-voltage characteristics

5

Academic Journal

Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method

المؤلفون: Tsukamoto, Takahiro, Ikeno, Kento, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المساهمون: Japan Society for the Promotion of Science, National Institute of Information and Communications Technology

المصدر: Journal of Crystal Growth ; volume 604, page 127045 ; ISSN 0022-0248

الاتاحة: http://dx.doi.org/10.1016/j.jcrysgro.2022.127045
https://api.elsevier.com/content/article/PII:S0022024822005279?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0022024822005279?httpAccept=text/plain

View record in BASE

6

Academic Journal

Direct Growth of Patterned Ge on Insulators Using Graphene

المؤلفون: Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المساهمون: Nippon Sheet Glass Foundation for Materials Science and Engineering

المصدر: The Journal of Physical Chemistry C ; volume 125, issue 25, page 14117-14121 ; ISSN 1932-7447 1932-7455

الاتاحة: http://dx.doi.org/10.1021/acs.jpcc.1c03567
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c03567

View record in BASE

7

Academic Journal

Hole-tunneling Si 0.82 Ge 0.18 /Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission

المؤلفون: Shinkawa, Ayaka, Wakiya, Minoru, Maeda, Yuki, Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المساهمون: Grant-in-Aid for Scientific Research

المصدر: Japanese Journal of Applied Physics ; volume 59, issue 8, page 080903 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.35848/1347-4065/aba379
https://iopscience.iop.org/article/10.35848/1347-4065/aba379
https://iopscience.iop.org/article/10.35848/1347-4065/aba379/pdf

View record in BASE

8

Patent

Semiconductor device and method for fabricating the same

View record in USPTO Patent Grants

9

Academic Journal

Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode

المؤلفون: Tsukamoto, Takahiro, Kurihara, Shota, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المساهمون: Ministry of Internal Affairs and Communications

المصدر: Electronic Materials Letters ; volume 16, issue 1, page 41-46 ; ISSN 1738-8090 2093-6788

الاتاحة: http://dx.doi.org/10.1007/s13391-019-00185-0
http://link.springer.com/content/pdf/10.1007/s13391-019-00185-0.pdf
http://link.springer.com/article/10.1007/s13391-019-00185-0/fulltext.html

View record in BASE

10

Academic Journal

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth

المؤلفون: Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المساهمون: Ministry of Internal Affairs and Communications

المصدر: Electronic Materials Letters ; volume 16, issue 1, page 9-13 ; ISSN 1738-8090 2093-6788

الاتاحة: http://dx.doi.org/10.1007/s13391-019-00179-y
http://link.springer.com/content/pdf/10.1007/s13391-019-00179-y.pdf
http://link.springer.com/article/10.1007/s13391-019-00179-y/fulltext.html

View record in BASE

11

Academic Journal

Hole-tunneling Si0.82Ge0.18/Si asymmetric-double-quantum-well resonant tunneling diode with high resonance current and suppressed thermionic emission.

المؤلفون: Shinkawa, Ayaka, Wakiya, Minoru, Maeda, Yuki, Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المصدر: Japanese Journal of Applied Physics; Aug2020, Vol. 59 Issue 8, p1-4, 4p

12

Conference

Effects of DC sputtering conditions on formation of Ge layers on Si substrates by sputter epitaxy method

المؤلفون: Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

المصدر: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) ; page 97-98

الاتاحة: http://dx.doi.org/10.1109/istdm.2014.6874675
http://xplorestaging.ieee.org/ielx7/6867647/6874620/06874675.pdf?arnumber=6874675

View record in BASE

13

Academic Journal

Increase in Current Density at Metal/GeO2/n-Ge Structure by Using Laminated Electrode.

المؤلفون: Tsukamoto, Takahiro, Kurihara, Shota, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المصدر: Electronic Materials Letters; Jan2020, Vol. 16 Issue 1, p41-46, 6p

14

Academic Journal

Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth.

المؤلفون: Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Matsui, Toshiaki, Suda, Yoshiyuki

المصدر: Electronic Materials Letters; Jan2020, Vol. 16 Issue 1, p9-13, 5p

15

Academic Journal

Control of surface flatness of Ge layers directly grown on Si (001) substrates by DC sputter epitaxy method

المؤلفون: Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

المساهمون: JSPS KAKENHI

المصدر: Thin Solid Films ; volume 592, page 34-38 ; ISSN 0040-6090

الاتاحة: http://dx.doi.org/10.1016/j.tsf.2015.08.044
https://api.elsevier.com/content/article/PII:S0040609015008172?httpAccept=text/plain
https://api.elsevier.com/content/article/PII:S0040609015008172?httpAccept=text/xml

View record in BASE

16

Academic Journal

Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

المؤلفون: Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

المساهمون: Japan Society for the Promotion of Science

المصدر: Applied Physics Letters ; volume 106, issue 5 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.4907863
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4907863/14464030/052103_1_online.pdf

View record in BASE

17

Academic Journal

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

المؤلفون: Tsukamoto, Takahiro, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

المصدر: Applied Physics Letters ; volume 103, issue 17 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.4826501
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4826501/14283945/172103_1_online.pdf

View record in BASE

18

Academic Journal

Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy

المؤلفون: Hanafusa, Hiroaki, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Suda, Yoshiyuki

المصدر: Japanese Journal of Applied Physics ; volume 51, issue 5R, page 055502 ; ISSN 0021-4922 1347-4065

الاتاحة: http://dx.doi.org/10.1143/jjap.51.055502
https://iopscience.iop.org/article/10.1143/JJAP.51.055502
https://iopscience.iop.org/article/10.1143/JJAP.51.055502/pdf

View record in BASE

19

Academic Journal

Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers

المؤلفون: Hanafusa, Hiroaki, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Chong, Harold M. H., Mizuta, Hiroshi, Suda, Yoshiyuki

المصدر: Applied Physics Express ; volume 4, issue 2, page 024102 ; ISSN 1882-0778 1882-0786

الاتاحة: http://dx.doi.org/10.1143/apex.4.024102
http://stacks.iop.org/1882-0786/4/i=2/a=024102/pdf

View record in BASE

20

Academic Journal

Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy

المؤلفون: Hanafusa, Hiroaki, Hirose, Nobumitsu, Kasamatsu, Akifumi, Mimura, Takashi, Matsui, Toshiaki, Chong, Harold M. H., Mizuta, Hiroshi, Suda, Yoshiyuki

المصدر: Applied Physics Express ; volume 4, issue 2, page 025701 ; ISSN 1882-0778 1882-0786

الاتاحة: http://dx.doi.org/10.1143/apex.4.025701
http://stacks.iop.org/1882-0786/4/i=2/a=025701/pdf

View record in BASE

تنقيح النتائج