المؤلفون: Oi, Nobutaka, Okubo, Satoshi, Tsuyuzaki, Ikuto, Hiraiwa, Atsushi, Kawarada, Hiroshi

المساهمون: Research Organization for Nano and Life Innovation, Waseda University, MEXT Project “Design and Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA).”

المصدر: IEEE Electron Device Letters ; volume 45, issue 9, page 1554-1557 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2024.3427423
http://xplorestaging.ieee.org/ielx8/55/10648890/10630699.pdf?arnumber=10630699

المؤلفون: Ota, Kosuke, Fu, Yu, Narita, Kento, Wakabayashi, Chiyuki, Hiraiwa, Atsushi, Fujishima, Tatsuya, Kawarada, Hiroshi

المصدر: Carbon ; volume 213, page 118099 ; ISSN 0008-6223

الاتاحة: http://dx.doi.org/10.1016/j.carbon.2023.118099
https://api.elsevier.com/content/article/PII:S0008622323003445?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S0008622323003445?httpAccept=text/plain

المؤلفون: Kudara, Ken, Arai, Masakazu, Suzuki, Yukiko, Morishita, Aoi, Tsunoda, Jun, Hiraiwa, Atsushi, Kawarada, Hiroshi

المصدر: Carbon ; volume 188, page 220-228 ; ISSN 0008-6223

الاتاحة: http://dx.doi.org/10.1016/j.carbon.2021.11.034
https://api.elsevier.com/content/article/PII:S000862232101112X?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S000862232101112X?httpAccept=text/plain

المؤلفون: Hiraiwa, Atsushi^1,2 (AUTHOR) qs4a-hriw@asahi-net.or.jp, Okubo, Satoshi³ (AUTHOR), Ogura, Masahiko⁴ (AUTHOR), Fu, Yu^3,5 (AUTHOR), Kawarada, Hiroshi^1,2,3 (AUTHOR)

المصدر: Journal of Applied Physics. 9/28/2022, Vol. 132 Issue 12, p1-19. 19p.

مصطلحات موضوعية: *WIDE gap semiconductors, *METAL insulator semiconductors, *DOPING agents (Chemistry), *CAPACITORS, *DEBYE length, *DIAMOND crystals, *DIAMONDS, *METAL oxide semiconductor capacitors

المؤلفون: Hiraiwa, Atsushi, Horikawa, Kiyotaka, Kawarada, Hiroshi, Kado, Motohisa, Danno, Katsunori

المصدر: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2024, Vol. 42 Issue 1, p1-11, 11p

مصطلحات موضوعية: ELECTRON field emission, CAPACITORS, ALUMINUM oxide, FIELD emission, INDIUM gallium zinc oxide, ACTIVATION energy

المؤلفون: Okubo, Satoshi, Matsumura, Daisuke, Kawarada, Hiroshi, Hiraiwa, Atsushi

المصدر: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2024, Vol. 42 Issue 1, p1-11, 11p

مصطلحات موضوعية: DIAMOND surfaces, SURFACES (Technology), CAPACITORS, FIELD emission, DIAMONDS, METAL insulator semiconductors

المؤلفون: Aoi Morishita, Atsushi Hiraiwa, Fei Wenxi, Hiraiwa Atsushi, Hiroshi Kawarada, Iwataki Masayuki, Kawarada Hiroshi, Masayuki Iwataki, Morishita Aoi, Te Bi, Wenxi Fei, 畢 特

المصدر: JSAP Annual Meetings Extended Abstracts. 2020, :1923

المؤلفون: Hiraiwa, Atsushi^1,2 (AUTHOR) qs4a-hriw@asahi-net.or.jp, Horikawa, Kiyotaka³ (AUTHOR), Kawarada, Hiroshi^1,3,4 (AUTHOR)

المصدر: Journal of Applied Physics. 5/21/2021, Vol. 129 Issue 19, p1-12. 12p.

مصطلحات موضوعية: *GALLIUM nitride, *TRANSMISSION electron microscopes, *DIELECTRIC breakdown, *LATTICE constants, *CONDUCTION bands, *SPACE charge, *FIELD emission

المؤلفون: Fu, Yu, Chang, Yuhao, Zhu, Xiaohua, Hiraiwa, Atsushi, Xu, Ruimin, Xu, Yuehang, Kawarada, Hiroshi

المساهمون: China Scholarship Council, National Natural Science Foundation of China

المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ; page 121-124

الاتاحة: http://dx.doi.org/10.1109/ispsd49238.2022.9813655
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813655.pdf?arnumber=9813655

المؤلفون: Oi, Nobutaka, Inaba, Masafumi, Okubo, Satoshi, Tsuyuzaki, Ikuto, Kageura, Taisuke, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi

المساهمون: Japan Society for the Promotion of Science

المصدر: Scientific Reports ; volume 8, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/s41598-018-28837-5
https://www.nature.com/articles/s41598-018-28837-5.pdf
https://www.nature.com/articles/s41598-018-28837-5

المؤلفون: Kawarada, Hiroshi, Yamada, Tetsuya, Xu, Dechen, Tsuboi, Hidetoshi, Kitabayashi, Yuya, Matsumura, Daisuke, Shibata, Masanobu, Kudo, Takuya, Inaba, Masafumi, Hiraiwa, Atsushi

