نتائج البحث - "Hengehold, Robert L."

1

Academic Journal

Reversible Mn Segregation at the Polar Surface of Lithium Tetraborate

المؤلفون: Dugan, Christina L., Hengehold, Robert L., McHale, Stephen R., Colon Santana, Juan A., McClory, John W., Adamiv, Volodymyr T., Burak, Yaroslav V., Losovyj, Ya B., Dowben, Peter A.

المصدر: Faculty Publications

مصطلحات موضوعية: Ultra-high vacuum, Materials treatment, Monochromators, Electron paramagnetic resonance spectroscopy, Electromagnetics and Photonics, Engineering Physics, Semiconductor and Optical Materials

وصف الملف: application/pdf

Relation: https://scholar.afit.edu/facpub/89; https://scholar.afit.edu/context/facpub/article/1102/viewcontent/dugan_rever.pdf

الاتاحة: https://scholar.afit.edu/facpub/89
https://doi.org/10.1063/1.4802760
https://scholar.afit.edu/context/facpub/article/1102/viewcontent/dugan_rever.pdf

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2

Academic Journal

Magnetic Properties of Transition Metal-Implanted Zno Nanotips Grown On Sapphire and Quartz

المؤلفون: Raley, Jeremy A., Yeo, Yung-Kee, Hengehold, Robert L., Ryu, Mee-Yi, Wu, Pan

المصدر: Faculty Publications

مصطلحات موضوعية: ZnO nanotip, Ferromagnetism, Ion implantation, Superconducting quantum interference device (SQUID), Nanotechnology Fabrication

Relation: https://scholar.afit.edu/facpub/515; http://society.kisti.re.kr/sv/SV_svpsbs03V.do?method=download&cn1=JAKO200815750725574

الاتاحة: https://scholar.afit.edu/facpub/515
https://doi.org/10.4283/JMAG.2008.13.1.019
http://society.kisti.re.kr/sv/SV_svpsbs03V.do?method=download&cn1=JAKO200815750725574

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3

Academic Journal

Control of Surface States in GaSb/Al(x)Ga(l-x)As(y)Sb(l-y)/Ga(x)In(l-x)Sb/Al(x)Ga(l-x)As(y)Sb(1-y) Quantum Well Structures

المؤلفون: Johnstone, D. K., Yeo, Yung Kee, Hengehold, Robert L., Turner, G. W.

المصدر: Faculty Publications

مصطلحات موضوعية: Etching, Quantum wells, Laser materials

Relation: https://scholar.afit.edu/facpub/1275

الاتاحة: https://scholar.afit.edu/facpub/1275
https://doi.org/10.1063/1.125147;

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4

Academic Journal

Actinide-activated luminescence in uranium-implanted III-V semiconductors.

المؤلفون: Pomrenke, Gernot S., Hengehold, Robert L., Yeo, Yung Kee, Brown, Ian G., Solomon, James S.

المصدر: Journal of Applied Physics. 2/15/1990, Vol. 67 Issue 4, p2040. 4p.

مصطلحات موضوعية: *LUMINESCENCE, *SEMICONDUCTORS, *URANIUM, *ION implantation, *MASS spectrometry

5

Academic Journal

Photoluminescence from Mg-implanted, epitaxial, and semi-insulating InP.

المؤلفون: Pomrenke, Gernot S., Park, Y. S., Hengehold, Robert L.

المصدر: Journal of Applied Physics; Feb1981, Vol. 52 Issue 2, p969-977, 9p

6

Academic Journal

Pr3+ luminescence in GaAs and AlxGa1-xAs implanted with Pr.

المؤلفون: Thee, Paul L., Yeo, Yung Kee, Hengehold, Robert L., Pomrenke, Gernot S.