المصدر: Scientific Reports ; volume 7, issue 1 ; ISSN 2045-2322

الاتاحة: http://dx.doi.org/10.1038/srep42368
https://www.nature.com/articles/srep42368
https://www.nature.com/articles/srep42368.pdf

المؤلفون: Kitabayashi, Yuya, Kudo, Takuya, Tsuboi, Hidetoshi, Yamada, Tetsuya, Xu, Dechen, Shibata, Masanobu, Matsumura, Daisuke, Hayashi, Yuya, Syamsul, Mohd, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi

المساهمون: Grant-in-Aid for Fundamental Research S, JSPS, Advanced Low Carbon Technology Research and Development of Japan Science and Technology Agency

المصدر: IEEE Electron Device Letters ; volume 38, issue 3, page 363-366 ; ISSN 0741-3106 1558-0563

الاتاحة: https://doi.org/10.1109/led.2017.2661340
http://xplorestaging.ieee.org/ielx7/55/7862302/07837668.pdf?arnumber=7837668

المؤلفون: Hiraiwa, Atsushi^1,2 (AUTHOR), Horikawa, Kiyotaka³ (AUTHOR), Kawarada, Hiroshi^1,3,4 (AUTHOR)

المصدر: Journal of Applied Physics. 2/14/2020, Vol. 127 Issue 6, p1-17. 17p. 3 Diagrams, 1 Chart, 12 Graphs.

مصطلحات موضوعية: *CAPACITORS, *WIDE gap semiconductors, *FIELD emission, *METAL oxide semiconductor field-effect transistors, *SPACE charge, *FIELD-effect transistors, *ELECTRON affinity, *ELECTRIC potential measurement

المؤلفون: Okubo, Satoshi, Horikawa, Kiyotaka, Kawarada, Hiroshi, Hiraiwa, Atsushi

المصدر: Journal of Applied Physics; 7/28/2019, Vol. 126 Issue 4, pN.PAG-N.PAG, 10p, 1 Color Photograph, 1 Diagram, 1 Chart, 9 Graphs

مصطلحات موضوعية: METAL oxide semiconductor capacitors, TRANSITION metals, ELECTRON field emission, CAPACITORS, ELECTRON affinity, FIELD emission, FIELD-effect transistors

المؤلفون: Hiraiwa, Atsushi^1,2 hiraiwa@aoni.waseda.jp, Okubo, Satoshi³, Horikawa, Kiyotaka³, Kawarada, Hiroshi^2,3,4

المصدر: Journal of Applied Physics. 2019, Vol. 125 Issue 17, pN.PAG-N.PAG. 10p. 2 Diagrams, 10 Graphs.

مصطلحات موضوعية: *SEMICONDUCTORS, *BAND gaps, *ELECTRIC insulators & insulation, *PHOTOCAPACITANCE, *ELECTRIC capacity

المؤلفون: Fu, Yu, Chang, Yuhao, Kono, Shozo, Hiraiwa, Atsushi, Kanehisa, Kyotaro, Zhu, Xiaohua, Xu, Ruimin, Xu, Yuehang, Kawarada, Hiroshi

المساهمون: Scholarship from China Scholarship Council, National Natural Science Foundation of China

المصدر: IEEE Transactions on Electron Devices ; volume 69, issue 5, page 2236-2242 ; ISSN 0018-9383 1557-9646

الاتاحة: http://dx.doi.org/10.1109/ted.2022.3157655
http://xplorestaging.ieee.org/ielx7/16/9761777/09740486.pdf?arnumber=9740486

المؤلفون: Tsunoda, Jun, Niikura, Naoya, Ota, Kosuke, Morishita, Aoi, Hiraiwa, Atsushi, Kawarada, Hiroshi

المصدر: IEEE Electron Device Letters ; volume 43, issue 1, page 88-91 ; ISSN 0741-3106 1558-0563

الاتاحة: http://dx.doi.org/10.1109/led.2021.3131038
http://xplorestaging.ieee.org/ielx7/55/9664971/09627671.pdf?arnumber=9627671

المؤلفون: Nameki, Yuta, Bi, Te, Tsunoda, Jun, Niikura, Naoya, Arai, Masakazu, Takahashi, Yasuhiro, Ota, Kousuke, Hiraiwa, Atsushi, Kawarada, Hiroshi

المصدر: SSRN Electronic Journal ; ISSN 1556-5068

الاتاحة: http://dx.doi.org/10.2139/ssrn.4020068

المؤلفون: Aoi Yamamoto, Bi Te, Hiraiwa Atsushi, Inaba Masafumi, Kawarada Hiroshi, Kudo Takuya, Niu Junxiong, Oi Nobutaka, Okubo Satoshi, Sasaki Toshio, 佐々木 敏夫, 大久保 智, 大井 信敬, 山本 あおい, 川原田 洋, 工藤 拓也, 平岩 篤, 牛 俊雄, 畢 特, 稲葉 優文

المصدر: JSAP Annual Meetings Extended Abstracts. 2018, :1460

المؤلفون: Oi, Nobutaka, Kudo, Takuya, Inaba, Masafumi, Okubo, Satoshi, Onoda, Shinobu, Hiraiwa, Atsushi, Kawarada, Hiroshi, Shinobu, Onoda

المصدر: IEEE Electron Device Letters. 40(6):933-936

URL الوصول: https://explore.openaire.eu/search/publication?articleId=jairo_______::c323049ff6bb7589d0887980c4f498c8
https://repo.qst.go.jp/records/77674