المصدر: Journal of Applied Physics; 10/1/1995, Vol. 78 Issue 7, p4651, 8p

مصطلحات موضوعية: PRASEODYMIUM, GALLIUM arsenide, PHOTOLUMINESCENCE, ELECTRONIC excitation, ERBIUM

7

Academic Journal

Luminescence study of thallium implanted silicon.

المؤلفون: Swenson, Orven F., Luke, Theodore E., Hengehold, Robert L.

المصدر: Journal of Applied Physics; Nov1983, Vol. 54 Issue 11, p6329-6335, 7p

8

Academic Journal

Reversible Mn segregation at the polar surface of lithium tetraborate

المؤلفون: Dugan, Christina, Hengehold, Robert L, McHale, Steve R, Colon Santana, Juan A, McClory, John W, Adamiv, V T, Burak, Ya V, Losovyj, Yaroslav B., Dowben, Peter A.

المصدر: Peter Dowben Publications

مصطلحات موضوعية: Physical Sciences and Mathematics, Physics

وصف الملف: application/pdf

Relation: https://digitalcommons.unl.edu/physicsdowben/256; https://digitalcommons.unl.edu/context/physicsdowben/article/1255/viewcontent/Dowben_APL_2013_Reversible_Mn_segregation.pdf

الاتاحة: https://digitalcommons.unl.edu/physicsdowben/256
https://digitalcommons.unl.edu/context/physicsdowben/article/1255/viewcontent/Dowben_APL_2013_Reversible_Mn_segregation.pdf

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9

Academic Journal

Photoemission and Cathodoluminescence of Doped Lithium Tetraborate Crystals Being Developed for Neutron Detection

المؤلفون: Dugan, Christina L., Hengehold, Robert L., McHale, Stephen R., Losovyj, Yaroslav, McClory, John W., Petrosky, James C.

المصدر: MRS Proceedings ; volume 1341 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/opl.2011.1109
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427411011092

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10

Academic Journal

Implantation damage recovery and carrier activation studies of Si‐implanted Al 0.18 Ga 0.82 N by temperature dependent Hall‐effect measurements

المؤلفون: Ryu, Mee‐Yi, Yeo, Y. K., Hengehold, Robert L.

المصدر: physica status solidi c ; volume 4, issue 7, page 2613-2616 ; ISSN 1862-6351 1610-1642

الاتاحة: http://dx.doi.org/10.1002/pssc.200674760
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssc.200674760
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200674760

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11

Academic Journal

Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation

المؤلفون: Hogsed, Michael R., Yeo, Yung Kee, Ahoujja, Mo, Ryu, Mee-Yi, Petrosky, James C., Hengehold, Robert L.

المصدر: Applied Physics Letters ; volume 86, issue 26 ; ISSN 0003-6951 1077-3118

الاتاحة: http://dx.doi.org/10.1063/1.1977185
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.1977185/13183296/261906_1_online.pdf

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12

Academic Journal

Electrical and Optical Properties of 1 MeV-electron irradiated Al x Ga 1-x N

المؤلفون: Hogsed, Michael R., Ahoujja, Mo, Ryu, Mee-Yi, Yeo, Yung Kee, Petrosky, James C., Hengehold, Robert L.

المصدر: MRS Proceedings ; volume 831 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-831-e11.35
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400073334

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13

Academic Journal

Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

المؤلفون: Johnstone, Daniel K., Ahoujja, Mohamed, Yeo, Yung-Kee, Hengehold, Robert L., Guido, Louis

المساهمون: AIR FORCE OFFICE OF SCIENTIFIC RESEARCH ARLINGTON VA

المصدر: DTIC AND NTIS

مصطلحات موضوعية: Properties of Metals and Alloys, Solid State Physics, GALLIUM NITRIDES, THIN FILMS, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, SUBSTRATES, TRAPPING(CHARGED PARTICLES), SAPPHIRE, ELECTRON EMISSION, CRYSTAL DEFECTS, CAPACITANCE, COMPONENT REPORT, MOCVD(METAL ORGANIC CHEMICAL VAPOR DEPOSITION), ICTS(ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY), IVT(CURRENT VOLTAGE TEMPERATURE)

وصف الملف: text/html

Relation: http://www.dtic.mil/docs/citations/ADP012594

الاتاحة: http://www.dtic.mil/docs/citations/ADP012594
http://oai.dtic.mil/oai/oai?&verb=getRecord&metadataPrefix=html&identifier=ADP012594

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14

Academic Journal

Electrical and Optical Studies of Si-Implanted GaN

المؤلفون: Fellows, James A., Yeo, Yung Kee, Hengehold, Robert L., Krasnobaev, Leonid

المصدر: MRS Proceedings ; volume 693 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-693-i6.38.1
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400644573

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15

Academic Journal

Optical Characterization of Mg- and Si-Implanted GaN

المؤلفون: Fellows, James A., Yeo, Yung Kee, Hengehold, Robert L., Krasnobaev, Leonid

المصدر: MRS Proceedings ; volume 680 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-680-e7.1
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400629585

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16

Academic Journal

Optical activation of ion implanted and annealed GaN

المؤلفون: Silkowski, Eric, Pomrenke, Gernot S, Yeo, Yung Kee, Hengehold, Robert L

المصدر: Physica Scripta ; volume T69, page 276-280 ; ISSN 0031-8949 1402-4896

الاتاحة: http://dx.doi.org/10.1088/0031-8949/1997/t69/058
http://stacks.iop.org/1402-4896/1997/i=T69/a=058/pdf

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17

Academic Journal

Pr3+ luminescence in GaAs and Alx Ga1−x As implanted with Pr

المؤلفون: Thee, Paul L., Yeo, Yung Kee, Hengehold, Robert L., Pomrenke, Gernot S.

المصدر: Journal of Applied Physics ; volume 78, issue 7, page 4651-4658 ; ISSN 0021-8979 1089-7550

الاتاحة: http://dx.doi.org/10.1063/1.359812
https://pubs.aip.org/aip/jap/article-pdf/78/7/4651/18678408/4651_1_online.pdf

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18

Academic Journal

Luminescence Study of The INTRA-4f Emissions from GaAs:(Er+O) and Al x Gal 1−x As:(Er+O)

المؤلفون: Colon, Jose E., Elsaesser, David W., Yeo, Yung Kee, Hengehold, Robert L., Pomrenke, Gernot S.

المصدر: MRS Proceedings ; volume 301 ; ISSN 0272-9172 1946-4274

الاتاحة: http://dx.doi.org/10.1557/proc-301-169
https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400389631

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19

Electronic Resource

Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

المؤلفون: AIR FORCE OFFICE OF SCIENTIFIC RESEARCH ARLINGTON VA, Johnstone, Daniel K., Ahoujja, Mohamed, Yeo, Yung-Kee, Hengehold, Robert L., Guido, Louis

المصدر: DTIC AND NTIS

مصطلحات الفهرس: Properties of Metals and Alloys, Solid State Physics, GALLIUM NITRIDES, THIN FILMS, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, SUBSTRATES, TRAPPING(CHARGED PARTICLES), SAPPHIRE, ELECTRON EMISSION, CRYSTAL DEFECTS, CAPACITANCE., COMPONENT REPORT, MOCVD(METAL ORGANIC CHEMICAL VAPOR DEPOSITION), ICTS(ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY), IVT(CURRENT VOLTAGE TEMPERATURE), Text

URL: https://apps.dtic.mil/docs/citations/ADP012594

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20

Conference

Electrical and Optical Properties of 1 MeV-electron irradiated AlxGa1-xN.

المؤلفون: Hogsed, Michael R., Ahoujja, Mo, Ryu, Mee-Yi, Yeo, Yung Kee, Petrosky, James C., Hengehold, Robert L.

المصدر: MRS Online Proceedings Library; 2004, Vol. 831 Issue 1, p188-193, 6p

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